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(R)
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET
TYPE VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04
(*) For PowerSO-10 only
RDS(on)
Ilim
Vclamp
10
10 m (*)
30 A
40 V
1
3
1
D2PAK
PowerSO-10TM
n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT
3 1 2
1
3 2
TO-220
TO-247 ORDER CODES: VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04
PIN
n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE
D2PAK TO-220 PowerSO-10TM TO-247
POWER MOSFET (ANALOG DRIVING)
n COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, BLOCK DIAGRAM
intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
DRAIN
2 Overvoltage Clamp
INPUT
1
Gate Control
Over Temperature
Linear Current Limiter
3
SOURCE
FC01000
July 2003
1/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ABSOLUTE MAXIMUM RATING
Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5K, C=100pF) Electrostatic Discharge on output pin only (R=330, C=150pF) Total Dissipation at Tc=25C Operating Junction Temperature Case Operating Temperature Storage Temperature PowerSO-10TM Value D2PAK TO-220 Internally Clamped Internally Clamped +/-20 4.7 Internally Limited -30 4000 16500 125 125 125 Internally limited Internally limited -55 to 150 208 Unit TO-247 V V mA A A V V W C C C
CONNECTION DIAGRAM (TOP VIEW)
INPUT INPUT INPUT INPUT INPUT
6 7 8 9 10 11 DRAIN
5 4 3 2 1
SOURCE SOURCE N.C. SOURCE SOURCE
(*) For the pins configuration related to TO-220, TO-247, D2PAK, see outlines at page 1.
CURRENT AND VOLTAGE CONVENTIONS
ID VDS
DRAIN IIN RIN INPUT SOURCE
VIN
2/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
THERMAL DATA
Symbol Rthj-case Rthj-amb
(*) When
PowerSO-10TM Thermal Resistance Junction-case}}} MAX 1 Thermal Resistance Junction-ambient MAX 50(*)
Parameter
Value D2PAK 1 50(*)
TO-220 1 50
TO-247 0.6 30
Unit C/W C/W
mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 m thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (-40C < Tj < 150C, unless otherwise specified) OFF
Symbol VCLAMP VCLTH VINTH IISS VINCL IDSS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=15A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V A V A
ON
Max Symbol Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=15A; Tj=25C VIN=5V; ID=15A; Tj=150C PowerSO-10 10 20 D2PAK TO-220 / TO-247 13 24 Unit
RDS(on)
m
3/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ELECTRICAL CHARACTERISTICS (continued) (Tj=25C, unless otherwise specified) DYNAMIC
Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=15A VDS=13V; f=1MHz; VIN=0V Min Typ 35 1300 Max Unit S pF
SWITCHING
Symbol td(on) tr td(off) tf td(on) tr td(off) tf (di/dt)on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions VDD=15V; ID=15A Vgen=5V; Rgen=RIN MIN=4.7 (see figure 1) VDD=15V; ID=15A Vgen=5V; Rgen=2.2K (see figure 1) VDD=15V; ID=15A Vgen=5V; Rgen=RIN MIN=4.7 VDD=12V; ID=15A; VIN=5V Igen =2.13mA (see figure 5) Min Typ 150 840 980 600 4 27 34 31 18 118 Max 500 2500 3000 1500 12 100 120 110 Unit ns ns ns ns s s s s A/s nC
SOURCE DRAIN DIODE
Symbol VSD (*) trr Qrr IRRM Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions ISD=15A; VIN=0V ISD=15A; dI/dt=100A/s Min Typ 0.8 400 1.4 7 Max Unit V ns C A
VDD=30V; L=200H Reverse Recovery Current (see test circuit, figure 2)
PROTECTIONS (-40C < Tj < 150C, unless otherwise specified)
Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy Test Conditions VIN=6V; VDS=13V VIN=6V; VDS=13V Min 30 Typ 45 50 150 135 10 1.7 175 200 Max 60 Unit A s C C mA J
VIN=5V; VDS=13V; Tj=Tjsh starting Tj=25C; VDD=24V VIN=5V; Rgen=RIN MIN=4.7; L=24mH (see figures 3 & 4)
15
20
(*) Pulsed: Pulse duration = 300s, duty cycle 1.5%
4/19
2
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 25KHz. The only difference from the user's standpoint is that a small DC current IISS (typ. 100A) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltages is. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 C, a typical value being 170 C. The device is automatically restarted when the chip temperature falls of about 15C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.
