 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 6 0.12 MAX. 1500 800 10 25 45 5.0 2.2 0.25 UNIT V V A A W V A V s Ths 25 C IC = 6.0 A; IB = 1.2 A f = 64 kHz IF = 6.0 A ICsat = 6.0 A; f = 64 kHz PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 123 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 45 150 150 UNIT V V A A A A mA A W C C average over any 20 ms period Ths 25 C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W 1 Turn-off current. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 600 mA VEB = 7.5 V IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 1.0 A; VCE = 5 V IC = 6 A; VCE = 5 V IF = 6 A MIN. 7.5 800 5 - TYP. 150 13.5 50 13 7 - MAX. 1.0 2.0 5.0 1.1 10 2.2 UNIT mA mA mA V V V V V Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (64 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICM = 6.0 A; LC = 170 H; Cfb = 5.4 nF; IB(end) = 0.7 A; LB = 0.6 H; -VBB = 2 V; (-dIB/dt = 3.33 A / s) TYP. 115 MAX. UNIT pF 1.7 0.12 2.0 0.25 s s 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX TRANSISTOR IC DIODE ICsat VCC t LC IB I B end t 5 us 6.5 us 16 us IBend LB T.U.T. CFB VCL -VBB Rbe VCE t Fig.1. Switching times waveforms (64 kHz). Fig.4. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V; LC = 100 - 400 H; VCL 1500 V; LB = 3 H; CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A hFE Tj = 25 C ICsat 90 % IC 100 5V Tj = 125 C 10 % tf ts IB IBend 10 t 1V t 1 0.1 - IBM 1 IC / A 10 100 Fig.2. Switching times definitions. Fig.5. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Tj = 125 C + 150 v nominal adjust for ICsat 1.2 1.1 1.0 Lc 0.9 0.8 D.U.T. IBend LB Cfb Rbe 0.7 0.6 0.5 IC/IB= 3 4 5 0.1 1 IC / A 10 -VBB 0.4 Fig.3. Switching times test circuit. Fig.6. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB September 1997 3 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX 1.0 0.9 0.8 0.7 0.6 0.5 VCESAT / V 100 Poff / W BU2522AF IC/IB = 5 4 3 6A Tj = 25 C IC = 10 5A 0.4 0.3 0.2 0.1 0 0.1 Tj = 125 C 1 IC / A 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 2 Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB VBESAT / V Fig.10. Typical turn-off losses. Tj = 85C Poff = f (IB); parameter IC; f = 64 kHz BU2522AF 1.2 1.1 1.0 4 Tj = 25 C Tj = 125 C ts, tf / us 3.5 3 2.5 0.9 IC= 0.8 0.7 0.6 0 1 2 IB / A 3 8A 6A 5A 4A 4 2 1.5 1 5A 0.5 0 0 0.2 0.4 0.6 0.8 IC = 6A 1 1.2 1.4 1.6 1.8 IB / A 2 Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC VCESAT / V Tj = 25 C Tj = 125 C Fig.11. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 64 kHz Normalised Power Derating with heatsink compound 10 120 110 100 90 80 70 60 6A PD% 8A 1 5A IC = 4 A 0.1 0.1 1 IB / A 10 50 40 30 20 10 0 0 20 40 60 80 Ths / C 100 120 140 Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC Fig.12. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths) September 1997 4 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX 10 Zth / (K/W) IC / A 100 BU2520AF 1 0.5 0.2 0.1 0.05 0.02 tp = ICM = 0.01 30 us 0.1 ICDC 10 P D tp D= tp T 0.01 D=0 0.001 1E-06 1E-04 1E-02 t/s 100 us T t 1E+00 Fig.13. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Ptot 1 IC / A 30 BU2522AF 1 ms 0.1 20 10 ms DC 10 0.01 1 0 0 500 VCE / V 1000 1500 10 100 1000 VCE / V Fig.14. Reverse bias safe operating area. Tj Tjmax Fig.15. Forward bias safe operating area. Ths = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound. September 1997 5 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX MECHANICAL DATA Dimensions in mm Net Mass: 5.88 g 16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 3.3 5.8 max 3.0 25 0.95 max 5.45 5.45 3.3 Fig.16. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.200 |
Price & Availability of BU2522DX
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |