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Transistors with built-in Resistor
UNR211x Series (UN211x Series)
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits Features
* Costs can be reduced through downsizing of the equipment and reduction of the number of parts * Mini type package allowing easy automatic insertion through tape packing and magazine packing
1
0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3
0.16+0.10 -0.06
2 (0.65)
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05
Resistance by Part Number
* UNR2110 * UNR2111 * UNR2112 * UNR2113 * UNR2114 * UNR2115 * UNR2116 * UNR2117 * UNR2118 * UNR2119 * UNR211D * UNR211E * UNR211F * UNR211H * UNR211L * UNR211M * UNR211N * UNR211T * UNR211V * UNR211Z Marking Symbol (R1) (UN2110) 6L 47 k (UN2111) 6A 10 k (UN2112) 6B 22 k (UN2113) 6C 47 k (UN2114) 6D 10 k (UN2115) 6E 10 k (UN2116) 6F 4.7 k (UN2117) 6H 22 k (UN2118) 6I 0.51 k (UN2119) 6K 1 k (UN211D) 6M 47 k (UN211E) 6N 47 k (UN211F) 6O 4.7 k (UN211H) 6P 2.2 k (UN211L) 6Q 4.7 k (UN211M) EI 2.2 k (UN211N) EW 4.7 k (UN211T) EY 22 k (UN211V) FC 2.2 k (UN211Z) FE 4.7 k (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 10 k 22 k 10 k 10 k 4.7 k 47 k 47 k 47 k 2.2 k 22 k
10 1.1+0.2 -0.1 1.1+0.3 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Internal Connection
R1 B R2 E C
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -100 200 150 -55 to +150 Unit V V mA mW C C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003 SJH00006CED
0 to 0.1
0.40.2
5
1
UNR211x Series
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR2110/2115/2116/2117 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 Min -50 -50 - 0.1 - 0.5 - 0.01 - 0.1 - 0.2 - 0.4 - 0.5 -1.0 -1.5 -2.0 hFE VCE = -10 V, IC = -5 mA 6 20 30 35 60 60 80 80 160 VCE(sat) VOH VOL IC = -10 mA, IB = - 0.3 mA IC = -10 mA, IB = -1.5 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k VCC = -5 V, VB = -10 V, RL = 1 k VCC = -5 V, VB = -6 V, RL = 1 k fT VCB = -10 V, IE = 1 mA, f = 200 MHz VCB = -10 V, IE = 2 mA, f = 200 MHz R1 -30% 80 150 0.51 1.0 2.2 4.7 10 22 47 +30% k MHz -4.9 - 0.2 V V 400 460 - 0.25 V 200 20 Typ Max Unit V V A A mA
cutoff current UNR2113 (Collector open) UNR2112/2114/211D/ 211E/211M/211N/211T UNR211Z UNR2111 UNR211F/211H UNR2119 UNR2118/211L/211V Forward current UNR211V transfer ratio UNR2118/211L UNR2119/211D/211F/211H UNR2111 UNUNR2112/211E UNR211Z UNR2113/2114/211M UNR211N/211T UNR2110*/2115*/2116*/2117* Collector-emitter saturation voltage UNR211V Output voltage high-level Output voltage low-level UNR2113 UNR211D UNR211E Transition frequency UNR2114/2119/211E 211F/211H Input resistance UNR2118 UNR2119 UNR211H/211M/211V UNR2116/211F/211L/211N/211Z UNR2111/2114/2115 UNR2112/2117/211T UNR2110/2113/211D/211E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460
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UNR211x Series
Electrical Characteristics (continued) Ta = 25C 3C
Parameter Resistance ratio UNR211M UNR211N UNR2118/2119 UNR211Z UNR2114 UNR211H UNR211T UNR211F UNR211V UNR2111/2112/2113/211L UNR211E UNR211D 0.8 1.70 3.7 0.37 0.17 0.17 0.08 Symbol R1/R2 Conditions Min Typ 0.047 0.1 0.10 0.21 0.21 0.22 0.47 0.47 1.0 1.0 2.14 4.7 1.2 2.60 5.7 0.57 0.25 0.27 0.12 Max Unit
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart PT Ta
250
Total power dissipation PT (mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (C)
Characteristics charts of UNR2110 IC VCE
Ta = 25C IB = -1.0 mA - 0.9 mA -100 - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -60 - 0.2 mA - 0.1 mA -20
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
400
hFE IC
VCE = -10 V
-120
-10
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta = 75C
-1 Ta = 75C 25C - 0.1 -25C
200
25C -25C
-40
100
0
0
-2
-4
-6
-8
-10
-12
- 0.01 -0.1
-1
-10
-100
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR211x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
- 0.1
1
0 - 0.1
-1
-10
-100
-1 - 0.4
- 0.6
- 0.8
-1.0
-1.2
-1.4
