View SMBTA06M_43381.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SMBTA 06M
NPN Silicon AF Transistor * High breakdown voltage * Low collector-emitter saturation voltage * Complementary type: SMBTA 56M (PNP)
4 5 3 2 1
VPW05980
Type SMBTA 06M
Marking Ordering Code Pin Configuration s1G Q62702-A3473
Package
1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S 95 C Junction temperature Storage temperature Symbol Value 80 80 4 500 1 100 200 1 150 - 65...+150 W C mA A mA Unit V
VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
110 55
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11
Jun-08-1998 1998-11-01
SMBTA 06M
Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. 100 20 100
Unit
V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I CEO hFE
80 80 4 -
V
I C = 1 mA, I B = 0
Collector-base breakdown voltage
I C = 100 A, IB = 0 Emitter-base breakdown voltage I E = 10 A, I C = 0 Collector cutoff current VCB = 80 V, I E = 0
Collector cutoff current
V nA A nA -
VCB = 80 V, I E = 0 , TA = 150 C
Collector cutoff current
VCE = 60 V, I B = 0
DC current gain 1)
I C = 10 mA, VCE = 1 V I C = 100 mA, V CE = 1 V
Collector-emitter saturation voltage1)
100 100
-
0.25 1.2 V V
VCEsat VBE(ON)
-
I C = 100 mA, IB = 10 mA
Base-emitter voltage 1)
I C = 100 mA, V CE = 1 V
AC Characteristics Transition frequency
fT Ccb
-
100 5
-
MHz pF
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300s; D < 2% Semiconductor Group Semiconductor Group 22
Jun-08-1998 1998-11-01
SMBTA 06M
Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy
1200
mW
TS P tot
800
TA
600
400
200
0 0
20
40
60
80
100
120 C
150
TA,TS
Permissible Pulse Load R thJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 2 10 3
RthJS
10 1
Ptotmax / PtotDC
K/W
-
10 2
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Semiconductor Group Semiconductor Group
33
Jun-08-1998 1998-11-01
SMBTA 06M
DC current gain h FE = f(I C)
Collector-emitter saturation voltage
VCE = 1V
EHP00821
IC = f (VCEsat), h FE = 10
10 3
10 3
EHP00819
h FE
100 C 10 2 25 C
C mA
100 C 25 C -50 C
10 2 5
-50 C
10 1
10 1 5
10 0 -1 10
10
0
10
1
10
2
mA 10
3
10 0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
0.8
C
V CEsat
Collector cutoff current I CBO = f(TA)
Collector current I C = f (VBE)
VCB = V CEmax
EHP00820
VCE = 1V
EHP00815
10 4 nA
10 3 mA
CBO
10 3 5 10 2 5 10 1 5 10 5
0
max
C
10 2 5
100 C 25 C -50 C
10 1
typ
5
10 0 5
10 -1 0 50 100 C 150
10 -1 0 0.5 1.0 V 1.5
TA
V BE
Semiconductor Group Semiconductor Group
44
Jun-08-1998 1998-11-01

▲Up To Search▲

Price & Availability of SMBTA06M

	To Download SMBTA06M Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .