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| SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - OCTOBER 1995 FEATURES * 240 Volt VDS * RDS(on)= 8.8 typical at VGS=-3.5V * Low threshold and Fast switching APPLICATIONS * Electronic hook switches * Telecoms and Battery powered equipment COMPLEMENTARY TYPE PARTMARKING DETAIL ZVN4424G ZVP4424 ZVP4424G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -240 -480 -1.0 40 UNIT V mA A V W C 2.5 -55 to +150 3 - 438 ZVP4424G ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-State Resistance Forward Transconductance (1) (2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 125 100 18 5 8 8 26 20 200 25 15 15 15 40 30 -0.75 -1.0 7.1 8.8 9 11 -240 -0.7 -1.4 -2.0 100 -10 -100 TYP MAX. UNIT V V nA A A CONDITIONS. ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 40V, VDS=0V VDS=-240V, VGS=0V VDS=-190V, VGS=0V, T=125C VDS=-10V, VGS=-10V VGS=-10V, ID=-200mA VGS=-3.5V, ID=-100mA VDS=-10V,ID=-0.2A A mS pF pF pF ns ns ns ns VDS=-25V, VGS=0V, f=1MHz VDD -50V, ID =-0.25A, VGEN=-10V (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device TYPICAL CHARACTERISTICS -Gate Source Voltage (Volts) 300 Note:VGS=0V 0 -2 -4 -6 -8 -10 -12 -14 -16 0 C-Capacitance (pF) 250 200 150 Ciss 100 Coss VDS= -20V -50V -100V Note:ID=- 0.25A 1 2 3 4 5 50 0 -0.01 -1 Crss -10 -100 5 VDS-Drain Source Voltage (Volts) V/ Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 439 ZVP4424G TYPICAL CHARACTERISTICS -1.2 I - Drain Current (Amps) I - Drain Current (Amps) -1.0 300s Pulsed T est VGS=-10V -5V -4V -1.2 -1.0 -0.8 -0.8 -0.6 -0.6 -0.4 -3V -2.5V -2V -0.4 VDS=-10V 300s Pulsed T est -0.2 -0.2 0 0 -2 -4 -6 -8 -10 0 0 -2 -4 -6 -8 -10 VDS - Drain Source Voltage (Volts) VGS - Gate Source Voltage (Volts) Saturation Characteristics 400 400 Transfer Characteristics gB -Transconductance (mS) gB -Transconductance (mS) 300 300 200 300s Pulsed T est VDS=-10V 200 300s Pulsed T est VDS=-10V 100 100 I I 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 -2 -4 -6 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage RDS(on)-Drain Source On Resistance 100 VGS=-2V -2.5V -3V 2.4 2.2 2.0 VGS=-10V ID=0.2A and V Normalised R 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 -10V 10 300s Pulsed T est 1 VGS=VDS ID=-1mA -0.01 -0.1 -1 -10 ID-Drain Current (Amps) Junction Temperature (C) On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature 3 - 440 |
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