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| 2SC3890 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3890 500 400 10 7(Pulse14) 2 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 50typ (Ta=25C) 2SC3890 Unit A V V V MHz pF 13.0min 16.90.3 8.40.2 A 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 66 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.6 ton (s) 1max tstg (s) 3max tf (s) 0.5max 2.54 3.9 BCE IC - VCE Characteristics (Typical) 7 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E (s a t)( V ) (IC/IB=5) I C - V BE Temperature Characteristics (Typical) 7 (VCE=4V) 6 800 mA A 600m 6 Collector Current I C (A) V B E( sat) 1 -55C (Cas e Temp) mp) ) as e 2 5 Tem p) C I B= 40 0m A Collector Current I C (A) 300 mA 4 200 mA Tem p) e Te 25C (Cas 125C (Case 4 ) emp se T 25C (Ca 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. Temp 125 C 2 2 12 5 C VCE(sat) 0 0.02 0.05 0.1 0.5 1 -5 5 C 0 0 1 2 3 4 57 0 0 0.2 0.4 0.6 0.8 -55C (C (Cas 100mA (Ca e Te se mp) 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C (A) Base-Emittor Voltage V B E( V) (V C E= 4V) 70 DC Cur rent Gain h FE 50 j - a( C/W) hFE - IC Characteristics (Typical) t o n*t s t g *t f( s) 7 5 t on *t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 5 Typ V C C 200V IC:IB1:I B 2= 10:1:-2 1 0.5 t s tg Transient Thermal Resistance Switching T im e 1 t on 10 7 0.02 0.05 0.1 0.5 1 5 7 0.5 0.3 tf 0.1 0.2 0.5 1 5 7 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 5 Co lle ctor Cu rre nt I C( A) Collector Curre nt I C( A) 10 Reverse Bias Safe Operating Area 20 10 30 P c - T a Derating 0 s 5 M aximu m Power D issi pation P C( W) W ith 20 In fin ite he at si 1 Without Heatsink Natural Cooling 1 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1% nk 0.5 0.5 10 Without Heatsink 2 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 0.1 5 10 50 100 500 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 81 |
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