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| Ordering number : ENN7133 FW245 N-Channel Silicon MOSFET FW245 DC / DC Converter Applications Features * * * Package Dimensions unit : mm 2129 [FW245] 8 5 0.3 4.4 6.0 Low ON-resistance. 4V drive. Ultrahigh-speed switching. 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings 30 20 7 Unit V V A A W W C C PW10s, duty cycle1% Mounted on a ceramic board (1200mm 2!0.8mm) 1unit Mounted on a ceramic board (1200mm2!0.8mm) 52 1.7 2.0 150 --55 to +150 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=10V ID=4A, VGS=4.5V Ratings min 30 1 10 1.0 7 10 26 39 34 55 2.4 typ max Unit V A A V S m m Marking : W245 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11502 TS IM TA-2608 No.7133-1/4 FW245 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A IS=7A, VGS=0 Ratings min typ 550 170 90 9 73 41 54 10 1.5 1.0 0.82 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=15V 10V 0V VIN ID=7A RL=2.1 VOUT Electrical Connection D1 D1 D2 D2 PW=10s D.C.1% VIN D G P.G 50 Top view S FW245 S1 G1 S2 G2 10 ID -- VDS 10.0V 6.0V 10 9 8 ID -- VGS VDS=10V 9 8 8.0V 4.5 V Drain Current, ID -- A 5V Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 3.0 V 7 6 5 4 3. 2 1 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 Ta= 7 2.0 VGS=2.5V 3 25 2.5 3.0 C 5C --25C 3.5 4.0 Drain-to-Source Voltage, VDS -- V 60 IT00557 60 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT00558 RDS(on) -- Ta =4. GS A, V 5V Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 0 --50 --25 0 25 50 75 100 125 150 50 ID=7.0A 4.0A 40 4. I D= 0 30 I D= , VG 7.0A 10. S= 0V 20 10 Gate-to-Source Voltage, VGS -- V IT04012 Ambient Temperature, Ta -- C IT04013 No.7133-2/4 FW245 Forward Transfer Admittance, yfs -- S 100 7 5 3 yfs -- ID VDS=10V 10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF -- A 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 10 IT00561 7 C 25 C --25 Ta= 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.3 75C Ta=7 5C 25C 0.5 0.001 0.2 0.4 0.6 --25 C 0.7 0.8 0.9 1.0 1.1 1.2 1000 7 5 Ciss, Coss, Crss -- VDS f=1MHz Drain Current, ID -- A Diode Forward Voltage, VSD -- V 10 9 IT00562 VGS -- Qg Ciss Gate-to-Source Voltage, VGS -- V VDS=10V ID=7.0A 8 7 6 5 4 3 2 1 Ciss, Coss, Crss -- pF 3 2 Coss Crss 100 7 5 3 2 10 0 5 10 15 20 25 30 IT00563 0 0 1 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage, VDS -- V 1000 7 5 Total Gate Charge, Qg -- nC 100 7 5 3 2 IT04014 SW Time -- ID ASO IDP=52A 10 VDD=15V VGS=10V Drain Current, ID -- A <10s 1m s Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 100s td(off) 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=7A 10 ms DC 0m s tr td(on) tf op era tio n Operation in this area is limited by RDS(on). 3 5 7 1.0 2 3 5 Drain Current, ID -- A 2.5 10 IT04015 7 0.01 0.01 2 3 Ta=25C Single pulse Mounted on a ceramic board (1200mm2!0.8mm) 1unit 5 7 0.1 23 5 7 1.0 23 5 7 10 23 PD -- Ta Drain-to-Source Voltage, VDS -- V 5 7 100 IT04016 Mounted on a ceramic board (1200mm2!0.8mm) Allowable Power Dissipation, PD -- W 2.0 1.7 1.5 To ta ld 1u 1.0 iss nit ipa tio n 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT04017 No.7133-3/4 FW245 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. PS No.7133-4/4 |
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