View FDV302_57880.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

October 1997
FDV302P Digital FET, P-Channel
General Description
This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.
Features
-25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 @ VGS= -2.7 V RDS(ON) = 10 @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET.
SOT-23 Mark:302
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
TA = 25oC unless otherwise noted FDV302P -25 -8 Units V V A
- Continuous - Pulsed
-0.12 -0.5 0.35 -55 to 150 6.0
Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)
W C kV
THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient 357 C/W
(c) 1997 Fairchild Semiconductor Corporation
FDV302P REV. F
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25 o C VDS = -20 V, VGS = 0 V TJ = 55C IGSS Gate - Body Leakage Current
(Note)
-25 -20 -1 -10 -100
V mV / oC A A nA mV / oC -1.5 13 10 18 A 0.135 S V
BVDSS/TJ
IDSS
VGS = -8 V, VDS= 0 V ID = -250 A, Referenced to 25 oC VDS = VGS, ID = -250 A VGS = -2.7 V, ID = -0.05 A VGS = -4.5 V, ID = -0.2 A TJ =125C -0.65 1.9 -1 10.6 7.9 12 -0.05
ON CHARACTERISTICS
VGS(th)/TJ
VGS(th) RDS(ON)
Gate Threshold Voltage Temp. Coefficient Gate Threshold Voltage Static Drain-Source On-Resistance
ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
On-State Drain Current Forward Transconductance
VGS = -2.7 V, VDS = -5 V VDS = -5 V, ID= -0.2 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note)
11 7 1.4
pF pF pF
SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -6 V, ID = -0.2 A, VGS = -4.5 V, RGEN = 50
5 8 9 5
12 16 18 10 0.31
ns ns ns ns nC nC nC
VDS = -5 V, ID = -0.2 A, VGS = -4.5 V
0.22 0.11 0.04
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.2 A
(Note)
-0.2 -1 -1.5
A V
Note: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDV302P REV. F
Typical Electrical Characteristics
0.2 2 DRAIN-SOURCE ON-RESISTANCE
-I D , DRAIN-SOURCE CURRENT (A)
V GS = -5.0V -4.5
0.15
-4.0 -3.5
RDS(ON), NORMALIZED
-3.0 -2.7
V GS = -2.0 V
1.5
-2.5 -2.7 -3.0
0.1
-2.5
1
0.05
-2.0
-4.0 -3.5 -4.5
0
0
1
2
3
4
0.5
0
0.05
0.1 -I D , DRAIN CURRENT (A)
0.15
0.2
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
R DS(ON) ,ON-RESISTANCE (OHM)
1.6
R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
25
I D = -0.05A
1.4
TA= 25C
20
ID = -0.05A 125 C
V GS = -2.7V
1.2
15
1
10
0.8
5
0.6 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
0
0
1 -V
2
GS
3
4
5
6
7
8
,GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On Resistance Variation with Gate-To- Source Voltage.
0.08
25C
-ID , DRAIN CURRENT (A) 0.06
-I S , REVERSE DRAIN CURRENT (A)
V DS = -5V
TA = -55C
125C
0.5
VGS = 0V
0.1
TJ = 125C 25C
0.04
0.01
-55C
0.001
0.02
0 0.5
1 -V
GS
1.5
2
2.5
3
, GATE TO SOURCE VOLTAGE (V)
0.0001 0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDV302P REV. F
Typical Electrical And Thermal Characteristics
8 -V GS , GATE-SOURCE VOLTAGE (V)
25
I D = -0.2A
6
VDS = -5V -15
-10
CAPACITANCE (pF)
15 10
C iss Coss
4
5 3 2
2
f = 1 MHz V GS = 0 V
0.3 1 2 5
0 0 0.1 0.2 0.3 0.4 0.5 Q g , GATE CHARGE (nC)
Crss
10 15 25
1 0.1
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1 0.5
L N) IM IT
5
-ID , DRAIN CURRENT (A)
1m
S(O
10 0m s
s
POWER (W)
4
0.2 0.1 0.05
SINGLE PULSE R JA =357 C/W TA = 25C
RD
1s
10 s
3
2
0.02 0.01
VGS = -2.7V SINGLE PULSE RJA = 357 C/W TA = 25C
1 2 5
DC
1
0 0.001
0.01
0.1
1
10
100
300
10
15
20
30
40
SINGLE PULSE TIME (SEC)
- VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R JA (t) = r(t) * R JA R JA = 357 C/W
t1 TJ - T
t2
= P * R JA (t) Duty Cycle, D = t1 /t 2
A
100
300
Figure 11. Transient Thermal Response Curve.
FDV302P REV. F

▲Up To Search▲

Price & Availability of FDV302

	To Download FDV302 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .