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PD - 5.029
CPU165MU
IGBT SIP MODULE
Features
* * * * Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
Ultra-Fast IGBT
1,2
4 5
Q1
D1 6,7
Product Summary
Output Current in a Typical 20 kHz Motor Drive 10 ARMS with T C = 90C, T J = 125C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1)
9
Q2
D2
11,12
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
IMS-1
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM VGE VISOL PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 33 17 100 100 15 100 20 2500 83 33 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf*in (0.55-0.8 N*m)
Units
V
A
V VRMS W
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink,flat,greased surface Weight of module
Typ.
-- -- 0.1 20 (0.7)
Max.
1.5 2.0 -- --
Units
C/W g (oz)
Revision 1
C-733
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CPU165MU
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A -- 0.60 -- V/C VGE = 0V, IC = 1.0mA -- 1.8 2.3 IC = 17A V GE = 15V -- 2.2 -- V IC = 33A See Fig. 2, 5 -- 1.6 -- IC = 17A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -13 -- mV/C VCE = VGE, IC = 250A 16 24 -- S VCE = 100V, I C = 27A -- -- 250 A VGE = 0V, V CE = 600V -- -- 6500 VGE = 0V, V CE = 600V, T J = 150C -- 1.3 1.7 V IC = 25A See Fig. 13 -- 1.2 1.5 IC = 25A, T J = 150C -- -- 500 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 108 17 52 23 28 100 45 0.76 0.26 1.0 24 27 180 130 3.7 2900 330 41 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 140 IC = 27A 21 nC VCC = 400V 70 See Fig. 8 -- TJ = 25C -- ns IC = 27A, V CC = 480V 200 VGE = 15V, R G = 5.0 140 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 2.0 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 27A, V CC = 480V -- VGE = 15V, R G = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 75 ns TJ = 25C See Fig. 160 TJ = 125C 14 I F = 25A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 V R = 200V 375 nC TJ = 25C See Fig. 1200 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
C-734
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CPU165MU
24 7.4
16
5.0
Total O utpu t P ow e r (kW )
20
Lo ad C urrent (A )
S
8
2.5
TC = 90C TJ = 125C Power Factor = 0.8 Modulation Depth = 0.8 VC C = 60% of Rated Voltage
0 0.1 1 10 100 0
f, F re quency (kH z)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
1000
1000
TJ = 2 5C
100
IC , Collector-to-Emitter Current (A)
I C , Collector-to-E m itter C urrent (A)
100
TJ = 150C TJ = 25C
TJ = 1 50 C
10
10
1 0.1 1
V G E = 15 V 20 s P UL S E W ID TH
10
1 5 10
VCC = 100V 5s PULSE WIDTH
15
V C E , C o llector-to-Em itter V oltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-735
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CPU165MU
60
50
VC E , Co lle ctor-to-E m itter V oltage (V )
V G E = 15 V
3.0
V G E = 15 V 80 s P UL S E W ID TH
M aximum D C Collector Current (A )
2.5
I C = 5 4A
40
30
2.0
I C = 27 A
1.5
20
10
I C = 14 A
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , C ase Tem perature (C )
TC , C ase Tem perature (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
1
T herm al Response (Z th JC )
D = 0 .5 0
0.2 0
0.1
0.1 0 0 .05 SIN G LE P UL SE (TH ER MA L R E SP O NS E )
N o te s: 1 . D u ty fa c to r D = t 1 /t 2
PD M
t
1 t2
0.0 2 0.0 1
0.01 0.00001
2 . P e a k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-736
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CPU165MU
7000
6000
C , C apacitance (pF )
5000
4000
Cies
3000
VG E , G ate-to-E m itter V oltage (V )
1 00
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
V C E = 4 80 V I C = 2 7A
16
12
8
2000
Coes
4
1000
Cres
0 1 10 0 0 30 60 90 120
V C E , C ollector-to-E m itter V oltage (V )
Q g , Total G ate C harge (nC )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
2 .5 0
To ta l S w itc hing Lo sse s (m J)
Total S w itching Losses (m J)
VC C VG E TC IC
= 48 0 V = 15 V = 25 C = 2 7A
10
R G = 2 .0 V GE = 1 5V V CC = 48 0V I C = 54A
2 .2 5
I C = 27 A
1
2 .0 0
I C = 14 A
1 .7 5
1 .5 0 0 10 20 30 40 50
0.1 -60 -40 -20 0 20 40 60 80 100 120 140 16 0
R G , G ate R esistance ( )
W
TC , C ase Tem perature (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-737
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CPU165MU
6.0
Total Sw itching Losses (m J )
5.0
I C , C ollec tor-to -E m itter C u rre nt (A )
RG TC V CC VGE
= 2 .0 = 150C = 4 80 V = 15 V
1000
VG E E 20 V G= T J = 12 5C
4.0
100
S A FE O P E R A TIN G A R E A
3.0
2.0
10
1.0
0.0 0 10 20 30 40 50 60
1 1 10 100 1000
I C , C ollecto r-to-E m itter C urrent (A )
V C E , C o lle cto r-to-E m itte r V olta g e (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
TJ = 150C TJ = 125C
10
TJ = 25C
1 0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-738
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CPU165MU
140 100
120
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
100
I IRRM - (A)
I F = 50A I F = 25A
10
t rr - (ns)
80
IF = 50A I F = 25A
I F = 10A
60
IF = 10A
40
20 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
1500
10000
VR = 200V TJ = 125C TJ = 25C
1200
VR = 200V TJ = 125C TJ = 25C
900
di(rec)M/dt - (A/s)
Q RR - (nC)
IF = 50A
1000
IF = 10A
600
IF = 25A
I F = 25A
300
I F = 10A
0 100
IF = 50A
1000 100 100
di f /dt - (A/s)
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt C-739
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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CPU165MU
90% Vge +Vge Same type device as D.U.T.
Vce
Ic 80% of Vce 430F D.U.T.
10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
t1+5S Vce ic dt t1
Fig.18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic Qrr =
trr id dt tx
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 4 - IMS-1 Package (10 pins)
C-740
Section D - page D-13
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