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| LESHAN RADIO COMPANY, LTD. Silicon Pin Diode This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. MMBV3401LT1 SILICON PIN SWITCHING DIODE * Rugged Pin Structure Coupled with Wirebond Construction for Optimum Reliability * Low Capacitance--0.7pF Typ at VR=20Vdc * Very Low Series Resistance at 100MHz--0.34Ohms(Typ)@IF=10mAdc 3 3 CATHODE 1 ANODE 1 2 CASE 318-08, STYLE 6 SOT- 23 (TO-236AB) MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward power Dissipation @T A = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR PD TJ T stg Value 20 200 2.0 +125 -55 to +150 Unit Vdc mW mW/C C C DEVICE MARKING MMBV3401LT1=4D ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=10Adc) Diode Capacitance (VR=20 Vdc) Series Resistance(figure5) (IF=10mAdc,f=100MHz) Reverse Voltage Leakage Current (V R=15Vdc) Symbol V (BR)R CT RS I R Min 35 -- -- -- Typ -- -- -- -- Max -- 1.0 0.7 0.1 Unit Vdc pF Adc MMBV3401LT1-1/2 LESHAN RADIO COMPANY, LTD. MMBV3401LT1 TYPICAL CHARACTERISTICS R S , SERIES RESISTANCE ( OHMS) 1.6 1.4 1.2 50 I F , FORWARD CURRENT ( mA ) 40 T A = 25C 1.0 0.8 0.6 0.4 0.2 0 0 2.0 4.0 6.0 8.0 10 12 14 16 30 T A = 25C 20 10 0 0.5 0.6 0.7 0.8 0.9 1.0 I F , FORWARD CURRENT ( mA ) V F , FORWARD VOLTAGE ( VOLTS ) Figure 1. Series Resistance Figure 2. Forward Voltage 20 100 40 C T , DIODE CAPACITANDE ( pF ) 10 7.0 5.0 I R, REVERSE CURRENT (A) 10 4.0 1.0 0.4 0.1 0.04 0.01 0.004 0.001 - 60 - 20 0 +20 +60 +100 +140 T A = 25C V R= 25Vdc 2.0 1.0 0.7 0.5 0.2 +3.0 0 -3.0 -6.0 -9.0 -12 -15 -18 -21 -24 -17 V R , FORWARD VOLTAGE ( VOLTS ) T A , AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance Figure 4. Leakage Current MMBV3401LT1-2/2 |
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