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Advanced Power MOSFET s s s ! "#$%&% s $'%# s ()*%# # s ! "#!+#,-./01 21 s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rain Current [A] -ID , Drain Current [A] 10 0 10 0 1 -1 0 1 -1 0 1 0 oC 5 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =-0V . DS 5 us et 3 2 0 s P l e T s .5 1 -2 -1 0 1 0 @Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 10 0 11 0 1 -2 0 2 4 6 8 1 0 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] % & ! 1 5 "!!#$# -IDR , Reverse Drain Current [A] Drain-Source On-Resistance 1 2 V =-0V 1 GS 10 0 RDS(on) , [ ] 9 6 V =-0V 2 GS 3 @Nt :T =2 C oe J 5 0 0 1 2 3 4 5 6 o 1 -1 0 @Nts: oe 1 V =0V . GS us et 2 2 0 s P l e T s .5 1 0 oC 5 2 oC 5 1 -2 0 02 04 06 08 10 12 14 16 18 20 22 24 26 . . . . . . . . . . . . . -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] ! 80 0 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 60 0 -VGS , Gate-Source Voltage [V] 1 0 V =-0V 8 DS V =-0 V 20 DS V =-2 V 30 DS Capacitance [pF] C iss 40 0 C oss C rss 20 0 @Nts: oe 1 V =0V . GS 2 f=1Mz . H 5 @Nts:I =-. A oe 15 D 0 0 5 1 0 1 5 2 0 00 1 0 11 0 -VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] '()#$ * 12 . 25 . P-CHANNEL POWER MOSFET + & * BVDSS , (Normalized) Drain-Source Breakdown Voltage RDS(on) , (Normalized) Drain-Source On-Resistance 20 . 11 . 15 . 10 . 10 . @Nts: oe 1 V =-0V . GS 1 2 I =-.5A . D 07 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 09 . @Nts: oe 1 V =0V . GS 2 I = - 5 A . D 20 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 05 . 08 . -5 7 00 . -5 7 TJ , Junction Temperature [oC] TJ , Junction Temperature [oC] /-. 0 Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y 1 0 s 0 1m s 10 0 D C 1m 0s ,-.! * 20 . -ID , Drain Current [A] -ID , Drain Current [A] 13 0 11 0 15 . 10 . 1 -1 0 @Nts: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Snl Ple . ige us 05 . 1 -2 0 11 0 12 0 00 . 2 5 5 0 7 5 10 0 15 2 10 5 -VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] *& Thermal Response D=0.5 10 0 0.2 0.1 0.05 @ Notes : 1. Z J C (t)=3.5 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t) PDM Z (t) , 10- 1 0.02 0.01 single pulse JC t1 t2 10- 5 10- 4 10- 3 10- 2 10- 1 100 101 t1 , Square Wave Pulse Duration [sec] P-CHANNEL POWER MOSFET 12* ! "!#$ % %&$ 12* "3*#4#$ 12* 5)!#&6 #7# 12* P-CHANNEL POWER MOSFET & ' ! #$ !%& " '''''''''''''''''''''''''' #$ !$ ! TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. F1 |
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