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| SI4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested ID (A) 10 8 rDS(on) (W) 0.0135 @ VGS = 10 V 0.020 @ VGS = 4.5 V APPLICATIONS D Battery Switch D SO-8 S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G Ordering Information: SI4410BDY SI4410BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 10 8 50 2.3 2.5 1.6 Steady State Unit V 7.5 6 A 1.26 1.4 0.9 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72211 S-31990--Rev. B, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 25 Maximum 50 90 30 Unit _C/W C/W 1 SI4410BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 2.3 A, VGS = 0 V 20 0.011 0.0165 25 0.76 1.1 0.0135 0.020 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgt Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 25 V, RL = 25 W ID ^ 1 A, VGEN = 10 V, RG = 6 W f = 1 MHz 0.5 VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 5 V, ID = 10 A 13 25 5.5 3.7 1.6 10 10 40 15 35 2.7 15 15 60 25 70 ns W 20 40 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 50 Transfer Characteristics 30 4V 20 30 20 TC = 125_C 10 25_C -55_C 0 10 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3V 3.0 3.5 4.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72211 S-31990--Rev. B, 13-Oct-03 2 SI4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.030 0.025 0.020 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 C - Capacitance (pF) On-Resistance vs. Drain Current 2000 Capacitance r DS(on) - On-Resistance ( W ) 1600 Ciss VGS = 4.5 V 1200 800 Coss Crss 400 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 10 A Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A 6 r DS(on) - On-Resistance ( W) (Normalized) 8 1.6 1.2 4 0.8 2 0.4 0 0 5 10 15 20 25 0.0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.10 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 ID = 10 A I S - Source Current (A) 0.06 TJ = 25_C 0.04 0.02 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 72211 S-31990--Rev. B, 13-Oct-03 0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 SI4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) Power (W) -0.0 -0.2 -0.4 -0.6 10 -0.8 -1.0 -50 0 10 - 2 ID = 250 mA 50 Single Pulse Power 40 30 TA = 25_C 20 -25 0 25 50 75 100 125 150 10 - 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Limited by rDS(on) 10 Safe Operating Area, Junction-to-Case 100 ms, 10 ms 1 ms 1 10 ms 100 ms 1s 0.1 TA = 25_C Single Pulse 10 s dc, 100 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72211 S-31990--Rev. B, 13-Oct-03 SI4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72211 S-31990--Rev. B, 13-Oct-03 www.vishay.com 5 |
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