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Designer's and SWITCHMODE are trademarks of Motorola, Inc.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The BUH150 has an application specific state-of-art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the start-up conditions or under a short circuit across the load. This High voltage/High speed product exhibits the following main features: * Improved Efficiency Due to the Low Base Drive Requirements: -- High and Flat DC Current Gain hFE -- Fast Switching * Robustness Thanks to the Technology Developed to Manufacture this Device * Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
SWITCHMODE NPN Silicon Planar Power Transistor
Designer'sTM Data Sheet
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds
Thermal Resistance -- Junction to Case -- Junction to Ambient
Operating and Storage Temperature
*Total Device Dissipation @ TC = 25_C *Derate above 25C
Base Current -- Continuous Base Current -- Peak (1)
Collector Current -- Continuous -- Peak (1)
Emitter-Base Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Rating
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
VCES
RJC RJA
IC ICM
IB IBM
PD
TL
- 65 to 150
POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS
Value
0.85 62.5
260
150 1.2
700
700
400
BUH150
6 12
15 25
10
CASE 221A-06 TO-220AB
Order this document by BUH150/D
Watt W/_C
_C/W
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_C
_C
1
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BUH150
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
DYNAMIC CHARACTERISTICS DYNAMIC SATURATION VOLTAGE ON CHARACTERISTICS OFF CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) DC Current Gain (IC = 2 Adc, VCE = 1 Vdc) DC Current Gain (IC = 10 Adc, VCE = 5 Vdc) Dynamic Saturation Voltage: Determined 3 s after rising IB1 reaches 90% of final IB1 (see Figure 19) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) Collector Base Current (VCB = Rated VCBO, VEB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Input Capacitance (VEB = 8 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz) DC Current Gain (IC = 20 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 0.4 Adc) Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 20 Adc, IB = 4 Adc) (IC = 10 Adc, IB = 2 Adc) Characteristic IC = 10 Adc, IB1 = 2 Adc VCC = 300 V IC = 5 Adc, IB1 = 1 Adc VCC = 300 V @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C VCEO(sus) VCE(dsat) VCE(sat) VBE(sat) Symbol VCBO VEBO ICBO ICEO IEBO ICES Cob hFE Cib fT Min 700 400 4 2.5 10 10 12 14 8 6 1300 0.45 0.16 0.15 12.3 Typ 100 860 460 2.4 2.8 1.5 7 4.5 23 20 20 22 12 10 5 2 1 100 1000 100 1000 1750 1.25 Max 150 100 100 0.4 0.4 5 1 Adc Adc Adc Adc MHz Unit Vdc Vdc Vdc Vdc Vdc Vdc Vdc pF pF -- -- -- -- V V V V
2
Motorola Bipolar Power Transistor Device Data
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I I II I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s) Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Turn-off Time Fall Time Storage Time Turn-on Time Turn-off Time Fall Time Storage Time Turn-on Time IC = 5 Adc, IB1 = 0.5 Adc IB2 = 0.5 Adc VCC = 300 Vdc IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 300 Vdc IC = 2 Adc, IB1 = 0.2 Adc IB2 = 0.2 Adc VCC = 300 Vdc Characteristic IC = 10 Adc, IB1 = 2 Adc IB2 = 2 Adc VCC = 300 Vdc IC = 5 Adc IB1 = 0.5 Adc IB2 = 0.5 Adc IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc IC = 2 Adc IB1 = 0.2 Adc IB2 = 0.2 Adc IC = 10 Adc IB1 = 2 Adc IB2 = 2 Adc @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C Symbol ton ton ton ton toff toff toff toff tsi tsi tsi tsi tc tc tc tc ts ts tfi tfi tfi tfi tf tf Min 3.25 4.6 2.25 2.75 Typ 250 475 275 450 250 270 235 240 500 900 450 800 320 100 240 200 110 160 110 140 110 170 110 160 2.3 2.8 6.5 8 2.5 3.9 6.5 6.1 5.6 5.3 6 7.8 2.75 3.75 2.75 Max 350 175 350 150 350 250 350 250 700 650 500 200 350 300 7.5 7.5 6.5 8 3 8 7
Motorola Bipolar Power Transistor Device Data
BUH150
Unit
s
s
s
s
s
s
s
s
s
s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
BUH150
TYPICAL STATIC CHARACTERISTICS
100 VCE = 1 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C TJ = 125C 100 VCE = 3 V
10
TJ = - 20C
TJ = 25C
10
TJ = - 20C
TJ = 25C
1 0.001
0.01
0.1 1 10 IC, COLLECTOR CURRENT (AMPS)
100
1 0.001
0.1 1 10 0.01 IC, COLLECTOR CURRENT (AMPS)
100
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 3 Volt
100 VCE = 5 V hFE , DC CURRENT GAIN VCE , VOLTAGE (VOLTS) TJ = 125C
10 IC/IB = 5 TJ = 125C 1 TJ = 25C 0.1 TJ = - 20C
TJ = - 20C 10
TJ = 25C
1 0.01
0.1 1 10 IC, COLLECTOR CURRENT (AMPS)
100
0.01 0.001
0.01
10 0.1 1 IC, COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain @ 5 Volt
Figure 4. Collector-Emitter Saturation Voltage
10 IC/IB = 10 VCE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS)
1.5 IC/IB = 5
1 TJ = 125C 0.1 TJ = 25C 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 100
