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| SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS BC846AZ1A BC846B1B BC847AZ1E BC847B1F BC847C1GZ BC848A1JZ BC848B1K BC848CZ1L BC849B2B BC849C2C BC850B2FZ BC850C-Z2G COMPLEMENTARY TYPES BC846 BC847 BC848 BC849 BC850 BC856 BC857 BC858 BC859 BC860 BC846 BC848 BC850 BC847 BC849 C B SOT23 E ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL Max Collector Cut-Off Current ICBO Max VCBO VCES VCEO VEBO IC ICM IBM IEM Ptot Tj:Tstg 80 80 65 6 50 50 45 30 30 30 100 200 200 200 330 -55 to +150 30 30 30 5 50 50 45 UNIT V V V V mA mA mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). BC846 BC847 BC848 BC849 BC850 15 5 90 250 200 600 300 600 700 900 580 660 700 770 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) Typ Max. Typ Max. Typ Max. VBE(sat) Typ Typ Base-Emitter Voltage VBE Min Typ Max Max UNIT CONDITIONS. nA VCB = 30V VCB = 30V A Tamb=150C mV IC=10mA, mV IB=0.5mA mV IC=100mA, mV IB=5mA mV IC=10mA* mV mV IC=10mA, IB=0.5mA mV IC=100mA, IB=5mA mV IC=2mA mV VCE=5V mV mV IC=10mA VCE=5V * Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the operating point IC = 11mA, VCE = 1V at constant base current. ELECTRICAL CHARACTERISTICS (Continued) PARAMETER Static Group VI Forward Current Ratio Group A SYMBOL hFE Min Typ Max Typ Min Typ Max Typ Group B hFE Typ Min Typ Max Typ Group C hFE Typ. Min Typ Max Typ Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure fT Cobo Cib0 N Typ Typ Max Typ Typ Max Typ Max 2 10 2 10 200 200 270 420 500 800 BC846 BC847 BC848 BC849 BC850 BC846 BC848 BC850 BC847 BC849 UNIT CONDITIONS. IC=2mA, VCE=5V 75 110 150 90 110 180 220 120 75 110 150 90 110 180 220 120 75 110 150 90 110 180 220 120 150 200 290 450 200 270 420 500 800 400 300 2.5 4.5 9 2 10 hFE IC=0.01mA, VCE=5V IC=2mA, VCE=5V IC=100mA, VCE=5V IC=0.01mA, VCE=5V IC=2mA, VCE=5V 270 420 500 800 270 420 500 800 IC=100mA, VCE=5V IC=0.01mA, VCE=5V IC=2mA, VCE=5V IC=100mA, VCE=5V MHz IC=10mA, VCE=5V f=100MHz pF pF pF VCB=10V f=1MHz VEB=0.5V f=1MHz VCE = 5V, IC=200A, RG=2k, f=1kHz, f=200Hz 1.2 4 1.2 4 1 4 1 3 dB dB dB dB VCE = 5V, IC=200A, RG=2k, f=30Hz to 15kHz at -3dB points VCE = 5V, IC=200A, RG=2k, f=10Hz to 50Hz at -3dB points Equivalent Noise Voltage en Max. 110 110 nV Spice parameter data is available upon request for this device BC846 BC848 BC850 PARAMETER BC847 BC849 ELECTRICAL CHARACTERISTICS (Continued) SYMBOL hie Min Typ Max Min Typ Max Min Typ Max Min Typ Max Group VI Group A Group B Group C Group VI Group A hre Typ Typ Typ Typ Min Typ Max Min Typ Max Min Typ Max Min Typ Max Group VI Group A Group B Group C hoe Typ Max Typ Max Typ Max Typ Max 20 40 18 30 30 60 60 110 60 110 60 110 450 600 900 20 40 18 30 2.5 1.5 2 75 110 150 125 220 260 2.5 1.5 2 75 110 150 125 220 260 BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS. k k k k k k k k k Dynamic Group VI Characteristics Group A 0.4 1.2 2.2 1.6 2.7 4.5 0.4 1.2 2.2 1.6 2.7 4.5 0.4 1.2 2.2 1.6 2.7 4.5 3.2 4.5 8.5 6 8.7 15 2.5 1.5 2 3 75 110 150 125 220 260 240 330 500 450 600 900 20 40 18 30 Group B Group C 6 8.7 15 2 3 6 8.7 15 2 3 k k k x10-4 x10-4 x10-4 x10-4 hfe VCE=5V Ic=2mA Group B Group C 450 600 900 450 600 900 s s s s s s s s |
Price & Availability of BC847A-Z1E
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