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| UMZ6.8N Diodes Zener Diode UMZ6.8N !Applications Constant voltage control For the ESD measure of a signal line !External dimensions (Units: mm) 2.00.2 1.30.1 0.65 0.65 0.90.1 0.3 0.6 0.30.1 0.150.05 (All pins have the same dimensions) !Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 !Circuit !Absolute maximum ratings (Ta=25C) Parameter Power dissipation Symbol P Limits 200 150 -55~+150 Unit mW C C Junction temperature Storage temperature Tj Tstg Total of 2 elements !Electrical characteristics (Ta=25C) Parameter Zener voltage Reverse current Operating resistance Capacitance between terminals Symbol VZ IR ZZ CT Min. 6.47 - - - Typ. - - - 9 Max. 7.14 0.5 40 - Unit V A pF IZ=5mA VR=3.5V IZ=5mA f=1MHZ, VR=5V Conditions 0.1Min. 6C !Features 1) Small surface mounting type (UMD3) 2) Composite type with two cathode common elements 3) High reliability 1.250.1 2.10.1 0~0.1 UMZ6.8N Diodes !Others Item Standard1 IEC1000-4-2 Charge/discharge capacitance : 200pF10% Charge/discharge capacitance : 150pF Device configuration Discharge resistance : 400 10% Discharge resistance : 330 5 repetitions No spark or smoke emitted : 25kV No element destruction No malfunction : 20kV : 8kV 10 repetitions No malfunction Contact Suspended : 8kV : 15kV Judgment contents !Electrical characteristic curves (Ta=25C) -25C 25C75C 125C 300 DYNAMIC IMPEADANCE : Zz () POWER DISSIPATION : Pd (mW) ZENER CURRENT : Iz (A) 10m 1m 100 200 100 10 1 100n 5 6 7 8 10 100 1 0.01 0.1 1 10 0 0 25 50 100 150 ZENER VOLTAGE : Vz (V) ZENER CURRENT : Iz (mA) AMBIENT TEMPERATURE : Ta (C) Fig.1 Zener voltage characteristic Fig.2 Operating resistance Zener current characteristic Fig.3 Derating curve |
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