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Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * Reverse surge capability * High thermal cycling performance * Isolated mounting tab
BYV32F, BYV32EX series
SYMBOL
QUICK REFERENCE DATA VR = 150 V/ 200 V
a1 1 k2
a2 3
VF 0.85 V IO(AV) = 12 A IRRM = 0.2 A trr 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32F series is supplied in the SOT186 package. The BYV32EX series is supplied in the SOT186A package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated
SOT186
case
SOT186A
case
123
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage square wave = 0.5; Ths 95 C t = 25 s; = 0.5; Ths 95 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV32F / BYV32EX -40 MIN. -150 150 150 150 12 20 125 137 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A C C
IRRM IRSM Tstg Tj
1 Neglecting switching and reverse current losses October 1998 1 Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k
BYV32F, BYV32EX series
MIN. -
MAX. 8
UNIT kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink Repetitive peak voltage from all three terminals to external heatsink Capacitance from pin 2 to external heatsink CONDITIONS SOT186A package; f = 50-60 Hz; sinusoidal waveform; R.H. 65%; clean and dustfree SOT186 package; R.H. 65%; clean and dustfree f = 1 MHz MIN. TYP. MAX. 2500 UNIT V
Visol
-
1500
V
Cisol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink (per diode) Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.0 7.0 UNIT K/W K/W K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr1 trr2 Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150C IF = 20 A VR = VRWM; Tj = 100 C VR = VRWM IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; VR 30 V; -dIF/dt = 50 A/s; Tj = 100C IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 0.72 1.00 0.2 6 8 20 10 1.5 1 MAX. 0.85 1.15 0.6 30 12.5 25 20 2 UNIT V V mA A nC ns ns A V
October 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV32F, BYV32EX series
I
dI F dt
F
0.5A IF
t
rr time
0A I rec = 0.25A IR trr2
Q I R I
s
10%
100%
rrm
I = 1A R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
I
F
15
PF / W
Vo = 0.7 V Rs = 0.0183 Ohms
BYV32
Ths(max) / C D = 1.0
75
10
0.5 0.2 0.1
100
time VF V VF time fr
5
I
tp
D=
tp T t
125
T
0
0
5
IF(AV) / A
10
150 15
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
PF / W
Vo = 0.7 V Rs = 0.0183 Ohms
R
10
BYV32 1.9 2.2
Ths(max) / C a = 1.57
100
8
2.8 4
110
D.U.T. Voltage Pulse Source
6
120
4
130
Current shunt
to 'scope
2
140
0
0
2
4
IF(AV) / A
6
8
150 10
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
October 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV32F, BYV32EX series
trr / ns 1000
100 Qs / nC
100
IF=10A
IF=10A 5A 2A 1A 10
IF=1A 10
1
1.0
1 10 dIF/dt (A/us) 100
1.0
10 -dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 C; per diode
Fig.10. Maximum Qs at Tj = 25 C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-hs (K/W)
IF=10A 1 IF=1A
1
0.1
0.1
0.01
P D tp D= tp T t
0.01 1 10 -dIF/dt (A/us) 100
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYV32F/EX
Fig.8. Maximum Irrm at Tj = 25 C; per diode
Fig.11. Transient thermal impedance; per diode; Zth j-hs = f(tp).
30
IF / A Tj=150 C Tj=25 C
20
10
typ max
0 0
0.5
VF / V
1
1.5
Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj
October 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BYV32F, BYV32EX series
10.2 max 5.7 max 3.2 3.0
0.9 0.5
4.4 max 2.9 max 4.4 4.0
7.9 7.5 17 max
seating plane
3.5 max not tinned
4.4
13.5 min 1 0.4 M 2 3 0.9 0.7 2.54 5.08 top view 1.3
0.55 max
Fig.12. SOT186; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0
BYV32F, BYV32EX series
4.6 max 2.9 max
Recesses (2x) 2.5 0.8 max. depth
2.8 6.4 15.8 19 max. max. seating plane 15.8 max
3 max. not tinned 3 2.5 13.5 min. 1 0.4
M
2
3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7
5.08
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
October 1998
6
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYV32F, BYV32EX series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1998
7
Rev 1.300

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