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| BUP 309 IGBT Preliminary data * High switching speed * Low tail current * Latch-up free * Avalanche rated * Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Pin 1 G Type BUP 309 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V Pin 2 C Ordering Code Q67078-A4204-A2 Pin 3 E VCE IC Package TO-218 AB 1700V 25A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 25 16 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 50 32 TC = 25 C TC = 90 C Avalanche energy, single pulse EAS 23 mJ IC = 15 A, VCC = 50 V, RGE = 25 L = 200 H, Tj = 25 C Power dissipation Ptot 310 W -55 ... + 150 -55 ... + 150 Jul-30-1996 C TC = 25 C Chip or operating temperature Storage temperature Semiconductor Group Tj Tstg 1 BUP 309 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC 0.4 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 3.5 4.5 1 6.5 4.2 - V VGE = VCE, IC = 1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 C VGE = 15 V, IC = 15 A, Tj = 125 C VGE = 15 V, IC = 15 A, Tj = 150 C Zero gate voltage collector current ICES 250 1000 A VCE = 1700 V, VGE = 0 V, Tj = 25 C VCE = 1700 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 100 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 2000 160 65 - S pF 2700 240 100 VCE = 20 V, IC = 15 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-30-1996 BUP 309 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit ns - VCC = 1200 V, VGE = 15 V, IC = 15 A RGon = 33 Rise time - tr - VCC = 1200 V, VGE = 15 V, IC = 15 A RGon = 33 Turn-off delay time td(off) 150 230 VCC = 1200 V, VGE = -15 V, IC = 15 A RGoff = 33 Fall time tf 50 80 VCC = 1200 V, VGE = -15 V, IC = 15 A RGoff = 33 Semiconductor Group 3 Jul-30-1996 BUP 309 Power dissipation Ptot = (TC) parameter: Tj 150 C 320 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 26 A W 22 Ptot 240 IC 20 18 200 16 14 160 12 120 10 8 80 6 4 2 0 0 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 40 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 t = 3.4s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A K/W 10 s IC 10 1 ZthJC 10 -1 100 s 1 ms D = 0.50 0.20 10 0 10 ms 10 -2 0.10 0.05 single pulse 0.02 0.01 DC 10 -1 10 0 10 1 10 2 10 3 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Jul-30-1996 BUP 309 Package Outlines Dimensions in mm Weight: 8 g Semiconductor Group 5 Jul-30-1996 |
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