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| FDD6612A/FDU6612A February 2004 FDD6612A/FDU6612A 30V N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Features * 30 A, 30 V RDS(ON) = 20 m @ VGS = 10 V RDS(ON) = 28 m @ VGS = 4.5 V * Low gate charge * Fast Switching * High performance trench technology for extremely low RDS(ON) Applications * DC/DC converter * Motor Drives D D G S I-PAK (TO-251AA) GDS G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol VDSS VGSS ID TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25C @TA=25C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 1) (Note 1a) (Note 1b) Ratings 30 20 30 9.5 60 36 2.8 1.3 -55 to +175 Units V V A PD Power Dissipation @TC=25C @TA=25C @TA=25C W TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 3.9 45 96 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD6612A FDU6612A Device FDD6612A FDU6612A Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75 (c)2004 Fairchild Semiconductor Corporation FDD6612A/FDU6612A Rev E(W) FDD6612A/FDU6612A Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 27 V, ID=10 A Min Typ Max Units 51 10 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) VGS = 0 V, ID = 250 A 30 25 1 100 V mV/C A nA ID = 250 A,Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 5 V, ID = 9.5 A ID = 8 A ID = 9.5 A, TJ=125C ID = 9.5 A 1 2.0 -5.1 15 20 23 28 3 V mV/C 20 28 33 m gFS S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) 660 VDS = 15 V, f = 1.0 MHz VGS = 15 Mv, V GS = 0 V, 170 90 f = 1.0 MHz 2.3 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 9 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 5 24 4 6.7 VDS = 15 V, VGS = 5 V ID = 9.5 A, 2.1 2.7 18 10 38 8 9.4 ns ns ns ns nC nC nC FDD6612A/FDU6612A Rev. E(W) FDD6612A/FDU6612A Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 2.3 A V nS nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 9.5 A, IS = 2.3 A (Note 2) 0.8 20 10 1.2 diF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 45C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6612A/FDU6612A Rev. E(W) FDD6612A/FDU6612A Typical Characteristics 60 4.5V 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 5.0V VGS = 3.5V 50 ID, DRAIN CURRENT (A) 6.0V 40 1.8 1.6 4.0V 4.0V 30 1.4 4.5V 5.0V 6.0V 20 3.5V 1.2 10 3.0V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 1 10V 0.8 0 10 20 ID, DRAIN CURRENT (A) 30 40 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.06 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 9.5A VGS = 10V ID = 5 A RDS(ON), ON-RESISTANCE (OHM) 0.05 1.6 1.4 0.04 1.2 0.03 1 TA = 125oC 0.8 0.02 TA = 25oC 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0.01 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation withTemperature 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) VGS = 0V 10 TA = 125oC 25oC -55oC 40 1 30 0.1 20 0.01 TA = 125 C 10 o 25oC -55oC 0.001 0 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 5 5.5 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6612A/FDU6612A Rev. E(W) FDD6612A/FDU6612A Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 9.5A VDS = 10V 8 CAPACITANCE (pF) 20V 1000 f = 1 MHz VGS = 0 V 800 Ciss 600 6 15V 4 400 Coss 200 2 Crss 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 12 14 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 100 100s 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE o RJA = 96 C/W TA = 25oC Figure 8. Capacitance Characteristics 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 40 SINGLE PULSE o RJA = 96 C/W TA = 25oC ID, DRAIN CURRENT (A) 10 30 1 20 0.1 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 96 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6612A/FDU6612A Rev. E(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11 |
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