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| DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D119 BYD73 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1996 Sep 18 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack. handbook, 4 columns BYD73 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD81 package through ImplotecTM(1) technology. This package is k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD73A BYD73B BYD73C BYD73D BYD73E BYD73F BYD73G VR continuous reverse voltage BYD73A BYD73B BYD73C BYD73D BYD73E BYD73F BYD73G IF(AV) average forward current BYD73A to D BYD73E to G IF(AV) average forward current BYD73A to D BYD73E to G Ttp = 55 C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 - - - - - - - - - - - 50 100 150 200 250 300 400 1.75 1.70 V V V V V V V A A PARAMETER repetitive peak reverse voltage - - - - - - - 50 100 150 200 250 300 400 V V V V V V V CONDITIONS MIN. MAX. UNIT 1.00 0.95 A A 1996 Sep 18 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYD73A to D BYD73E to G IFRM repetitive peak forward current BYD73A to D BYD73E to G IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off Tamb = 60 C; see Figs 8 and 9 - - - CONDITIONS Ttp = 55 C; see Figs 6 and 7 - - BYD73 series MIN. MAX. 14 15 8.5 9.5 25 A A A A A UNIT ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature - -65 -65 10 +175 +175 mJ C C ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD73A to D BYD73E to G VF forward voltage BYD73A to D BYD73E to G V(BR)R reverse avalanche breakdown voltage BYD73A BYD73B BYD73C BYD73D BYD73E BYD73F BYD73G IR reverse current VR = VRRMmax; see Fig.14 VR = VRRMmax; Tj = 165 C; see Fig.14 trr reverse recovery time BYD73A to D BYD73E to G when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 IR = 0.1 mA 55 110 165 220 275 330 440 - - - - - - - - - - - - - - - - - - 1 100 V V V V V V V A A IF = 1 A; see Figs 12 and 13 CONDITIONS IF = 1 A; Tj = Tj max; see Figs 12 and 13 MIN. - - - - TYP. - - - - MAX. 0.75 0.83 0.98 1.05 V V V V UNIT - - - - 25 50 ns ns 1996 Sep 18 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL Cd PARAMETER diode capacitance BYD73A to D BYD73E to G dI R -------dt maximum slope of reverse recovery current BYD73A to D BYD73E to G THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.17 CONDITIONS f = 1 MHz; VR = 0 V; see Fig.15 MIN. - - BYD73 series TYP. 50 40 MAX. - - UNIT pF pF - - - - 4 5 A/s A/s VALUE 60 120 UNIT K/W K/W 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.16. For more information please refer to the "General Part of associated Handbook". 1996 Sep 18 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers GRAPHICAL DATA handbook, halfpage MGC535 BYD73 series 2.0 handbook, halfpage MGC536 2.0 IF(AV) (A) 1.6 lead length 10 mm IF(AV) (A) 1.6 lead length 10 mm 1.2 1.2 0.8 0.8 0.4 0.4 0 0 BYD73A to D a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 Ttp ( oC) 200 0 0 BYD73E to G a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 Ttp ( oC) 200 Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MGC538 MGC537 handbook, halfpage 1.6 handbook, halfpage 1.6 IF(AV) (A) 1.2 IF(AV) (A) 1.2 0.8 0.8 0.4 0.4 0 0 100 Tamb ( oC) 200 0 0 100 Tamb ( oC) 200 BYD73A to D a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.16. Switched mode application. BYD73E to G a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.16. Switched mode application. Fig.4 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.5 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 1996 Sep 18 5 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers 16 BYD73 series MCD605 handbook, full pagewidth I FRM (A) = 0.05 0.1 8 0.2 0.5 1 0 10 -2 10 -1 1 10 10 2 10 3 t p (ms) 10 4 BYD73A to D Ttp = 55 C; Rth j-tp = 60 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD607 handbook, 16 pagewidth full = 0.05 I FRM (A) 0.1 8 0.2 0.5 1 0 10 -2 10 -1 1 10 10 2 10 3 t p (ms) 10 4 BYD73E to G Ttp = 55C; Rth j-tp = 60 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 6 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers 10 BYD73 series MCD604 handbook, full pagewidth = 0.05 I FRM (A) 0.1 5 0.2 0.5 1 0 10 -2 10 -1 1 10 10 2 10 3 t p (ms) 10 4 BYD73A to D Tamb = 60 C; Rth j-a = 120 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD606 handbook, 10 pagewidth full = 0.05 I FRM (A) 0.1 5 0.2 0.5 1 0 -2 10 10 -1 1 10 10 2 10 3 t p (ms) 10 4 BYD73E to G Tamb = 60 C; Rth j-a = 120 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 7 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series MGC539 MGC540 handbook, halfpage 2 handbook, halfpage 2 a=3 P (W) 2.5 2 1.57 1.42 P (W) a=3 2.5 2 1.57 1.42 1 1 0 0 1 IF(AV) (A) 2 0 0 1 IF(AV) (A) 2 BYD73A to D a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. BYD73E to G a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. MCD594 MGC531 handbook, halfpage 10 IF (A) 8 handbook, halfpage 10 IF (A) 8 6 6 4 4 2 2 0 0 1 VF (V) 2 0 0 1 2 VF (V) 3 BYD73A to D Dotted line: Tj = 175 C. Solid line: Tj = 25 C. BYD73E to G Dotted line: Tj = 175 C. Solid line: Tj = 25 C. Fig.12 Forward current as a function of forward voltage; maximum values. 1996 Sep 18 8 Fig.13 Forward current as a function of forward voltage; maximum values. Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series 103 handbook, halfpage IR (A) 102 MGA853 2 10 handbook, halfpage MCD608 Cd (pF) 10 A, B, C, D 10 E, F, G 1 0 100 T j ( o C) 200 1 1 10 10 2 V R (V) 10 3 VR = VRRMmax. f = 1 MHz; Tj = 25 C. Fig.14 Reverse current as a function of junction temperature; maximum values. Fig.15 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 50 25 IF andbook, halfpage dI F 7 50 dt t rr 10% t dI R dt 2 IR 3 MGA200 100% MGC499 Dimensions in mm. Fig.16 Device mounted on a printed-circuit board. Fig.17 Reverse recovery definitions. 1996 Sep 18 9 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series handbook, full pagewidth DUT + IF (A) 0.5 1 t rr 10 25 V 50 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.18 Test circuit and reverse recovery time waveform and definition. 1996 Sep 18 10 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers PACKAGE OUTLINE BYD73 series handbook, full pagewidth 5 max 0.81 max 2.15 max MBC051 28 min 3.8 max 28 min Dimensions in mm. The marking band indicates the cathode. Fig.19 SOD81. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 18 11 |
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