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SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2677
(FP10W90HVX2)
900V 10A
FEATURES
Input capacitance (Ciss) is small.
OUTLINE DIMENSIONS
Case : ITO-3P (Unit : mm)
Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION
Switching power supply of AC 240V input High voltage power supply Inverter
RATINGS
Absolute Maximum Ratings Tc = 25 Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentDC ID IDP Continuous Drain CurrentPeak) IS Continuous Source CurrentDC PT Total Power Dissipation IAR Repetitive Avalanche Current Single Avalanche Energy EAS Repetitive Avalanche Energy EAR Vdis Dielectric Strength TOR Mounting Torque Conditions Ratings -55150 150 900 30 10 20 10 65 10 260 26 2 0.8 Unit V
Pulse width10s, Duty cycle1/100
A W A mJ kV Nm
Tch = 150 Tch = 25 Tch = 25 Terminals to case,AC 1 minute Recommended torque 0.5 Nm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff
2SK2677 ( FP10W90HVX2 )
Conditions Min. 900 Typ. Max. 250 0.1 4.8 2.5 8.0 1.05 3.0 Unit V A S V
ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 10A VDS = 25V, VGS = 0V, f = 1MHZ ID = 5A, RL = 30, VGS = 10V
90 2150 50 210 140 440
1.4 3.5 1.5 1.92 / nC pF 250 740 ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2677
20 Tc = -55C
Transfer Characteristics
25C 15
Drain Current ID [A]
100C 10 150C
5
VDS = 25V TYP 0 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2677
100
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) []
10
ID = 5.0A 1
0.1
0.01
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [C]
2SK2677
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [C]
2SK2677
100
Safe Operating Area
10 100s 200s 1
Drain Current ID [A]
R DS(ON) limit
1ms
10ms 0.1 DC
Tc = 25C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2677
Transient Thermal Impedance
10
1
Transient Thermal Impedance jc(t) [C/W]
0.1
0.01 10-4 10-2
10-3
10-1
100
101
102
Time t [s]
2SK2677
100
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [C]
2SK2677
10000
Capacitance
Ciss
1000
Capacitance Ciss Coss Crss [pF]
Coss 100 Crss
10
f=1MHz Ta=25C TYP 1 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2677
Single Avalanche Current - Inductive Load
VDD = 100V VGS = 15V 0V Rg = 35
IAS = 10A
10
Single Avalanche Current IAS [A]
EAR = 26mJ
EAS = 260mJ
1 0.1 1
10
100
Inductance L [mH]
2SK2677
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [C]
2SK2677
500
Gate Charge Characteristics
20
VDS
Drain-Source Voltage VDS [V]
15 VGS VDD = 400V 300 200V 100V 200 10
5 100 ID = 10A TYP 0 0 50 100 0 150
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400

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