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2111 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-160 IB = -1.0 mA Ta = 25C
-100
VCE(sat) IC
IC / IB = 10
hFE IC
160 VCE = -10 V Ta = 75C
- 0.9 mA
Forward current transfer ratio hFE
Collector current IC (mA)
-120
- 0.8 mA - 0.7 mA - 0.6 mA
-10
25C 120 -25C 80
-80
- 0.5 mA - 0.4 mA - 0.3 mA
-1 Ta = 75C
25C - 0.1 -25C
-40
- 0.2 mA - 0.1 mA
40
0
0
-2
-4
-6
-8
-10
-12
- 0.01 - 0.1
-1
-10
-100
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
- 0.1
1
- 0.01 - 0.1
0 - 0.1
-1
-10
-100
-1 - 0.4
- 0.6
- 0.8
-1.0
-1.2
-1.4
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR211x Series
Characteristics charts of UNR2112 IC VCE
Ta = 25C IB = -1.0 mA - 0.9mA - 0.8mA - 0.7mA - 0.6mA - 0.5mA -80 - 0.4mA - 0.3mA -40 - 0.2mA - 0.1mA 0
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100
IC / IB = 10
hFE IC
400 VCE = -10 V
-160
Collector current IC (mA)
-120
-10
Forward current transfer ratio hFE
300
-1 25C - 0.1 -25C Ta = 75C
Ta = 75C 200 25C -25C 100
0
-2
-4
-6
-8
-10
-12
- 0.01 - 0.1
-1
-10
-100
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
- 0.1
1
0 - 0.1
-1
-10
-100
-1 - 0.4
- 0.6
- 0.8
-1.0
-1.2
-1.4
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2113 IC VCE
IB = -1.0 mA Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
hFE IC
400 VCE = -10 V
-160 - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12
Forward current transfer ratio hFE
Collector current IC (mA)
-120
-10
300
Ta = 75C
25C 200 -25C
-1 Ta = 75C
25C - 0.1 -25C
100
0
- 0.01 - 0.1
-1
-10
-100
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR211x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
- 0.1
1
0 - 0.1
-1
-10
-100
-1 - 0.4
- 0.6
- 0.8
-1.0
-1.2
-1.4
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2114 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-160 Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0
-100
VCE(sat) IC
IC / IB = 10
400
hFE IC
VCE = -10 V
Collector current IC (mA)
-120
-10
Forward current transfer ratio hFE
300 Ta = 75C 200 25C -25C 100
-1 Ta = 75C - 0.1 25C
-25C -1 -10 -100
0 -1 -10 -100 -1 000
0
-2
-4
-6
-8
-10
-12
- 0.01 - 0.1
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-1 000
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
3
-102
Input voltage VIN (V)
- 0.6 - 0.8 -1.0 -1.2 -1.4
-103
-100
-10
2
-10
-1
1
0 - 0.1
-1
-10
-100
-1 - 0.4
- 0.1 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR211x Series
Characteristics charts of UNR2115 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-160 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA - 0.2 mA -40 - 0.1 mA
-100
VCE(sat) IC
IC / IB = 10
400
hFE IC
VCE = -10 V
Collector current IC (mA)
-120
-10
Forward current transfer ratio hFE
300 Ta = 75C
-1 Ta = 75C - 0.1 25C
200
25C
-25C 100
-25C -1 -10 -100
0 -1 -10 -100 -1 000
0
0
-2
-4
-6
-8
-10
-12
- 0.01 -0.1
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
- 0.1
1
0 - 0.1
-1
-10
-100
-1 - 0.4
- 0.6
- 0.8
-1.0
-1.2
-1.4
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2116 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-160 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12
-100
VCE(sat) IC
IC / IB = 10
400
hFE IC
VCE = -10 V
Collector current IC (mA)
-120
-10
Forward current transfer ratio hFE
300 Ta = 75C
-1 Ta = 75C - 0.1 25C
200
25C
-25C 100
-25C -1 -10 -100
0 -1 -10 -100 -1 000
- 0.01 - 0.1
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR211x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
3
-102
Input voltage VIN (V)
- 0.6 - 0.8 -1.0 -1.2 -1.4
-103
-10
-1
2
-10
- 0.1
1
0 - 0.1
-1
-10
-100
-1 - 0.4
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2117 IC VCE
Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
400
hFE IC
VCE = -10 V
-120
Collector current IC (mA)
-10
Forward current transfer ratio hFE
-100
300
-80
-60 - 0.3 mA - 0.2 mA - 0.1 mA
-1 25C - 0.1 -25C
Ta = 75C
200
Ta = 75C
-40
25C 100 -25C
-20
0
0
-2
-4
-6
-8
-10
-12
- 0.01 - 0.1
-1
-10
-100
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
3
-102
Input voltage VIN (V)
- 0.6 - 0.8 -1.0 -1.2 -1.4
-103
-10
-1
2
-10
- 0.1
1
0 -0.1
-1
-10
-100
-1 - 0.4
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR211x Series
Characteristics charts of UNR2118 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
hFE IC
160 VCE = -10 V
-240
Collector current IC (mA)
-160
IB = - 1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA
-10
Forward current transfer ratio hFE
-200
120
-120 - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12
-1
Ta = 75C 80 25C -25C 40
Ta = 75C 25C
-80
- 0.1 -25C -1 -10 -100
-40
- 0.01 - 0.1
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
- 0.1
1
0 - 0.1
-1
-10
-100
-1 - 0.4
- 0.6
- 0.8
-1.0
-1.2
-1.4
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2119 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
hFE IC
160 VCE = -10 V
-240
Collector current IC (mA)
-160
IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA
-10
Forward current transfer ratio hFE
-200
120 Ta = 75C 80
-120
-1
Ta = 75C
25C -25C
-80
-40
0
- 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12
25C - 0.1 -25C -1 -10 -100
40
- 0.01 - 0.1
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR211x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = -0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
- 0.1
1
0 - 0.1
-1
-10
-100
-1 - 0.4
- 0.6
- 0.8
-1.0
-1.2
-1.4
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR211D IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
160
hFE IC
VCE = -10 V
-60
Forward current transfer ratio hFE
-50
IB = - 1.0 mA - 0.9 mA - 0.8 mA
Collector current IC (mA)
-10
120
Ta = 75C
-40 - 0.3 mA - 0.2 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.1 mA
25C 80 -25C
-30
-1 Ta = 75C - 0.1 25C
-20
40
-10
-25C -1 -10 -100
0 -1 -10 -100 -1 000
0
0
-2
-4
-6
-8
-10
-12
- 0.01 - 0.1
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
- 0.1
1
0 - 0.1
-1
-10
-100
-1 -1.5
-2.0
-2.5
-3.0
-3.5
-4.0
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR211x Series
Characteristics charts of UNR211E IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-60 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA
VCE(sat) IC
-100 IC / IB = 10
400
hFE IC
VCE = -10 V
Collector current IC (mA)
-10
Forward current transfer ratio hFE
-50
300
-40 - 0.3 mA -30 - 0.6 mA - 0.5 mA - 0.4 mA - 0.2 mA
-1 25C - 0.1 -25C
Ta = 75C
200 Ta = 75C 100 25C -25C
-20
- 0.1 mA
-10
0
0
-2
-4
-6
-8
-10
-12
- 0.01 - 0.1
-1
-10
-100
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
- 0.1
1
0 - 0.1
-1
-10
-100
-1 -1.5
-2.0
-2.5
-3.0
-3.5
-4.0
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR211F IC VCE
Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
160
hFE IC
VCE = -10 V
-240
Collector current IC (mA)
-10
Forward current transfer ratio hFE
-200
120 Ta = 75C 25C 80 -25C
-160
-120 - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -10 -12
-1 Ta = 75C 25C - 0.1 -25C -1 -10 -100
-80
40
-40
0
0
-2
-4
-6
-8
- 0.01 - 0.1
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00006CED
11
UNR211x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
- 0.1
1
0 - 0.1
-1
-10
-100
-1 - 0.4
- 0.6
- 0.8
-1.0
-1.2
-1.4
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR211H IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
240
hFE IC
VCE = -10 V
-120
-10
-80
IB = - 0.5 mA - 0.4 mA - 0.3 mA
Forward current transfer ratio hFE
-100
200
Collector current IC (mA)
160 Ta = 75C 120 25C 80
-60
-1 Ta = 75C 25C -0.1 -25C
-40 - 0.2 mA -20 - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12
-25C
40
-0.01 -1
-10
-100
-1 000
0 -0.1
-1
-10
-100
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
4
Input voltage VIN (V)
-10
3
-1
2
- 0.1
1
0 -1
-10
-100
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Output current IO (mA)
12
SJH00006CED
UNR211x Series
Characteristics charts of UNR211L IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-240 Ta = 25C
VCE(sat) IC
-100 IC / IB = 10
hFE IC
240 VCE = -10 V
Collector current IC (mA)
-10
-160 IB = -1.0 mA - 0.8 mA - 0.6 mA - 0.4 mA - 0.2 mA 0 0 -2 -4 -6 -8 -10 -12
