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SOT323 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
ISSUE 1- DECEMBER 1998
1
1
ZUMD54 ZUMD54C
3 2
3
2 3
1
SINGLE ZUMD54 Partmark: D8
COMMON CATHODE ZUMD54C Partmark: D8C
FEATURES: Low VF & High Current Capability APPLICATIONS: PSU, Mobile Telecomms & SCSI ABSOLUTE MAXIMUM RATINGS.
PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ I F =10mA Repetitive Peak Forward Current Non Repetitive Forward Current Power Dissipation at T amb=25C Storage Temperature Range JunctionTemperature t<1s SYMBOL VR IF VF I FRM I FSM P tot T stg Tj VALUE 30 200 400 300 600 330 -55 to +150 125 UNIT V mA mV mA mA mW C C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 30 TYP. 50 135 200 280 350 530 1.4 7.5 240 320 400 500 1000 2 10 5 MAX. UNIT V mV mV mV mV mV CONDITIONS. I R=10A I F=0.1mA I F=1mA I F=10mA I F=30mA I F=100mA V R=25V f=1MHz,V R=1V switched from I F=10mA to I R=10mA R L=100, I R=1mA
Reverse Current Diode Capacitance Reverse Recovery Time
IR CD t rr
A
pF ns
Dual Device; For simultaneous continuous use Tj=100C.
ZUMD54 ZUMD54C
TYPICAL CHARACTERISTICS
1
Forward Current IF (A)
10m
100m
Reverse Current IR (A)
1m
+125C +85C
10m
+125C +85C +25C
100
1m
10 +25C 1 0 10 20 30
100
10 0 0.15 0.3 0.45 0.6 0.75 0.9
Forward Voltage VF (V)
Reverse Voltage VR (V)
IF v VF Characteristics
Diode Capacitance CT (pF)
15 330
IR v VR Characteristics
PD - Power Dissipation (mW)
270
10
180
5
90
0 0 10 20 30
0 0 50 100 150
Reverse Voltage VR (V)
TA - Ambient Temperature ( C)
CT v VR Characteristics
PD v TA Characteristics

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