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MC74VHC573 Octal D-Type Latch with 3-State Output The MC74VHC573 is an advanced high speed CMOS octal latch with 3-state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. This 8-bit D-type latch is controlled by a latch enable input and an output enable input. When the output enable input is high, the eight outputs are in a high impedance state. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems. http://onsemi.com MARKING DIAGRAMS 20 20 1 SOIC-20 WIDE DW SUFFIX CASE 751D 1 TSSOP-20 DT SUFFIX CASE 948E VHC573 AWLYYWW 20 VHC 573 ALYW 1 20 * * * * * * * * * * * High Speed: tPD = 4.5ns (Typ) at VCC = 5V Low Power Dissipation: ICC = 4A (Max) at TA = 25C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2V to 5.5V Operating Range Low Noise: VOLP = 1.2V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300mA ESD Performance: HBM > 2000V; Machine Model > 200V Chip Complexity: 218 FETs or 54.5 Equivalent Gates LOGIC DIAGRAM 20 1 20 1 SOIC EIAJ M SUFFIX CASE 967 A WL YY WW VHC573 AWLYYWW 1 = Assembly Location = Wafer Lot = Year = Work Week PIN ASSIGNMENT OE D0 D1 D2 DATA INPUTS D3 D4 D5 D6 D7 LE OE 2 3 4 5 6 7 8 9 11 1 19 18 17 16 15 14 13 12 Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 NONINVERTING OUTPUTS D0 D1 D2 D3 D4 D5 D6 D7 GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VCC Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 LE FUNCTION TABLE INPUTS OE L L L H LE H H L X D H L X X OUTPUT Q H L No Change Z ORDERING INFORMATION Device MC74VHC573DW MC74VHC573DWR2 MC74VHC573DT MC74VHC573DTR2 MC74VHC573M MC74VHC573MEL Package SOIC-WIDE SOIC-WIDE TSSOP-20 TSSOP-20 SOIC EIAJ SOIC EIAJ Shipping 38 / Rail 1000 / Reel 75 / Rail 2500 / Reel 40 / Rail 2000 / Reel (c) Semiconductor Components Industries, LLC, 2000 1 April, 2000 - Rev. 3 Publication Order Number: MC74VHC573/D II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I I II II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I I II II I I I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I I II II I I I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I I II II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I I II II I I I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I I II II I I I I I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII I I I II I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I * Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute-maximum-rated conditions is not implied. Derating -- SOIC Packages: - 7 mW/_C from 65_ to 125_C TSSOP Package: - 6.1 mW/_C from 65_ to 125_C II I III I II II I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I III II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII II I III II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS* SymbolIIIIIIIIIIIIII Parameter VCC Vout Tstg ICC IOK Iout Vin PD IIK Storage Temperature Power Dissipation in Still Air, DC Supply Current, VCC and GND Pins DC Output Current, per Pin Output Diode Current Input Diode Current DC Output Voltage DC Input Voltage DC Supply Voltage SOIC Packages TSSOP Package DC ELECTRICAL CHARACTERISTICS