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| OMY140 OMY340 OMY240 OMY440 POWER MOSFETS IN HERMETIC ISOLATED TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFETs In Hermetic Metal Package FEATURES * * * * * Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels Equivalent To IRFY 140 Series DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS @ 25C PART NUMBER OMY140 OMY240 OMY340 OMY440 VDS 100V 200V 400V 500V RDS(on) .115 .21 .58 .88 ID(MAX) 14A 14A 10A 7A 3.1 SCHEMATIC CONNECTION DIAGRAM 1. GATE 2. DRAIN 3. SOURCE 123 4 11 R2 Supersedes 1 07 R1 3.1 - 5 3.1 OMY140 - OMY440 ELECTRICAL CHARACTERISTICS: STATIC P/N OMY140 Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 14 0.1 0.2 2.0 100 TC = 25 unless otherwise noted ELECTRICAL CHARACTERISTICS: STATIC P/N OMY240 Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 14 1.8 0.1 0.2 2.0 200 TC = 25 unless otherwise noted Min. Typ. Max. Units Test Conditions V 4.0 100 -100 0.25 1.0 V nA nA mA mA A 1.40 1.73 .115 .20 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 15 A VGS = 10 V, ID = 15 A VGS = 10 V, ID = 15 A, TC = 125 C Min. Typ. Max. Units Test Conditions V 4.0 100 - 100 0.25 1.0 V nA nA mA mA A 2.1 0.21 0.40 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A, TC = 125 C VDS(on) Static Drain-Source On-State VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 gfs Ciss Coss Crss Td(on) tr Td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 10 1275 550 160 16 19 42 24 S(W ) VDS 2 VDS(on), ID = 15 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID @5 A Rg = 5 W , VGS =10 V (MOSFET) switching times are essentially independent of operating temperature. gfs Ciss Coss Crss Td(on) tr Td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 6.0 1000 250 100 17 52 36 30 S(W ) VDS 2 VDS(on), ID = 10 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD =75 V, ID @ 18 A Rg =5 W , VGS= 10 V (MOSFET) switching times are essentially independent of operating temperature. BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 200 - 2.0 V ns - 108 A - 27 A Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350 - 18 - 72 -1.5 A A V ns TC = 25 C, IS = -24 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms VSD trr 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) (W ) 3.1 - 6 DYNAMIC DYNAMIC Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D S TC = 25 C, IS = -18 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms ELECTRICAL CHARACTERISTICS: STATIC P/N OMY340 Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 10 2.5 0.1 0.2 2.0 400 TC = 25 unless otherwise noted ELECTRICAL CHARACTERISTICS: STATIC P/N OMY440 Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 4.5 3.2 0.1 0.2 2.0 500 TC = 25 unless otherwise noted Min. Typ. Max. Units Test Conditions V 4.0 100 -100 0.25 1.0 V nA nA mA mA A 2.9 0.58 1.16 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 5 A VGS = 10 V, ID = 5 A VGS = 10 V, ID = 5 A, TC = 125 C Min. Typ. Max. Units Test Conditions V 4.0 100 - 100 0.25 1.0 V nA nA mA mA A 3.52 0.88 1.76 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 4 A VGS = 10 V, ID = 4 A VGS = 10 V, ID = 4 A, TC = 125 C VDS(on) Static Drain-Source On-State VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 gfs Ciss Coss Crss Td(on) tr Td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 4.0 4.4 1150 165 70 17 12 45 30 S(W ) VDS 2 VDS(on), ID = 5 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 175 V, ID = 5 A Rg = 5 W , VDS =10V gfs Ciss Coss Crss Td(on) tr Td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 4.0 4.8 1225 200 85 17 5 42 14 S(W ) VDS 2 VDS(on), ID = 4 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 200 V, ID = 4 A Rg = 5 W , VDS =10 V (MOSFET) switching times are essentially independent of operating temperature. BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 530 -2 V ns - 40 A - 10 A Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700 -8 - 32 -2 TC = 25 C, IS = -10 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms VSD trr ns 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) A A V (W ) 3.1 - 7 DYNAMIC DYNAMIC Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D S TC = 25 C, IS = -18 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms OMY140 - OMY440 3.1 OMY140 - OMY440 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Parameter VDS VDGR ID @ TC = 25C ID @ TC = 100C IDM VGS PD @ TC = 25C PD @ TC = 100C Junction To Case Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current 2 Continuous Drain Current 2 Pulsed Drain Current 1 OMY140 100 100 14 14 56 20 125 50 1.0 .015 OMY240 200 200 14 11 56 20 125 50 1.0 .015 OMY340 400 400 10 6 40 20 125 50 1.0 .015 OMY440 500 500 8 5 32 20 125 50 1.0 .015 Units V V A A A V W W W/C W/C Gate-Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction To Ambient Linear Derating Factor TJ Tstg Lead Temperature Operating and Storage Temperature Range (1/16" from case for 10 secs.) -55 to 150 300 -55 to 150 -55 to 150 -55 to 150 300 300 300 C C 1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%. 2 Package pin limitation = 10 Amps THERMAL RESISTANCE RthJC RthJA Junction-to-Case Junction-to-Ambient 1.00 65 C/W C/W Free Air Operation POWER DERATING MECHANICAL OUTLINE .420 .410 .200 .190 .045 .035 .665 .645 .537 .527 .430 .410 .038 MAX. .150 .140 3.1 .750 .500 .005 .035 .025 .100 TYP. .120 TYP. PACKAGE OPTIONS MOD PAK 6 PIN SIP Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 |
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