View MRF161_41826.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MRF161
SILICON N-CHANNEL RF POWER MOSFET
DESCRIPTION:
The MRF161 is an EnhancementMode N-Channel MOS Broadband RF Power Transistor for Wideband Large Signal Amplifier and Oscillator Applications from 2.0 to 400 MHz.
PACKAGE STYLE .500 4L FLG
.112x45 A FULL R L
S
D
O.125 NOM.
C B
G
D G F
S
E
MAXIMUM RATINGS
ID VDSS VGS PDISS TJ TSTG JC
O O
H
IJ
K
900 mA
DIM MINIMUM
inches / mm
MAXIMUM
inches / mm
65 V 40 V 17.5 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 10 C/W
O O O O
A B C D E F G H I J K L
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81
.230 / 5.84
.255 / 6.48 .7.30 / 18.54
.980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11
.980 / 24.89
1.050 / 26.67
CHARACTERISTICS
SYMBOL
V(BR)DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss NF Gps
TC = 25 C
O
NONE
TEST CONDITIONS
ID = 5.0 mA VDSS = 28 V VGS = 40 V VDS = 10 V VDS = 10 V VDS = 28 V VGS = 0 V VGS = 0 V VDS = 0 V ID = 10 mA ID = 100 mA VGS = 0 V f = 1.0 MHz
MINIMUM
65
TYPICAL
MAXIMUM
1.0 1.0
UNITS
V mA A V mmhos
1.0 80 7.0 9.7 2.3 3.0 11.0 45 13.5 50
6.0
pF dB dB %
VDS = 28 V ID = 100 mA f = 400 MHz ZS = 67.7+j = 14.1 ZL = 14.5+j = 25.7 VDD = 28 V IDQ = 50 mA Pout = 5.0 W
IDQ = 50 mA Pout = 5.0 W VDD = 28 V VSWR = 30:1 AT ALL PHASE ANGLES
NO DEGRADRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

▲Up To Search▲

Price & Availability of MRF161

	To Download MRF161 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .