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| NPN Silicon Transistors SMBT 6428 SMBT 6429 For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Type SMBT 6428 SMBT 6429 Marking s1K s1L Ordering Code (tape and reel) Q68000-A8321 Q68000-A8322 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values SMBT 6428 SMBT 6429 50 60 45 55 6 200 330 150 - 65 ... + 150 Unit V mA mW C 310 240 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 6428 SMBT 6429 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBT 6428 SMBT 6429 Collector-base breakdown voltage IC = 10 A SMBT 6428 SMBT 6429 Emitter-base breakdown voltage IE = 1 A Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 C Collector cutoff current VCE = 30 V, IB = 0 Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain IC = 10 A, VCE = 5 V IC = 100 A, VCE = 5 V IC = 1 mA, VCE = 5 V SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 VCEsat - - VBE(on) 0.56 - - - 0.2 0.6 0.66 V(BR)CE0 50 45 V(BR)CB0 60 55 V(BR)EB0 ICB0 - - ICE0 IEB0 hFE 250 500 250 500 250 500 250 500 - - - - - - - - - - 650 1250 - - - - V - - - - - - 10 10 100 10 - nA A Values typ. max. Unit V - - - - - - - - - - 6 nA IC = 10 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage IC = 1 mA, VCE = 5 V 1) Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 SMBT 6428 SMBT 6429 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 5 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz fT Cobo Cibo 100 - - - - - 700 3 15 MHz pF Values typ. max. Unit Semiconductor Group 3 SMBT 6428 SMBT 6429 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 4 SMBT 6428 SMBT 6429 Base-emitter saturation voltage IC = f (VBEsat), hFE = 40 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 40 Collector current IC = f (VBE) VCE = 1 V DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 5 SMBT 6428 SMBT 6429 Collector cutoff current ICB0 = f (TA) VCB = 30 V Semiconductor Group 6 |
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