RECOMMENDED OPERATING CONDITIONS Symbol Symbol VOH VOL VIH VCC Vout VIL tr, tf Iin Vin TA Maximum Input Leakage Current Maximum Low-Level Output Voltage Minimum High-Level Output Voltage Maximum Low-Level Input Voltage Minimum High-Level Input Voltage Input Rise and Fall Time Operating Temperature DC Output Voltage DC Input Voltage DC Supply Voltage Parameter Parameter Vin = VIH or VIL IOL = 50A Vin = VIH or VIL IOH = - 50A Vin = 5.5 V or GND Vin = VIH or VIL IOL = 4mA IOL = 8mA Vin = VIH or VIL IOH = - 4mA IOH = - 8mA Test Conditions VCC = 3.3V VCC = 5.0V http://onsemi.com MC74VHC573 0 to 5.5 2.0 3.0 to 5.5 2.0 3.0 to 5.5 VCC V 3.0 4.5 2.0 3.0 4.5 3.0 4.5 2.0 3.0 4.5 - 0.5 to VCC + 0.5 2 - 65 to + 150 - 0.5 to + 7.0III V - 0.5 to + 7.0III V - 40 Min 1.50 VCC x 0.7 2.0 Value 0 0 0 0 - 20 75 25 20 500 450 2.58 3.94 Min 1.9 2.9 4.4 VCC + 85 Max 100 20 5.5 5.5 TA = 25C Typ 0.0 0.0 0.0 2.0 3.0 4.5 ns/V Unit Unit mW mA mA mA mA _C _C V V V V 0.50 VCC x 0.3 0.1 0.36 0.36 Max 0.1 0.1 0.1 This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. 1.50 VCC x 0.7 TA = - 40 to 85C 2.48 3.80 Min 1.9 2.9 4.4 v 0.50 VCC x 0.3 1.0 0.44 0.44 Max 0.1 0.1 0.1 v Unit A V V V V II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I II II I I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I II II I II II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I II II I II II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I II II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I II II I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I I I I I II I I I I I I I I I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II I I I I I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) DC ELECTRICAL CHARACTERISTICS SymbolIIIIIIII Parameter Symbol tOSLH, tOSHL tPLH, tPHL tPLH, tPHL tPLZ, tPHZ tPZL, tPZH CPD Cout ICC IOZ Cin Power Dissipation Capacitance (Note 2.) Maximum Three-State Output Capacitance (Output in High-Impedance State) Maximum Input Capacitance Output to Output Skew Output Disable Time, OE to Q Output Enable Time, OE to Q Maximum Propagation Delay, D to Q Maximum Propagation Delay, LE to Q Maximum Quiescent Supply Current Maximum Three-State Leakage Current Parameter Vin = VIL or VIH Vout = VCC or GND Vin = VCC or GND Test Conditions VCC = 5.5 0.5V (Note 1.) VCC = 3.3 0.3V (Note 1.) VCC = 5.0 0.5V RL = 1k VCC = 3.3 0.3V RL = 1k VCC = 5.0 0.5V RL = 1k VCC = 3.3 0.3V RL = 1k VCC = 5.0 0.5V VCC = 3.3 0.3V VCC = 5.0 0.5V VCC = 3.3 0.3V Test Conditions 1. Parameter guaranteed by design. tOSLH = |tPLHm - tPLHn|, tOSHL = |tPHLm - tPHLn|. 2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 8 (per latch). CPD is used to determine the no-load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50 pF, VCC = 5.0V) Symbol VOLP VOLV VIHD VILD Maximum Low Level Dynamic Input Voltage Minimum High Level Dynamic Input Voltage Quiet Output Minimum Dynamic VOL Quiet Output Maximum Dynamic VOL Parameter http://onsemi.com MC74VHC573 VCC V 5.5 5.5 CL = 50pF CL = 50pF CL = 50pF CL = 50pF CL = 15pF CL = 50pF CL = 15pF CL = 50pF CL = 15pF CL = 50pF CL = 15pF CL = 50pF CL = 15pF CL = 50pF