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| P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPTEMBER 94 FEATURES * 240 Volt VDS * RDS(on)=9 * Low threshold APPLICATIONS * Electronic Hook Switch ZVP4424A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg -240 -200 -1 40 E-Line TO92 Compatible VALUE UNIT V mA A V mW C 750 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-State Resistance Forward Transconductance (1) (2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 125 100 18 5 8 8 26 20 200 25 15 15 15 40 30 -0.75 -1.0 7.1 8.8 9 11 -240 -0.7 -1.4 -2.0 100 -10 -100 TYP MAX. UNIT V V nA A A CONDITIONS. ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 40V, VDS=0V VDS=-240 V, VGS=0 VDS=-190V, VGS=0V, T=125C VDS=-10 V, VGS=-10V VGS=-10V,ID=-200mA VGS=-3.5V,ID=-100mA VDS=-10V,ID=-0.2A A mS pF pF pF ns ns ns ns VDS=-25V, VGS=0V, f=1MHz VDD -50V, ID =-0.25A, VGEN=-10V (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3-436 ZVP4424A TYPICAL CHARACTERISTICS -1.2 300s Pulsed Test VGS=-10V -5V -4V -1.2 ID - Drain Current (Amps) ID - Drain Current (Amps) -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -1.0 -0.8 -0.6 -0.4 -0.2 0 VDS=-10V 300s Pulsed Test -3V -2.5V -2V -10 0 -2 -4 -6 -8 -10 VDS - Drain Source Voltage (Volts) VGS - Gate Source Voltage (Volts) Saturation Characteristics 400 400 Transfer Characteristics gfs-Transconductance (mS) gfs-Transconductance (mS) 300 300 200 300s Pulsed Test VDS=-10V 100 200 300s Pulsed Test VDS=-10V 100 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 -2 -4 -6 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current RDS(on)-Drain Source On Resistance () Transconductance v gate-source voltage 100 VGS=-2V -2.5V 2.4 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 VGS=-10V ID=0.2A -3V -10V 10 s Re rce ou -S ain Dr Gate T h Voltag reshold e VGS(T H) R ce an ist ) (on DS 300s Pulsed Test VGS=VDS ID=-1mA 1 -0.01 -0.1 -1 -10 100 125 150 ID-Drain Current (Amps) Junction Temperature (C) On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature 3-437 ZVP4424A TYPICAL CHARACTERISTICS Note:VGS=0V 300 250 200 150 100 50 0 -0.01 -1 Crss -10 -100 Ciss 0 -2 -4 -6 -8 -10 -12 -14 Note:ID=- 0.25A -16 0 1 2 3 4 5 VDS= -20V -50V -100V Coss VDS-Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) C-Capacitance (pF) Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 0.8 D=1 (D.C.) Thermal Resistance (C/W) Ptot-Power Dissipation (mW) 150 0.6 100 D=0.5 0.4 50 D=0.2 D=0.1 D=0.05 Single Pulse 0.2 0 0.0001 0 0.1 1 10 100 0.001 0.01 0 50 100 150 Pulse Width (seconds) Tamb - Ambient Temperature (C) Maximum transient thermal impedance Derating Curve 3-438 |
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