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| Final data SPW15N60C3 VDS @ Tjmax RDS(on) ID 650 0.28 15 P-TO247 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance V A Type SPW15N60C3 Package P-TO247 Ordering Code Q67040-S4604 Marking 15N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 7.5 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 15 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt IS=15A, VDS=480V, T j=125C Symbol ID Value 15 9.4 Unit A I D puls EAS 45 460 0.8 15 6 20 30 156 -55... +150 W C 2003-09-17 A V/ns V mJ Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature Page 1 VGS VGS Ptot T j , T stg Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 15 A, Tj = 125 C SPW15N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=15A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=675, VGS=VDS V DS=600V, VGS=0V, Tj=25C, Tj=150C Symbol min. RthJC RthJA Tsold - Values typ. max. 0.8 62 260 Unit K/W C Values typ. 700 3 0.1 0.25 0.68 1.23 max. 3.9 600 2.1 - Unit V A 1 100 100 0.28 nA Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=9.4A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2003-09-17 Final data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=480V, ID=15A, V GS=0 to 10V V DD=480V, ID=15A SPW15N60C3 Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=9.4A V GS=0V, V DS=25V, f=1MHz Values typ. 11.9 1660 540 40 80 127 10 5 50 5 max. 80 10 - Unit S pF Effective output capacitance, 2) Co(er) V GS=0V, V DS=0V to 480V pF td(on) tr td(off) tf V DD=380V, V GS=0/10V, ID=15A, RG =4.3 - ns - 7 29 63 5 - nC V(plateau) V DD=480V, ID=15A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-09-17 Final data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.012 0.023 0.043 0.156 0.178 0.072 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 Unit Symbol Value typ. VSD t rr Q rr I rrm di rr/dt VGS =0V, I F=IS VR =480V, IF=IS , diF/dt=100A/s SPW15N60C3 Symbol IS I SM Conditions min. TC=25C Values typ. 1 460 27 55 tbd max. 15 45 1.2 - Unit A V ns C A A/s Unit 0.0002495 0.0009406 0.001298 0.00362 0.009046 0.412 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2003-09-17 Final data 1 Power dissipation Ptot = f (TC) 170 SPW15N60C3 SPW15N60C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 2 W 140 A 10 1 120 Ptot 100 10 0 80 60 40 20 0 0 10 -2 0 10 10 -1 ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 C 160 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS Vgs = 20V Vgs = 7V A Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V 40 Vgs = 4V 60 K/W 10 0 ZthJC 10 -1 ID D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse -6 -5 -4 -3 30 10 -2 20 10 -3 10 10 -4 -7 10 10 10 10 10 s tp 10 -1 0 0 4 8 12 16 20 V 28 VDS Page 5 2003-09-17 Final data 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 30 SPW15N60C3 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 1.8 A RDS(on) ID 20 Vgs = 20V Vgs = 7V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V 1.4 Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 7V Vgs = 20V 1.2 15 1 10 0.8 5 0.6 0 0 4 8 12 16 20 V 28 0.4 0 5 10 15 20 A ID 30 VDS 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 9.4 A, VGS = 10 V 1.6 SPW15N60C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 60 1.2 A 25C RDS(on) 1 ID 40 150C 0.8 30 0.6 20 0.4 98% typ 0.2 10 0 -60 -20 20 60 100 C 180 0 0 2 4 6 V 10 Tj Page 6 VGS 2003-09-17 Final data 9 Typ. gate charge VGS = f (QGate ) parameter: ID = 15 A pulsed 16 V SPW15N60C3 SPW15N60C3 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPW15N60C3 A 12 VGS 0.8 VDS max 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 80 nC 10 -1 0 10 0.2 VDS max 10 1 4 2 0 0 10 20 30 40 50 60 70 100 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 15 12 Avalanche energy EAS = f (Tj) par.: ID = 7.5 A, V DD = 50 V 0.5 A mJ 9 EAS 4 IAR Tj(START)=25C 0.3 6 Tj(START)=125C 0.2 3 0.1 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR 0 20 40 60 80 100 120 160 C Tj Page 7 2003-09-17 Final data 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPW15N60C3 SPW15N60C3 14 Avalanche power losses PAR = f (f ) parameter: E AR=0.8mJ 900 V W V(BR)DSS 680 700 PAR 660 640 620 600 580 560 540 -60 600 500 400 300 200 100 04 10 -20 20 60 100 C 180 10 5 Hz f 10 6 Tj 15 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 16 Typ. Coss stored energy Eoss=f(VDS) 15 pF Ciss J 10 3 C Eoss Coss 9 10 2 6 10 1 Crss 3 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Page 8 2003-09-17 Final data SPW15N60C3 Definition of diodes switching characteristics Page 9 2003-09-17 Final data P-TO-247-3-1 15.9 6.35 o3.61 5.03 2.03 SPW15N60C3 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12 41.22 2.97 x 0.127 5 5.94 20 Page 10 2003-09-17 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPW15N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2003-09-17 |
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