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| SMBT3906S PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package Complementary type: SMBT3904S (NPN) 4 5 6 2 1 C1 6 B2 5 E2 4 3 VPS05604 TR2 TR1 1 E1 2 B1 3 C2 EHA07175 Type SMBT3906S Maximum Ratings Parameter Marking s2A Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 40 5 200 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 115 C Junction temperature Storage temperature mA mW C Thermal Resistance Junction - soldering point1) RthJS 140 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBT3906S Electrical Characteristics at TA =25C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 DC current gain 1) IC = 100 A, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat VCEsat hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit 40 40 5 - - 50 V nA - 60 80 100 60 30 - 300 V 0.65 - - 0.25 0.4 0.85 0.95 1) Pulse test: t < 300s; D < 2% 2 Nov-30-2001 SMBT3906S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 100 A, VCE = 5 V, RS = 1 k, Delay time F f = 200 Hz td 35 ns 4 Open-circuit output admittance h21e h22e 100 3 400 60 S h12e 0.1 10 10-4 h11e 2 12 k Ceb 10 Ccb 4.5 pF fT 250 MHz Symbol min. Values typ. max. Unit dB VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA tf 75 tstg 225 tr 35 f = 1 kHz, 3 Nov-30-2001 SMBT3906S Test circuit Delay and rise time -3.0 V 275 <1.0 ns +0.5 V 10 k 0 -10.6 V D = 2% C <4.0 pF 300 ns EHN00059 Storage time and fall time -3.0 V <1.0 ns +9.1 V 0 -10.9 V 10 < t 1< 500 s D = 2% 10 k 275 C 1N916 <4.0 pF t1 EHN00060 4 Nov-30-2001 SMBT3906S Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Nov-30-2001 SMBT3906S DC current gain hFE = f (IC ) VCE = 10V, normalized EHP00774 Saturation voltage IC = f (VBEsat, VCEsat) h FE = 10 EHP00767 10 1 2 mA h FE 5 C 10 2 5 125 C V CE V BE 10 0 25 C 10 1 5 -55 C 5 10 -1 -1 10 10 0 5 10 0 5 10 1 mA 10 2 0 0.2 0.4 0.6 0.8 1.0 V 1.2 C V BE sat , V CE sat Short-circuit forward current transfer ratio h21e = f(IC) VCE = 10V, f = 1MHz 10 3 EHP00770 Open-circuit output admittance h 22e = f (IC) VCE = 10V, f = 1MHz 10 2 s h 22e 5 EHP00771 h 21e 5 10 2 10 1 5 5 10 1 -1 10 5 10 0 mA 5 10 1 10 0 -1 10 5 10 0 mA 5 10 1 C C 6 Nov-30-2001 SMBT3906S Delay time td = f (IC ) Rise time tr = f (IC) EHP00772 Storage time t stg = f(IC) 10 3 ns t r ,t d 10 2 tr td 10 3 ns ts EHP00762 h FE = 10 25 C 125 C 10 2 h FE = 20 10 h FE = 20 10 VCC = 3 V 15 V 40 V 10 1 V BE = 2 V 0V 10 1 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 C C Fall time tf = f (IC) Rise time tr = f (IC) 10 3 ns tf 25 C 125 C EHP00773 10 3 ns tr 25 C EHP00764 VCC = 40 V 10 2 h FE = 20 10 2 125 C VCC = 40 V h FE = 10 10 1 h FE = 10 10 1 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 C C 7 Nov-30-2001 SMBT3906S Input impedance h11e = f (IC ) VCE = 10V, f = 1kHz 10 2 h 11e k EHP00768 Open-circuit reverse voltage transfer ratio h12e = f (I C) VCE = 10V, f = 1kHz 10 -3 h 12e 5 EHP00769 10 1 5 10 -4 10 0 5 5 10 -1 -1 10 5 10 0 mA 10 1 10 -5 10 -1 C 5 10 0 mA C 10 1 8 Nov-30-2001 |
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