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| SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 BCX5316 C COMPLIMENTARY TYPE - BCX5616 PARTMARKING DETAIL - AL C B SOT89 E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE -100 -80 -5 -1.5 -1 1 -65 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(on) h FE 25 100 25 150 25 MIN. -100 -80 -5 -0.1 -20 -10 -0.5 -1.0 TYP. MAX. UNIT V V V CONDITIONS. IC =-100A IC =-10mA I E =-10A V CB =-30V V CB =-30V, T amb =150C V EB =-4V I C =-500mA, I B =-50mA* I C =-500mA, V CE =-2V* I C =-5mA, V CE =-2V* I C =-150mA, V CE =-2V* I C =-500mA, V CE =-2V* MHz pF I C =-50mA, V CE =-10V, f=100MHz V CB =-10V, f=1MHz A A A V V 250 fT C obo *Measured under pulsed conditions. TBA |
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