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| DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BAV105 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification High-speed diode FEATURES * Small hermetically sealed glass SMD package * High switching speed: max. 6 ns * General application * Continuous reverse voltage: max. 60 V * Repetitive peak reverse voltage: max. 60 V * Repetitive peak forward current: max. 600 mA. APPLICATIONS * High-speed switching in e.g. surface mounted circuits. Cathode indicated by black band. MAM061 BAV105 DESCRIPTION The BAV105 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package. handbook, 4 columns k a Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 9 3 1 500 +200 200 A A A mW C C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 60 60 300 600 V V mA mA UNIT 1996 Sep 17 2 Philips Semiconductors Product specification High-speed diode ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 10 mA IF = 200 mA IF = 500 mA IF = 200 mA; Tj = 100 C IR reverse current see Fig.5 VR = 60 V VR = 60 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 400 mA to IR = 400 mA; RL = 100 ; measured at IR = 40 mA; see Fig.7 when switched from IF = 400 mA; tr1 = 30 ns; see Fig.8 when switched from IF = 400 mA; tr2 = 100 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS - - - - 100 100 - - - - 750 1000 950 CONDITIONS MIN. BAV105 MAX. UNIT mV mV mV nA A pF ns 1.25 V 2.5 6 Vfr forward recovery voltage - - 2 1.5 V V VALUE 300 350 UNIT K/W K/W 1996 Sep 17 3 Philips Semiconductors Product specification High-speed diode GRAPHICAL DATA BAV105 handbook, halfpage 400 MBG454 handbook, halfpage 600 MBG457 IF (mA) 300 IF (mA) 400 (1) (2) (3) 200 200 100 0 0 100 Tamb (oC) 200 0 0 (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG703 10 1 10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10 102 103 tp (s) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 4 Philips Semiconductors Product specification High-speed diode BAV105 103 handbook, halfpage IR (A) MGD011 MGD002 handbook, halfpage 4 102 Cd (pF) 3 10 (1) (2) (3) 2 1 10-1 1 10-2 0 100 Tj (oC) 200 0 0 10 20 VR (V) 30 (1) VR = 60 V; maximum values. (2) VR = 60 V; typical values. (3) VR = 30 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 17 5 Philips Semiconductors Product specification High-speed diode BAV105 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 40 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% V R = 50 S D.U.T. OSCILLOSCOPE R i = 50 10% MGA882 V fr t tr tp t input signal output signal Input signal: forward pulse duration tp = 300 ns; duty factor = 0.01. Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 17 6 Philips Semiconductors Product specification High-speed diode PACKAGE OUTLINE BAV105 handbook, full pagewidth 1.60 O 1.45 0.3 3.7 3.3 0.3 MBA390 - 2 Dimensions in mm. Fig.9 SOD80C. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 17 7 |
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