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APT5010JVRU3
500V 44A 0.100
S G D A
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
SO
2 T-
27
"UL Recognized"
ISOTOP(R)
* Faster Switching * Lower Leakage * Single Die MOSFET & FRED
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* 100% Avalanche Tested * Popular SOT-227 Package * PFC "Buck" Configuration
G
D A S
All Ratings: TC = 25C unless otherwise specified.
APT5010JVRU3 UNIT Volts Amps
500 44 176 30 40 450 3.6 -55 to 150 300 44 50
4 1
Continuous Drain Current @ TC = 25C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 44 0.100 25 250 100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5559 Rev A
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT5010JVRU3
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT
7410 1050 390 312 37 127 18 16 54 5
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
44 176 1.3 620 14.7
(Body Diode) (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s)
THERMAL / PACKAGE CHARACTERISTICS
Symbol RJC RJA VIsolation Torque Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT C/W Volts
0.28 40 2500 13
lb*in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.58mH, R = 25, Peak I = 44A j G L
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.2 0.05 0.1 0.05
PDM
0.01 0.005
Note: 0.02 0.01 SINGLE PULSE
t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC t1
050-5559 Rev A
Z 0.001 10-5
JC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT5010JVRU3
100 ID, DRAIN CURRENT (AMPERES) VGS=7V, 8V, 10V & 15V 100 6V ID, DRAIN CURRENT (AMPERES) 80 VGS=15V 6V VGS=7V, 8V & 10V 5.5V
80
60
5.5V
60
40
5V
40
5V
20 4.5V 4V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0
20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100 ID, DRAIN CURRENT (AMPERES)
TJ = -55C TJ = +25C TJ = +125C
1.5
V
GS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
80
1.4 1.3 1.2 VGS=10V 1.1 1.0 0.9 VGS=20V
60
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
40 TJ = +125C TJ = +25C 0 TJ = -55C
20
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 50 ID, DRAIN CURRENT (AMPERES)
0
20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
40
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25
I = 0.5 I [Cont.]
D D
1.15
1.10
30
1.05
20
1.00
10
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
0
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90
-50
V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
= 10V
2.0
1.1 1.0
1.5
0.9 0.8 0.7 050-5559 Rev A
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
APT5010JVRU3
200 100 ID, DRAIN CURRENT (AMPERES) 50 C, CAPACITANCE (pF) 1mS 10 5 10mS 100mS DC
OPERATION HERE LIMITED BY RDS (ON)
10S 100S
30,000
10,000 5,000
Ciss
Coss 1,000 500 Crss
1 .5
TC =+25C TJ =+150C SINGLE PULSE
.1
1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200 100 50 TJ =+150C TJ =+25C
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
16
VDS=100V VDS=250V
12 VDS=400V 8
10 5
4
100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
Diode Specifications Section
MAXIMUM RATINGS (UltraFast Recovery Diode)
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 80C, Duty Cycle = 0.5) RMS Forward Current Non-Repetitive Forward Surge Current (TJ = 45C, 8.3mS) Operating and StorageTemperature Range Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25C unless otherwise specified.
APT5010JVRU3 UNIT
600
Volts
30 60 320 -55 to 150 300
C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 30A VF Maximum Forward Voltage IF = 60A IF = 30A, TJ = 150C
050-5559 Rev A
MIN
TYP
MAX
UNIT
1.8 1.5 1.6 250 500 40
A pF Volts
IRM CT
Maximum Reverse Leakage Current
VR = VR Rated VR = VR Rated, TJ = 125C
Junction Capacitance, VR = 200V
APT5010JVRU3 DYNAMIC CHARACTERISTICS
Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 diM/dt IF = 30A, diF /dt = -240A/S, VR = 350V (See Figure 10) Characteristic Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/S, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/S, VR = 350V Forward Recovery Time IF = 30A, diF /dt = 240A/S, VR = 350V Reverse Recovery Current IF = 30A, diF /dt = -240A/S, VR = 350V Recovery Charge IF = 30A, diF /dt = -240A/S, VR = 350V Forward Recovery Voltage IF = 30A, diF /dt = 240A/S, VR = 350V Rate of Fall of Recovery Current TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C MIN TYP MAX UNIT
50 50 80 155 155 4 7.5 100
65
nS
10
Amps
15
nC
300 5
Volts
5 400
A/S
200
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance MIN TYP MAX UNIT C/W oz. gm.
0.90 20 1.06
Package Weight
30
2.0
1.0
D=0.5
, THERMAL IMPEDANCE (C/W)
0.5 0.2
0.1 0.1 0.05
0.05
0.02 Note:
PDM
JC
0.01 SINGLE PULSE 0.01
Z
t1 t2 Duty Factor D = t1/t2
0.005 -5 10
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
10
050-5559 Rev A
Peak TJ = PDM x ZJC + TC
APT5010JVRU3
100 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 1600
TJ = 100C VR = 350V
IF, FORWARD CURRENT (AMPERES)
80 TJ = 150C TJ = 100C 40
1200 60A 800 30A 400 15A
60
TJ = 25C TJ = -55C
20
0 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 15, Forward Voltage Drop vs Forward Current 40 IRRM, REVERSE RECOVERY CURRENT (AMPERES)
TJ = 100C VR = 350V
0
0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 16, Reverse Recovery Charge vs Current Slew Rate 2.0
Kf, DYNAMIC PARAMETERS (NORMALIZED)
60A 30
1.6 Qrr trr 1.2 trr 0.8 IRRM Qrr
20 30A 15A
10
0.4
0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 17, Reverse Recovery Current vs Current Slew Rate 200
TJ = 100C VR = 350V
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 18, Dynamic Parameters vs Junction Temperature 2500 tfr, FORWARD RECOVERY TIME (nano-SECONDS)
TJ = 100C VR = 350V IF = 30A
0.0
-50
25 Vfr, FORWARD RECOVERY VOLTAGE (VOLTS)
trr, REVERSE RECOVERY TIME (nano-SECONDS)
160 60A 120 30A 15A 80
2000 Vfr 1500
20
15
1000
10
40
500 tfr
5
0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 19, Reverse Recovery Time vs Current Slew Rate 800 500
0 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate
CJ, JUNCTION CAPACITANCE (pico-FARADS)
100
50 30 0.01
050-5559 Rev A
0.05
0.1
0.5 1 5 VR, REVERSE VOLTAGE (VOLTS)
10
50
100
200
Figure 21, Junction Capacitance vs Reverse Voltage
APT5010JVRU3
Vr
D.U.T. 30H
trr/Qrr Waveform
+15v diF /dt Adjust 0v -15v
PEARSON 411 CURRENT TRANSFORMER
Figure 22, Diode Reverse Recovery Test Circuit and Waveforms
1 2 3 4
IF - Forward Conduction Current diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. Zero IRRM - Peak Reverse Recovery Current. trr - Reverse Recovery Time Measured from Point of IF 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 5 0.5 IRRM 0.75 IRRM 2 Qrr = 1/2 (trr . IRRM) 1 4 6
5 6
Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Figure 23, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Anode
Drain Changed 2/10/99
Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474
Gate
050-5559 Rev A
"UL Recognized" File No. E145592
5,019,522 5,434,095 5,262,336 5,528,058

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