Forward current transfer ratio hFE
-200
200
160
-120
-1
120
Ta = 75C 25C -25C
Ta = 75C 25C -25C
-80
80
- 0.1
-40
40
- 0.01 -1
-10
-100
-1 000
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
4
Input voltage VIN (V)
-10
3
-1
2
- 0.1
1
0 -1
-10
-100
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Output current IO (mA)
Characteristics charts of UNR211M IC VCE
Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10 IC / IB = 10
500
hFE IC
VCE = -10 V
-240
Forward current transfer ratio hFE
-200
Collector current IC (mA)
400
-1 Ta = 75C -0.1 25C
-160
300
-120 - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12
-80
-25C
200
Ta = 75C 25C -25C
-0.01
-40
100
-0.001 -1
-10
-100
-1 000
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00006CED
13
UNR211x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz IE = 0 Ta = 25C 8
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
Output current IO (A)
6
-102
Input voltage VIN (V)
-0.6 -0.8 -1.0 -1.2 -1.4
-103
-10
-1
4
-10
-0.1
2
0 -0.1
-1
-10
-100
-1 -0.4
-0.01 -0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR211N IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-200 Ta = 25C
-10
VCE(sat) IC
IC / IB = 10
300
hFE IC
VCE = -10 V
Collector current IC (mA)
-150
IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA
Forward current transfer ratio hFE
250 Ta = 75C 25C -25C
-1
200
-100
Ta = 75C -0.1 25C
150
100
-50
- 0.3 mA - 0.2 mA - 0.1 mA
-25C
50
0
0
-2
-4
-6
-8
-10
-12
-0.01 -1
-10
-100
-1 000
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
4
Output current IO (A)
Input voltage VIN (V)
-103
-10
3
-102
-1
2
-10
-0.1
1
0 -1
-10
-100
-1 -0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-0.01 -0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
14
SJH00006CED
UNR211x Series
Characteristics charts of UNR211T IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-200 Ta = 25C
-10
VCE(sat) IC
IC / IB = 10
hFE IC
300 VCE = -10 V
Forward current transfer ratio hFE
250 Ta = 75C 200 25C 150 -25C 100
Collector current IC (mA)
-150
IB = -1.0 mA -0.9 mA -0.8 mA -0.7 mA -0.6 mA -0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA
-1
-100
Ta = 75C 25C -25C
- 0.1
-50
50
0
0
-2
-4
-6
-8
-10
-12
- 0.01 -1
-10
-100
-1 000
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
Output current IO (A)
-102
Input voltage VIN (V)
-103
-10
-1
-10
- 0.1
-1 - 0.4
- 0.6
- 0.8
-1
-1.2
-1.4
- 0.01 - 0.1
-1
-10
-100
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR211V IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-12 Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA -6 - 0.6 mA - 0.5 mA -4 - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12
-10
VCE(sat) IC
IC / IB = 10
hFE IC
12 Ta = 75C VCE = -10 V
Forward current transfer ratio hFE
-10
10
Collector current IC (mA)
-8
-1 Ta = 75C 25C -0.1 -25C
25C 8
6
-25C
4
-2
2
0
-0.01 -1
-10
-100
-1 000
0 -1
-10
-1 00
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00006CED
15
UNR211x Series
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
Output current IO (A)
Input voltage VIN (V)
-103
-10
-102
-1
-10
-0.1
-1 -0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-0.01 -0.1
-1
-10
-100
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR211Z IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-200 Ta = 25C
-10
VCE(sat) IC
IC / IB = 10
300
hFE IC
VCE = -10 V
Collector current IC (mA)
-150 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA 0 - 0.1 mA 0 -2 -4 -6 -8 -10 -12
Forward current transfer ratio hFE
250
-1
200 25C 150
Ta = 75C
-100
Ta = 75C 25C -25C
- 0.1
100
-25C
-50
50
- 0.01 -1
-10
-100
-1 000
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
-104 VO = -5 V Ta = 25C
-100
VIN IO
VO = - 0.2 V Ta = 25C
5
Output current IO (A)
4
3
-102
Input voltage VIN (V)
-103
-10
-1
2
-10
- 0.1
1
0 -1
-10
-100
-1 - 0.4
- 0.6
- 0.8
-1
-1.2
-1.4
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
16
SJH00006CED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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