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| N-CHANNEL 100V - 0.055 - 22A PowerFLATTM LOW GATE CHARGE STripFETTM II MOSFET TYPE STL22NF10 s s s s s STL22NF10 VDSS 100 V RDS(on) <0.060 ID 22 A(1) TYPICAL RDS(on) = 0.055 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE VERY LOW GATE CHARGE PowerFLATTM(5x5) DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "STripFETTM" technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLATTM package allows a significant reduction in board space without compromising performance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY ISOLATED DC-DC CONVERTERS s TELECOM AND AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot(2) Ptot(1) dv/dt (5) EAS (6) Tstg Tj February 2003 . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C (Steady State) Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C (Steady State) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 20 5.3 3.8 22 4 70 0.03 16 82 -55 to 150 Unit V V V A A A W W W/C V/ns mJ C 1/8 STL22NF10 THERMAL DATA Rthj-F Rthj-pcb(4) (*)Thermal Resistance Junction-Foot (Drain) Thermal Operating Junction-pcb 1.8 31.5 C/W C/W (*) Mounted on FR-4 board (t [ 10 sec.) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V Min. 100 1 10 100 Typ. Max. Unit V A A nA ON (7) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 11 A Min. 2 0.055 0.060 Typ. Max. Unit V DYNAMIC Symbol gfs (7) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 20 V ID = 11 A Min. Typ. 16 885 130 56 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/8 STL22NF10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 11 A VDD = 50 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 80V ID= 22A VGS=10V Min. Typ. 20 45 30 6 10 40 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 11 A VDD = 50 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 45 10 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM VSD (7) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22 A VGS = 0 100 375 7.5 Test Conditions Min. Typ. Max. 5.3 22 1.3 Unit A A V ns nC A di/dt = 100A/s ISD =22 A VDD = 30 V Tj = 150C (see test circuit, Figure 5) (1) The value is rated according Rthj-F. (2) The value is rated according Rthj-pcb. (3) Pulse width limited by safe operating area. (4) When Mounted on FR-4 Board of 1 inch, 2 oz Cu, t<10s. (5) ISD 22A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX. (6) Starting Tj = 25 oC, ID = 11 A, VDD = 30V. (7) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. Safe Operating Area Thermal Impedance 3/8 STL22NF10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STL22NF10 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STL22NF10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STL22NF10 7/8 STL22NF10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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