5/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Fig.1: Switching Time Test Circuit for Resistive Load
VD Rgen Vgen
ID 90%
tr td(on)
10% td(off)
tf t
Vgen
t Fig.2: Test Circuit for Diode Recovery Times
A D I
A
FAST DIODE
OMNIFET
S 25 B
L=100uH B
D
Rgen
VDD
I
OMNIFET
S
Vgen
8.5
6/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Fig. 3: Unclamped Inductive Load Test Circuits Fig. 4: Unclamped Inductive Waveforms
RGEN VIN PW
Fig. 5: Input Charge Test Circuit
Fig 6 : Thermal Impedance for TO-220
VIN
GEN
ND8003
Fig. 7:Thermal Impedance for TO-247
7/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Source-Drain Diode Forward Characteristics
Vsd (mV)
950
Static Drain Source On Resistance
Rds(on) (mOhm)
50
900
Vin=2.5V
Tj=-40C
Vin=0V
850
40
Tj=25C
800
30
Tj=150C
750 20 700
650 0 5 10 15 20 25 30 35
10 0 1 2 3 4 5 6
Id (A)
Id (A)
PowerSO-10 Static Drain-Source On resistance Vs. Input Voltage
Rds(on) (mOhm)
27.5 25 22.5 20 17.5 15 12.5
Tj=25C
Id=15A Id=7.5A
D2PAK, TO-220 & TO-247 Static Drain-Source On resistance Vs. Input Voltage
Rds(on) (mOhm)
30
Id=15A Id=7.5A
25
Tj=150C
20
Tj=150C
Id=15A Id=7.5A
15
Id=15A Id=7.5A
Tj=25C
10
10 5 7.5
Tj=-40C
Tj=-40C
Id=15A Id=7.5A Id=15A Id=7.5A
5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
0 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Vin (V)
Vin (V)
PowerSO-10 Static Drain-Source On Resistance Vs. Id
Rds(on) (mOhm)
30
D2PAK, TO-220 & TO-247 Static Drain-Source On Resistance Vs. Id
Rds(on) (mOhm)
24 21
25
Vin=5V
20
Tj=150C
18 15 12
Tj=150C
15
Tj=25C
9 10
Tj=25C Tj=-40C
Tj=-40C
6
5
Vin=5V
3 0 0 5 10 15 20 25 30 35 0 4 8 12 16 20 24 28 32
0
Id (A)
Id (A)
8/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Transconductance
Gfs (S)
54
Transfer Characteristics
Idon (A)
Tj=-40C
48
50 45
Vds=13V
42 36 30
Tj=25C Tj=150C
Vds=13.5V
40 35 30
Tj=-40C
Tj=150C
25 20
24 18 15 12 6 0 0 4 8 12 16 20 24 28 32
Tj=25C
10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Id (A)
Vin (V)
Output Characteristics
Id (A)
55 50 45
Normalized On Resistance Vs. Temperature
Rds(on) (mOhm)
4 3.5
Vin=4V Vin=4.5V Vin=3.5V Vin=3V
3 2.5 2 1.5 1
Vin=5V Id=15A
40 35 30 25 20 15
Vin=2.5V
10
0.5
5 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5
0 -50 -25 0 25 50 75 100 125 150 175
Vds (V)
Tc (C)
Turn On Current Slope
di/dt (A/us)
20 17.5 15 12.5 10 7.5 5
Turn On Current Slope
di/dt (A/us)
10 9
Vin=5V Vdd=15V Id=15A
8 7 6 5 4 3 2
Vin=3.5V Vdd=15V Id=15A
2.5 0 0 150 300 450 600 750 900 1050
1 0 0 125 250 375 500 625 750 875 1000 1125
Rg (Ohm)
Rg (Ohm)
9/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Input Voltage Vs. Input Charge
Vin (V)
8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175
Turn off drain source voltage slope
dV/dt (V/us)
160 140
Vds=12V Id=15A
120 100 80 60 40 20 0 0 150
Vin=5V Vdd=15V Id=15A
300
450
600
750
900
1050
Qg (nC)
Rg (Ohm)
Turn Off Drain-Source Voltage Slope
dV/dt (V/us)
160 140 120 100 80 60 40 20 0 0 150 300 450 600 750 900 1050
Switching Time Resistive Load
T (us)
40 35
td(off) Vdd=15V Id=15A Rg=4.7ohm tf tr
Vin=3.5V Vdd=15V Id=15A
30 25 20 15 10 5 0 0
td(on)
300
600
900
1200
1500
1800
2100
2400
Rg (Ohm)
Rg (Ohm)
Switching Time Resistive Load
T (ns)
1750
Normalized Input Threshold Voltage Vs. Temperature
Vinth (V)
2
1500
tr
Vdd=15V Id=15A Rg=4.7ohm td(off)
1.75 1.5 1.25
Vds=Vin Id=1mA
1250
1000 1 750
tf
500
0.75 0.5 0.25 0
250
td(on)
0 3 3.5 4 4.5 5 5.5 6 6.5 7
-50
-25
0
25
50
75
100
125
150
175
Vin (V)
Tc (C)
10/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Current Limit Vs. Junction Temperature
Ilim (A)
100 90 80 70 60 50 40 30 20 60 10 0 -50 -25 0 25 50 75 100 125 150 175 40 0 5 10 15 20 25 30 35 100
Step Response Current Limit
Tdlim (us)
180
Vin=6V Vds=13V
160
Vin=6V
140
120
80
Tc (C)
Vdd (V)
Derating Curve
11/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
TO-220 MECHANICAL DATA
mm. DIM. MIN. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75
. # %
inch MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.7 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 14.0 2.95 15.75 6.6 3.93 0.511 0.104 0.600 0.244 0.137 0.154 0.102 3.85 0.147
'
TYP
TYP.
MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409
4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 13.0 2.65 15.25 6.2 3.5 2.6
0.551 0.116 0.620 0.260
0.151
&
/
. . . . . 8 * KC & ( 8 ( . ( *
)
)
12/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
TO-247 MECHANICAL DATA
DIM. A D E F F3 F4 G H L L3 L4 L5 M Dia. 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 mm. MIN. 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 0.144 TYP MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
13/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
PowerSO-10TM MECHANICAL DATA
DIM. A A (*) A1 B B (*) C C (*) D D1 E E2 E2 (*) E4 E4 (*) e F F (*) H H (*) h L L (*) (*)
(*) Muar only POA P013P
mm. MIN. 3.35 3.4 0.00 0.40 0.37 0.35 0.23 9.40 7.40 9.30 7.20 7.30 5.90 5.90 1.27 1.25 1.20 13.80 13.85 0.50 1.20 0.80 0 2 1.80 1.10 8 8 0.047 0.031 0 2 1.35 1.40 14.40 14.35 0.049 0.047 0.543 0.545 TYP MAX. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 MIN. 0.132 0.134 0.000 0.016 0.014 0.013 0.009 0.370 0.291 0.366 0.283 0.287 0.232 0.232
inch TYP. MAX. 0.144 0.142 0.004 0.024 0.021 0.022 0.0126 0.378 0.300 0.374 300 0.295 0.240 0.248 0.050 0.053 0.055 0.567 0.565 0.002 0.070 0.043 8 8
B
0.10 A B
10
H
E
E2
E
E4
1
SEATING PLANE e
0.25
B
DETAIL "A"
A
C D = D1 = = = SEATING PLANE
h
A F A1
A1
L DETAIL "A"
P095A
14/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
D2PAK MECHANICAL DATA
DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35
P011P6
15/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
TO-220 TUBE SHIPMENT (no suffix)
A
B
Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
All dimensions are in mm.
50 1000 532 5.5 31.4 0.75
C
16/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
PowerSO-10TM SUGGESTED PAD LAYOUT
14.6 - 14.9
B
TUBE SHIPMENT (no suffix)
CASABLANCA MUAR
C
10.8- 11 6.30
A A
C
0.67 - 0.73 1 2 3 4 5 10 9 8 7 6 1.27 0.54 - 0.6
B
9.5
All dimensions are in mm. Base Q.ty Bulk Q.ty Tube length ( 0.5) Casablanca Muar 50 50 1000 1000 532 532 A B C ( 0.1) 0.8 0.8
10.4 16.4 4.9 17.2
TAPE AND REEL SHIPMENT (suffix "13TR")
REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 600 600 330 1.5 13 20.2 24.4 60 30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 24 4 24 1.5 1.5 11.5 6.5 2
End
All dimensions are in mm.
Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components
17/19
1
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
D2PAK FOOTPRINT
A
TUBE SHIPMENT (no suffix)
C
16.90
12.20
1.60 3.50 9.75
5.08
B
Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1) All dimensions are in mm.
50 500 532 6 21.3 0.6
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix "13TR")
REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 24.4 60 30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 24 4 16 1.5 1.5 11.5 6.5 2
End
All dimensions are in mm.
Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components
18/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
19/19

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