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| NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q Complementary types: SMBT 2907, SMBT 2907 A (PNP) q Type SMBT 2222 SMBT 2222 A Marking s1B s1P Ordering Code (tape and reel) Q68000-A6481 Q68000-A6473 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 77 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values Unit SMBT 2222 SMBT 2222 A 30 60 5 40 75 6 600 330 150 - 65 ... + 150 mA mW C V 290 220 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 2222 SMBT 2222 A Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA SMBT 2222 SMBT 2222 A Collector-base breakdown voltage IC = 10 A SMBT 2222 SMBT 2222 A Emitter-base breakdown voltage IE = 10 A SMBT 2222 SMBT 2222 A Collector cutoff current VCB = 50 V VCB = 60 V VCB = 50 V, TA = 150 C VCB = 60 V, TA = 150 C Emitter cutoff current VEB = 3 V DC current gain IC = 100 A, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 1 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1) IC = 10 mA, VCE = 10 V, TA = 55 C SMBT 2222 SMBT 2222 A SMBT 2222 SMBT 2222 A IEB0 hFE 35 50 75 50 100 30 40 35 VCEsat - - - - VBEsat - 0.6 - - - - - - 1.3 1.2 2.6 2.0 - - - - 0.4 0.3 1.6 1.0 - - - - - - - - - - - - 300 - - - V V(BR)CE0 30 40 V(BR)CB0 60 75 V(BR)EB0 5 6 ICB0 - - - - - - - - - - 10 10 10 10 10 nA nA A A Values typ. max. Unit V - - - - - - - - - - - - nA - SMBT 2222 SMBT 2222 A SMBT 2222 A Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA SMBT 2222 SMBT 2222 A IC = 500 mA, IB = 50 mA SMBT 2222 SMBT 2222 A Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA SMBT 2222 SMBT 2222 A IC = 500 mA, IB = 50 mA SMBT 2222 SMBT 2222 A 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 SMBT 2222 SMBT 2222 A Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz SMBT 2222 SMBT 2222 A Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz SMBT 2222 SMBT 2222 A Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A IC = 10 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A IC = 10 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A IC = 10 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz SMBT 2222 IC = 10 mA, VCE = 10 V, f = 1 kHz SMBT 2222 A Collector-base time constant IE = 20 mA, VCB = 10 V, f = 31.8 MHz SMBT 2222 A Noise figure IC = 100 A, VCE = 10 V, RS = 1 k f = 1 kHz SMBT 2222 A rb'Cc 25 - - - 200 150 ps h12e - - h21e 50 75 h22e 5 - 35 - - 300 375 S Values typ. max. Unit fT 250 300 Cobo Cibo - - h11e 2 0.25 - - 8 1.25 - - 30 25 - - - - - - 8 MHz pF k 10-4 - - 8.0 4.0 - F - - 4.0 dB Semiconductor Group 3 SMBT 2222 SMBT 2222 A Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics (continued) VCC = 30 V, IC = 150 mA, IB1 = 15 mA VBE(off) = 0.5 V Delay time Rise time VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA Storage time Fall time Values typ. max. Unit td tr tstg tf - - - - - - - - 10 25 225 60 ns ns ns ns Test circuits Delay and rise time Storage and fall time Oscillograph: R > 100 C < 12 pF tr < 5 ns Semiconductor Group 4 SMBT 2222 SMBT 2222 A Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance Ccb = f (VCB) f = 1 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 20 V Semiconductor Group 5 SMBT 2222 SMBT 2222 A Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 10 V Delay time td = f (IC) Rise time tr = f (IC) Storage time tstg = f (IC) Fall time tf = f (IC) Semiconductor Group 6 |
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