CL = 15pF CL = 50pF 3 Min Min TA = 25C Typ TA = 25C 7.6 10.1 10.7 Typ 6.7 5.2 6.7 7.3 9.8 4.5 6.0 7.0 9.5 5.0 6.5 6 4 Typical @ 25C, VCC = 5.0V 0.25 Max 4.0 14.5 Max 11.5 15.0 11.0 14.5 11.9 15.4 1.0 1.5 9.7 7.7 9.7 6.8 8.8 7.7 9.7 10 - 0.9 Typ 0.9 29 TA = - 40 to 85C TA = 25C Min TA = - 40 to 85C Min 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 - 1.2 Max 1.5 3.5 1.2 2.5 Max 40.0 8.0 10.0 16.5 13.5 17.0 13.0 16.5 14.0 17.5 Max 11.0 9.0 11.0 9.0 11.0 1.0 1.5 10 Unit pF Unit V V V V Unit A A pF pF ns ns ns ns ns ns MC74VHC573 TIMING REQUIREMENTS (Input tr = tf = 3.0ns) TA = 25C Symbol tw(h) tsu th Parameter Minimum Pulse Width, LE Minimum Setup Time, D to LE Minimum Hold Time, D to LE Test Conditions VCC = 3.3 0.3V VCC = 5.0 0.5V VCC = 3.3 0.3V VCC = 5.0 0.5V VCC = 3.3 0.3V VCC = 5.0 0.5V Typ Limit 5.0 5.0 3.5 3.5 1.5 1.5 TA = - 40 to 85C Limit 5.0 5.0 3.5 3.5 1.5 1.5 Unit ns ns ns SWITCHING WAVEFORMS VCC D tPLH Q 50% VCC 50% GND tPHL tw LE 50% VCC GND tPLH Q 50% VCC tPHL Figure 1. Figure 2. OE VCC 50% GND tPZL Q 50% VCC tPZH Q 50% VCC tPHZ VOL -0.3V HIGH IMPEDANCE tPLZ HIGH IMPEDANCE VOL +0.3V LE D 50% tsu th VCC 50% GND VALID VCC GND Figure 3. Figure 4. http://onsemi.com 4 MC74VHC573 TEST CIRCUITS TEST POINT OUTPUT DEVICE UNDER TEST DEVICE UNDER TEST TEST POINT OUTPUT CL* 1 k CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. CL* *Includes all probe and jig capacitance *Includes all probe and jig capacitance Figure 5. Figure 6. EXPANDED LOGIC DIAGRAM D0 2 D Q LE D Q LE D Q LE D Q LE D Q LE D Q LE D Q LE D Q LE 11 19 Q0 D1 3 18 Q1 D2 4 17 Q2 D3 5 16 Q3 D4 6 15 Q4 D5 7 14 Q5 D6 8 13 Q6 D7 9 12 Q7 LE OE 1 INPUT Figure 7. Input Equivalent Circuit http://onsemi.com 5 MC74VHC573 PACKAGE DIMENSIONS TSSOP-20 DT SUFFIX CASE 948E-02 ISSUE A M 20X K REF TU 0.15 (0.006) T U S 0.10 (0.004) S V S 2X L/2 20 11 L PIN 1 IDENT 1 10 B -U- J J1 N 0.15 (0.006) T U S A -V- N F C D 0.100 (0.004) -T- SEATING PLANE G H SO-20 DW SUFFIX CASE 751D-05 ISSUE F D A 11 X 45 _ H M B M 20 10X 0.25 E 1 10 h 20X B 0.25 M B TA S B S A SEATING PLANE L 18X e A1 T http://onsemi.com 6 IIII IIII IIII SECTION N-N 0.25 (0.010) M DETAIL E DETAIL E K K1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 --- 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.252 0.260 0.169 0.177 --- 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ -W- DIM A B C D F G H J J1 K K1 L M q NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_ DIM A A1 B C D E e H h L q C MC74VHC573 PACKAGE DIMENSIONS SOIC EIAJ M SUFFIX CASE 967-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). DIM A A1 b c D E e HE L LE M Q1 Z MILLIMETERS MIN MAX --- 2.05 0.05 0.20 0.35 0.50 0.18 0.27 12.35 12.80 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 --- 0.81 INCHES MIN MAX --- 0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.486 0.504 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 --- 0.032 20 11 LE Q1 M_ L DETAIL P E HE 1 10 Z D e VIEW P A c b 0.13 (0.005) M A1 0.10 (0.004) http://onsemi.com 7 MC74VHC573 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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