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HGTG5N120BND, HGTP5N120BND
Data Sheet May 2003
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49306.
Features
* 21A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Thermal Impedance SPICE Model Temperature Compensating SABERTM Model www.fairchildsemi.com * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG5N120BND HGTP5N120BND PACKAGE TO-247 TO-220AB BRAND 5N120BND 5N120BND
COLLECTOR (FLANGE)
NOTE: When ordering, use the entire part number. i.e., HGTG5N120BND.
Symbol
C
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR (FLANGE) G G C
E
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG5N120BND HGTP5N120BND Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 300 260 8 15
oC oC
UNITS V A A A V V W W/oC
oC
1200 21 10 40 20 30 30A at 1200V 167 1.33 -55 to 150
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 25.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = 1200V TC = 25oC TC = 125oC TC = 150oC MIN 1200 6.0 30 VGE = 15V VGE = 20V TYP 100 2.45 3.7 6.8 10.5 53 60 22 15 160 130 450 390 MAX 250 1.5 2.7 4.2 250 65 72 25 20 180 160 600 450 UNITS V A A mA V V V nA A V nC nC ns ns ns ns J J
Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 5A, VGE = 15V
TC = 25oC TC = 150oC
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
VGE(TH) IGES SSOA VGEP QG(ON)
IC = 45A, VCE = VGE VGE = 20V TJ = 150oC, RG = 25, VGE = 15V, L = 5mH, VCE(PK) = 1200V IC = 5A, VCE = 600V IC = 5A, VCE = 600V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3)
td(ON)I trI td(OFF)I tfI EON EOFF
IGBT and Diode at TJ = 25oC, ICE = 5A, VCE = 960V, VGE = 15V, RG = 25, L = 5mH, Test Circuit (Figure 20)
(c)2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 10A IEC = 7A, dlEC/dt = 200A/s IEC = 1A, dlEC/dt = 200A/s Thermal Resistance Junction To Case RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode at TJ = 150oC, ICE = 5A, VCE = 960V, VGE = 15V, RG = 25, L = 5mH, Test Circuit (Figure 20) MIN TYP 20 15 182 175 1000 560 2.70 50 30 MAX 25 20 280 200 1300 800 3.50 65 40 0.75 1.75 UNITS ns ns ns ns J J V ns ns
oC/W oC/W
Typical Performance Curves
25 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A)
35 30 25 20 15 10 5 0
VGE = 15V 20
TJ = 150oC, RG = 25, VGE = 15V, L = 5mH
15
10
5
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
TC , CASE TEMPERATURE (oC)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
(c)2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND Typical Performance Curves
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
fMAX , OPERATING FREQUENCY (kHz)
200
100 50
TJ = 150oC, RG = 25, L = 5mH, V CE = 960V TC = 75oC, VGE = 15V TC VGE IDEAL DIODE 75oC 15V 75oC 12V
VCE = 840V, RG = 25, TJ = 125oC 35 ISC 30 25 20 tSC 15 10 30 20 60 50 40 70
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.75oC/W, SEE NOTES 2
TC VGE 110oC 15V 110oC 12V 10
6 8 4 ICE , COLLECTOR TO EMITTER CURRENT (A)
10
11
12
13
14
15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
30 25 20 TC = 25oC 15 10 5 0 TC = 150oC DUTY CYCLE <0.5%, VGE = 12V PULSE DURATION = 250s TC = -55oC
30 25 TC = -55oC 20 15 10 5 0 TC = 25oC TC = 150oC
DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250s
0 2 4 6 8 10
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3000 EOFF, TURN-OFF ENERGY LOSS (J) RG = 25, L = 5mH, VCE = 960V EON , TURN-ON ENERGY LOSS (J) 2500 TJ = 150oC, VGE = 12V, VGE = 15V 2000
900 RG = 25, L = 5mH, VCE = 960V 800 700 600 500 400 TJ = 25oC, VGE = 12V OR 15V 300 200
TJ = 150oC, VGE = 12V OR 15V
1500
1000
500 TJ = 25oC, VGE = 12V, VGE = 15V 0 2 3 4 5 6 7 8 9 ICE , COLLECTOR TO EMITTER CURRENT (A) 10
2
3
4
5
6
7
8
9
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
(c)2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
ISC, PEAK SHORT CIRCUIT CURRENT (A)
40
80
HGTG5N120BND, HGTP5N120BND Typical Performance Curves
40 RG = 25, L = 5mH, VCE = 960V tdI , TURN-ON DELAY TIME (ns) 35 35 trI , RISE TIME (ns) 30 25 20 15 10 0 2 3 4 5 6 7 8 9 10 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, TJ = 150oC, VGE = 12V
Unless Otherwise Specified (Continued)
40 RG = 25, L = 5mH, VCE = 960V
30 TJ = 25oC, TJ = 150oC, VGE = 12V 25
20 TJ = 25oC, TJ = 150oC, VGE = 15V 15 2 3 4 5 6 7 8 9 10 TJ = 25oC, TJ = 150oC, VGE = 15V
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
250 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 25, L = 5mH, VCE = 960V 225 VGE = 12V, VGE = 15V, TJ = 150oC 200 175 150 125 100
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
250
RG = 25, L = 5mH, VCE = 960V
tfI , FALL TIME (ns)
200 TJ = 150oC, VGE = 12V OR 15V 150
100 VGE = 12V, VGE = 15V, TJ = 25oC 2 3 4 5 6 7 8 9 10 50
TJ = 25oC, VGE = 12V OR 15V
2
ICE , COLLECTOR TO EMITTER CURRENT (A)
3 4 5 6 7 8 9 ICE , COLLECTOR TO EMITTER CURRENT (A)
10
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
80 70 60 50 40 30 20 10 0 7 8 9 10 12 13 11 VGE , GATE TO EMITTER VOLTAGE (V) 14 15 TC = 150oC TC = -55oC TC = 25oC DUTY CYCLE <0.5%, VCE = 20V PULSE DURATION = 250s VGE, GATE TO EMITTER VOLTAGE (V)
16 14
IG(REF) = 1mA, RL = 120, TC = 25oC VCE = 1200V
12 10 8 6 4 2 0 0 10 20 30 40 50 60 VCE = 400V VCE = 800V
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
(c)2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND Typical Performance Curves
2.0 FREQUENCY = 1MHz C, CAPACITANCE (nF) 1.5 CIES 1.0
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
DUTY CYCLE < 0.5%, TC = 110oC PULSE DURATION = 250s
8
6 VGE = 15V 4 VGE = 10V
0.5 COES CRES 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V)
2
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
ZJC , NORMALIZED THERMAL RESPONSE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100 0.5 0.2 0.1 10-1 0.05 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD x ZJC x RJC) + TC 10-3 10-2 10-1 PD t2 100 t1
0.01 10-2 -5 10
SINGLE PULSE 10-4
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100 IF, FORWARD CURRENT (A)
60 TC = 25oC, dlEC / dt = 200A/s 50 t, RECOVERY TIME (ns) 40 30 ta 20 10 0 tb trr
150oC 10 25oC
-55oC 1 0 1 2 3 4 5 6 7 8
1
2
VF, FORWARD VOLTAGE (V)
3 4 5 IF, FORWARD CURRENT (A)
6
7
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
(c)2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND Test Circuit and Waveforms
HGTG5N120BND
90% VGE L = 2mH VCE RG = 25 90% + VDD = 960V ICE 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0).
(c)2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
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LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2

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