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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 4 ZVN2110A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 100 320 6 20 700 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 250 75 25 8 7 8 13 13 1.5 4 100 0.8 2.4 20 1 100 MAX. UNIT CONDITIONS. V V nA A A A mS pF pF pF ns ns ns ns V DD 25V, I D=1A V DS=25 V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V,I D=1A V DS=25V,I D=1A (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3 ) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ZVN2110A TYPICAL CHARACTERISTICS ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) 2.0 VGS= 10V 9V 2.0 1.6 1.2 5V 0.8 4V 0.4 3V 0 2 4 6 8 10 VGS= 10V 9V 8V 7V 6V 1.6 1.2 8V 7V 6V 0.8 5V 0.4 4V 3V 0 0 20 40 60 80 100 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics ID(on) -On-State Drain Current (Amps) Saturation Characteristics VDS-Drain Source Voltage (Volts) 10 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 VDS=25V VDS=10V 8 6 4 ID= 1A 500mA 100mA 2 0 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics Transfer Characteristics RDS(on)-Drain Source Resistance () 10 2.4 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 5 ID= 1A 500mA 100mA rc ou -S ain Dr e eR eR nc ta sis n) (o DS VGS=10V ID=1 A VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) 1 1 10 100 20 40 60 80 100 120 140 160 180 VGS-Gate Source Voltage (Volts) Tj-Junction Temperature (C) On-resistance v gate-source voltage Normalised RDS(on) and VGS(th) v Temperature 3-365 ZVN2110A TYPICAL CHARACTERISTICS 500 500 gfs-Transconductance (mS) gfs-Transconductance (mS) 400 300 200 100 VDS=25V 400 300 200 100 0 0 2 4 6 8 10 VDS=25V 0 0 0.2 0.4 0.6 0.8 1.0 ID(on)- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage 16 100 VGS-Gate Source Voltage (Volts) 14 12 10 8 6 4 2 0 ID=1A VDS= 20V 50V 80V C-Capacitance (pF) 80 60 40 20 Coss Crss 0 10 20 30 40 50 Ciss 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-366 |
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