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| MITSUBISHI Nch POWER MOSFET FS3UM-16A HIGH-SPEED SWITCHING USE FS3UM-16A OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 qwe wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS ............................................................................... 800V rDS (ON) (MAX) ................................................................ 3.3 ID ........................................................................................... 3A TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 800 30 3 9 100 -55 ~ +150 -55 ~ +150 2 Unit V V A A W C C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS3UM-16A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 800V, VGS = 0V ID = 1mA, VDS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 800 30 -- -- 2 -- -- 2.1 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 2.53 3.80 3.5 770 77 13 15 15 90 25 1.0 -- Max. -- -- 10 1 4 3.30 4.95 -- -- -- -- -- -- -- -- 1.5 1.25 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 1.5A, VGS = 10V, RGEN = RGS = 50 IS = 1.5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 POWER DISSIPATION PD (W) 80 DRAIN CURRENT ID (A) 100ms 1ms 60 10ms 100ms DC TC = 25C Single Pulse 40 20 0 0 50 100 150 200 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 10 TC = 25C Pulse Test VGS = 20V 10V 2.0 VGS = 20V 10V 5V TC = 25C Pulse Test DRAIN CURRENT ID (A) 8 DRAIN CURRENT ID (A) 1.6 6 PD = 100W 1.2 4.5V 4 5V 0.8 2 4V 0.4 4V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3UM-16A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 TC = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 TC = 25C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 32 8 24 ID = 6A 6 VGS = 10V 16 3A 1A 4 20V 8 2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 10 TC = 25C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 VDS = 10V Pulse Test TC = 25C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 8 3 2 100 7 5 3 2 75C 125C 6 4 2 0 0 4 8 12 16 20 10-1 -1 10 23 5 7 100 23 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -1 10 SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 td(off) tf td(on) tr CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 3 2 102 7 5 3 2 Ciss Coss Tch = 25C Crss 101 f = 1MHZ 7 VGS = 0V 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 SWITCHING TIME (ns) 2 3 4 5 7 100 2 3 4 5 7 101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3UM-16A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 20 Tch = 25C ID = 3A 16 SOURCE CURRENT IS (A) 8 TC = 125C 12 VDS = 250V 6 75C 25C 8 400V 4 4 600V 2 0 0 10 20 30 40 50 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 1.2 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 1.0 0.8 PDM 0.6 0.4 -50 0 50 100 150 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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