1 TJ = - 20C TJ = 25C TJ = 125C
0.5
0 0.001
10 0.01 1 0.1 IC, COLLECTOR CURRENT (AMPS)
100
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Region
4
Motorola Bipolar Power Transistor Device Data
BUH150
TYPICAL STATIC CHARACTERISTICS
1.5 IC/IB = 10 VBE , VOLTAGE (VOLTS) 1 TJ = - 20C TJ = 25C TJ = 125C VCE , VOLTAGE (VOLTS) 1.5 2 TJ = 25C
1 20 A 0.5 VCE(sat) (IC = 1 A) 5A 15 A 8A 10 A
0.5
0 0.001
0.01
10 0.1 1 IC, COLLECTOR CURRENT (AMPS)
100
0 0.01
0.1
1 IB, BASE CURRENT (A)
10
100
Figure 7. Base-Emitter Saturation Region
10000 TJ = 25C f(test) = 1 MHz BVCER (VOLTS) 900
Figure 8. Collector Saturation Region
TJ = 25C 800 BVCER @ 10 mA
C, CAPACITANCE (pF)
Cib (pF) 1000
700 BVCER(sus) @ 200 mA 600
100
Cob (pF)
500 400 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 10 100 RBE () 1000
10
Figure 9. Capacitance
Figure 10. Resistive Breakdown
Motorola Bipolar Power Transistor Device Data
5
BUH150
TYPICAL SWITCHING CHARACTERISTICS
2000 1800 1600 1400 t, TIME (ns) 1200 1000 800 600 400 200 0 0 3 9 12 6 IC, COLLECTOR CURRENT (AMPS) 15 25C IC/IB = 5 0 0 5 10 IC, COLLECTOR CURRENT (AMPS) 15 125C 125C IB1 = IB2 VCC = 300 V PW = 40 s IC/IB = 10 25C t, TIME ( s) 12 10 8 6 4 2 IC/IB = 10 IC/IB = 5 TJ = 25C TJ = 125C IB1 = IB2 VCC = 300 V PW = 20 s
Figure 11. Resistive Switching, ton
Figure 12. Resistive Switch Time, toff
8 7 6 t, TIME ( s) 5 4 3 2 1 0 1 3 5 9 11 7 IC, COLLECTOR CURRENT (AMPS) 13 15 TJ = 125C TJ = 25C IC/IB = 5 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H
8 7 6 t, TIME ( s) 5 4 3 2 1 0 1 4 7 IC, COLLECTOR CURRENT (AMPS) 10 TJ = 125C TJ = 25C IC/IB = 10 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H
Figure 13. Inductive Storage Time, tsi
Figure 13 Bis. Inductive Storage Time, tsi
550 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C
800 700 600 t, TIME (ns) tc 500 tc 400 300 200 tfi IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H TC = 125C TC = 25C
450
t, TIME (ns)
350
250
tfi
150 100 50 1 3 5 7 9 11 IC, COLLECTOR CURRENT (AMPS) 13 15 0 0 2 8 4 6 IC, COLLECTOR CURRENT (AMPS) 10
Figure 14. Inductive Storage Time, tc & tfi @ IC/IB = 5
Figure 15. Inductive Storage Time, tc & tfi @ IC/IB = 10
6
Motorola Bipolar Power Transistor Device Data
BUH150
TYPICAL SWITCHING CHARACTERISTICS
5 200 TJ = 125C TJ = 25C
4 tsi , STORAGE TIME (s)
IC = 5 A t fi , FALL TIME (ns)
150
3
100 IC = 5 A 50 IC = 10 A IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 H 5 6 7 hFE, FORCED GAIN 8 9 10
2 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 2 4
1
IC = 10 A 6 hFE, FORCED GAIN 8
0
TJ = 125C TJ = 25C 10
0 3 4
Figure 16. Inductive Storage Time
Figure 17. Inductive Fall Time
800 700 t c , CROSSOVER TIME (ns) 600 500 400 300 200 100 3 4 5 6 7 hFE, FORCED GAIN 8 9 10 IC = 5 A IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C
IC = 10 A
Figure 18. Inductive Crossover Time
Motorola Bipolar Power Transistor Device Data
7
BUH150
TYPICAL SWITCHING CHARACTERISTICS
10 VCE dyn 1 s dyn 3 s 0V 90% IB 1 s IB 3 s TIME 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp 10% Vclamp 10% IC tc IC tsi 90% IC tfi
Figure 19. Dynamic Saturation Voltage Measurements
Figure 20. Inductive Switching Measurements
Table 1. Inductive Load Switching Drive Circuit
+15 V 1 F 150 3W 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA IB2 Iout IB RB1 VCE IB1 IC PEAK
1 F -Voff
Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1
RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1
TYPICAL THERMAL RESPONSE
1 SECOND BREAKDOWN DERATING
POWER DERATING FACTOR
0.8
0.6 THERMAL DERATING 0.4
0.2 0 20 40 60 80 120 100 TC, CASE TEMPERATURE (C) 140 160
Figure 21. Forward Bias Power Derating 8 Motorola Bipolar Power Transistor Device Data
BUH150
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based on T C = 25C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21. TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 1 s 10 DC 1 10 s 5 ms 1 ms EXTENDED SOA
16 14 12 10 8 6 4 2 0 300 0V -1.5 V -5 V GAIN 5 TC 125C LC = 4 mH
0.1
0.01 1 100 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000
400 500 600 700 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
800
Figure 22. Forward Bias Safe Operating Area
Figure 23. Reverse Bias Safe Operating Area
TYPICAL THERMAL RESPONSE
1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5
0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) t2 DUTY CYCLE, D = t1/t2 10 t1 P(pk) RJC(t) = r(t) RJC RJC = 0.83C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000
Figure 24. Typical Thermal Response (ZJC(t)) for BUH150
Motorola Bipolar Power Transistor Device Data
9
BUH150
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 221A-06 TO-220AB ISSUE Y
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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10
Motorola Bipolar Power Transistor Device Data
*BUH150/D*
BUH150/D

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