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| PD - 9.1606A PRELIMINARY l l l l l IRF7319 HEXFET(R) Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 N-Ch V DSS 30V P-Ch -30V 2 7 3 6 4 5 P -C H A N N E L M O S FE T RDS(on) 0.029 0.058 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Top View S O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 82 4.0 0.20 5.0 -5.0 -55 to + 150 C N-Channel 30 6.5 5.2 30 2.5 2.0 1.3 140 -2.8 Maximum P-Channel -30 20 -4.9 -3.9 -30 -2.5 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range A W mJ A mJ V/ ns Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 62.5 Units C/W 9/15/97 IRF7319 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 -- -- -- -- -- -- 1.0 -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. -- -- -- -- 0.022 -- 0.022 -- 0.023 0.029 0.032 0.046 0.042 0.058 0.076 0.098 -- -- -- -- 14 -- 7.7 -- -- 1.0 -- -1.0 -- 25 -- -25 -- 100 22 33 23 34 2.6 3.9 3.8 5.7 6.4 9.6 5.9 8.9 8.1 12 13 19 8.9 13 13 20 26 39 34 51 17 26 32 48 650 -- 710 -- 320 -- 380 -- 130 -- 180 -- Units V V/C Conditions VGS = 0V, I D = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 5.8A VDS = -15V, ID = -4.9A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 55C VDS = -24V, VGS = 0V, TJ = 55C VGS = 20V N-Channel ID = 5.8A, VDS = 15V, VGS = 10V nC P-Channel ID = -4.9A, VDS = -15V, VGS = -10V N-Channel VDD = 15V, ID = 1.0A, RG = 6.0, RD = 15 ns P-Channel VDD = -15V, I D = -1.0A, RG = 6.0, RD = 15 N-Channel V GS = 0V, VDS = 25V, = 1.0MHz pF P-Channel V GS = 0V, VDS = -25V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V S IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance A nA Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 2.5 -- -- -2.5 A -- -- 30 -- -- -30 -- 0.78 1.0 T J = 25C, IS = 1.7A, VGS = 0V V -- -0.78 -1.0 TJ = 25C, IS = -1.7A, VGS = 0V -- 45 68 N-Channel ns -- 44 66 T J = 25C, IF =1.7A, di/dt = 100A/s -- 58 87 P-Channel nC -- 42 63 T J = 25C, IF = -1.7A, di/dt = 100A/s Repetitive rating; pulse width limited by Notes: Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 22 ) Surface mounted on FR-4 board, t 10sec. N-Channel ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -2.8A, di/dt 150A/s, VDD V (BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 10mH RG = 25, IAS = 4.0A. (See Figure 12) P-Channel Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.8A. N-Channel IRF7319 TOP VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V 100 TOP I D , Drain-to-Source Current (A) 10 I D, Drain-to-Source Current (A) BOTTOM VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V 100 BOTTOM 10 3.0V 3.0V 1 0.1 1 20s PULSE WIDTH TJ = 25C 10 A 1 0.1 1 20s PULSE WIDTH TJ = 150C 10 A V DS , Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25C T J = 150C 10 I S D , Reverse Drain Current (A) TJ = 150C 10 TJ = 25C 1 3.0 3.5 4.0 V D S = 10V 20s PULSE WIDTH 4.5 5.0 A 1 0.4 0.6 0.8 1.0 1.2 VG S = 0V 1.4 A 1.6 V G S , Gate-to-Source Voltage (V) V S D , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF7319 2.0 N-Channel ID = 5.8A R DS(on) , Drain-to-Source On Resistance (Normalized) RDS (on) , Drain-to-Source On Resistance () 0.040 0.036 V G S = 4.5V 1.5 0.032 1.0 0.028 0.5 0.024 V G S = 10V 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.020 0 10 20 30 40 A TJ , Junction Temperature ( C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS (on) , Drain-to-Source On Resistance () 0.12 200 TOP E A S , Single Pulse Avalanche Energy (mJ) 0.10 160 BOTTOM I ID 1.8A 3.2A 4.0A 0.08 120 0.06 I D = 5.8A 0.04 80 40 0.02 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 A 150 V G S , Gate-to-Source Voltage (V) Starting T ,JJunction Temperature (C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current N-Channel 20 IRF7319 ID = 5.8A VDS = 15V 1200 VGS , Gate-to-Source Voltage (V) A V GS C is s C rs s C os s = = = = 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd 16 C , C a p a c ita n c e (p F ) 900 C is s C os s 12 600 8 300 C rss 4 0 1 10 100 0 0 10 20 30 40 V D S , Drain-to-Source V oltage (V) Q G, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7319 100 TOP BOTTOM VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V P-Channel 100 TOP BOTTOM - -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V 10 10 -3.0V -3.0V 1 0.1 1 20s PULSE WIDTH TJ = 25C 10 A 1 0.1 1 20s PULSE WIDTH TJ = 150C 10 A -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) T J = 25C TJ = 150C 10 -I S D , Reverse Drain Current (A) TJ = 150C 10 TJ = 25C 1 3.0 3.5 4.0 4.5 V D S = -10V 20s PULSE WIDTH 5.0 5.5 6.0 A 1 0.4 0.6 0.8 1.0 V G S = 0V 1.2 A 1.4 -VG S , Gate-to-Source Voltage (V) -VS D , Source-to-Drain Voltage (V) Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode Forward Voltage P-Channel IRF7319 0.6 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D = 4.9A RDS(on) , Drain-to-Source On Resistance ( ) 0.5 1.5 0.4 1.0 0.3 0.2 V G S = -4.5V 0.5 0.1 V G S = -10V 0.0 0 10 20 30 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 A TJ , Junction Temperature ( C) -ID , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to-Source On Resistance ( ) 0.16 300 EAS , Single Pulse Avalanche Energy (mJ) 250 ID -1.3A -2.2A BOTTOM -2.8A TOP 0.12 200 0.08 I D = -4.9A 150 100 0.04 50 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 150 -VGS , Gate -to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 18. Typical On-Resistance Vs. Gate Voltage Fig 19. Maximum Avalanche Energy Vs. Drain Current IRF7319 1400 VGS = 0V f = 1 MHz Ciss = Cgs + Cgd + Cds Crss = Cgd Coss = Cds + Cgd P-Channel 20 SHORTED ID = -4.9A VDS =-15V -V GS , Gate-to-Source Voltage (V) A 1200 16 1000 C, Capacitance (pF) C iss C oss 800 12 600 8 400 C rss 4 200 0 1 10 100 0 0 10 20 30 40 - V D S , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7319 Package Outline SO8 Outline INCHES D -B- MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 DIM 5 MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 0.10 (.004) 6 -CB 8X 0.25 (.010) A1 M CASBS L 8X C 8X RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6 MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X Part Marking Information SO8 E X A M P LE : TH IS IS A N IR F 7 101 D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X W AFER LO T C O D E (LA S T 4 D IG IT S ) 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O F 7 101 T OP PART NUMBER B O T TO M IRF7319 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T ER M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E ED D IR E C T IO N N O TE S: 1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R. 2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ). 3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 . 33 0. 00 (12 .99 2) M A X. 1 4. 40 ( .5 66 ) 1 2. 40 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/97 |
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