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| Switching Diodes MA6X128 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 0.15 2.8 - 0.3 1.5 - 0.05 6 1.9 0.2 0.95 0.95 5 1 + 0.25 + 0.2 0.65 0.15 0.3 - 0.05 + 0.1 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC)*1 Peak forward current*1 Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 -55 to +150 Unit V V mA mA mA C C 1 : Cathode 3,4 4 : Cathode 1,2 2 : Anode 1 5 : Anode 3 3 : Anode 2 6 : Anode 4 Mini Type Package (6-pin) Marking Symbol: M2V Internal Connection 6 5 4 1 2 3 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 80 2 3 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0 to 0.1 * Four-element contained in one package, allowing high-density mounting * Centrosymmetrical wiring, allowing to free from the taping direction * The mirror image wiring of (MA6X123) * Short reverse recovery time trr * Small terminal capacitance, Ct * High breakdown voltage (VR = 80 V) 2.9 - 0.05 + 0.2 2 4 3 1.1 - 0.1 0.1 to 0.3 0.4 0.2 0.8 0.16 - 0.06 + 0.2 + 0.1 1.45 I Features 1 MA6X128 IF V F 103 Switching Diodes IR V R 100 Ta = 150C 1.6 1.4 VF Ta 102 10 Forward current IF (mA) Reverse current IR (A) Forward voltage VF (V) 1.2 1.0 0.8 0.6 0.4 0.2 IF = 100 mA 100C 1 10 1 Ta = 150C 100C 25C 0.1 25C 0.01 10 mA 3 mA 10-1 - 20C 10-2 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 Forward voltage VF (V) Reverse voltage VR (V) 0 -40 0 40 80 120 160 200 Ambient temperature Ta (C) IR Ta 102 VR = 75 V 10 35 V 1.2 Ct VR 1 000 IF(surge) tW Forward surge current IF (surge) (A) f = 1 MHz Ta = 25C Ta = 25C IF(surge) tW Terminal capacitance Ct (pF) 1V 1.0 300 100 30 10 3 1 0.3 0.1 0.03 Reverse current IR (A) Non repetitive 0.8 1 0.6 10-1 0.4 10-2 0.2 10-3 -40 0 40 80 120 160 200 0 0 20 40 60 80 100 120 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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