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| 2SC3835 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3835 200 120 8 7(Pulse14) 3 70(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Humidifier, DC-DC Converter, and General Purpose (Ta=25C) 2SC3835 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ V MHz pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=8V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=12V, IE=-0.5A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 Unit A A 19.90.3 V 4.0 a b o3.20.1 V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 50 RL () 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.6 ton (s) 0.5max tstg (s) 3.0max tf (s) 0.5max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t)( V ) 7 200 mA V CE ( sat ) - I B Characteristics (Typical) 2.6 I C - VBE Temperature Characteristics (Typical) 7 (V C E= 4V) 150 mA mA 6 100 6 Collector Current I C( A) 2 Collector Current I C( A) 5 60mA 40m A 5 4 4 p) Tem mp) (Cas e Te (Ca 1 se 3 20 mA 3 C 1 1 0 0.005 0.01 0 0 1 2 3 4 0.05 0.1 0.5 1 0 0 -30C I B =10mA 25C 125 2 2 (Case Temp 5A ) 3A IC = 1 A 0.5 Base-Emittor Voltage V B E( V) 1.0 1.1 Collector-Emitter Voltage V C E( V) Base Current I B( A) (VCE=4V) 200 DC C urrent G ain h FE DC C urrent G ain h FE 300 1 2 5 C (V C E= 4V) j- a( C/W) Transient Thermal Resistance hFE - IC Characteristics (Typical) h FE - IC Temperature Characteristics (Typical) j-a - t Characteristics 5 Typ 100 100 25 C -30 50 C 50 1 0.5 0.4 1 10 100 Time t(ms) 1000 2000 20 0.02 0.1 0.5 1 5 7 20 0.01 0.05 0.1 0.5 1 57 Collector Current I C( A) Collector Current I C( A) f T - IE Characteristics (Typical) (V C E= 12V) 30 20 10 Cut- off F req uency f T( M H Z) 5 Collector Curr ent I C( A) 20 Safe Operating Area (Single Pulse) 10 P c - T a Derating 70 0 s Ma xim um Powe r Dissipat io n P C( W) 60 W 10 ms 50 ith In fin ite 40 he 1 0.5 Without Heatsink Natural Cooling at si nk 30 10 20 0.1 0 -0.01 0.05 -0.05 -0.1 -0.5 -1 -5 5 10 50 120 200 Emitter C urrent I E( A) Collector-Emitter Voltage V C E( V) 10 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 75 |
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