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SD1730 (TH560)
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
.OPTI .30 .28 .I .EFFI .COMMON .GOLD .P
MIZED FOR SSB MHz VOLTS MD -30dB CIENCY 40% EMITTER METALLIZATION OUT = 220 W PEP WITH 12 dB GAIN
.500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING TH560
PIN CONNECTION
DESCRIPTION The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
70 35 4.0 16 320 +200 - 65 to +150
V V V A W C C
THERMAL DATA RTH(j-c)
September 7, 1994
Junction-Case Thermal Resistance
0.6
C/W
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SD1730 (TH560)
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCES BVCEO BVEBO I CEO ICES hFE DYNAMIC
Symbol
I C = 100 mA I C = 200 mA I E = 20 mA VCE = 30 V VCE = 35 V VCE = 5 V
VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IE = 0 mA IC = 7 A
70 35 4.0 -- -- 15
-- -- -- -- -- --
-- -- -- 5 5 60
V V V mA mA --
Test Conditions
Value Min . Typ. Max.
Unit
POUT PG* IMD* c* COB
f = 30 MHz POUT = 220 W PEP POUT = 220 W PEP POUT = 220 W PEP f = 1 MHz
VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V VCE = 28 V
ICQ = 750 mA ICQ = 750 mA ICQ = 750 mA ICQ = 750 mA ICQ = 750 mA
220 12 -- 40 -- --
-- -- -- -- 450 :1
-- -- -30 -- -- --
W dB dBc % pF VSWR
Load POUT = 220 W PEP Mismatch
Note: * f1
=
30.00 MHz, f2
=
30.001 MHz
TYPICAL PERFORMANCE POWER OUTPUT PEP vs POWER INPUT COLLECTOR EFFICIENCY vs POWER OUTPUT PEP
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SD1730 (TH560)
TYPICAL PERFORMANCE (cont'd)
INTERMODULATION DISTORTION vs POWER OUTPUT PEP
POWER GAIN vs POWER OUTPUT
IMPEDANCE DATA FREQ. 30 MHz Z IN () 1.15 + j 0.41 ZCL () 1.25 + j 1.92
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SD1730 (TH560)
TEST CIRCUIT
C1 : 180pF C2, C4, C6, C8, C10, C12 C14, C16 : Arco 428 C3 : 820pF C5, C13 : 680pF C7, C11 : 1.2nF C9 : 1.5nF C17, C22 : 470F, 40V C18 : 10nF C19, C21 C23 : 1nF C20, C24 : 100nF, 63V
L1 L2, L5 L3, L4 L6 L7 L8 L9 L10
: : : : : : : :
3 Turns, Diameter 10mm, 1.3mm Wire, Length 10mm Hair Pin Copper foil 40 x 5mm, 0.2mm Thick Hair Pin Copper Foil 10 x 5mm, 0.2mm Thick 5 Turns, Diameter 10mm, 1.3mm Wire, Length 15mm 3 Turns, Diameter 10mm, 1.3mm Wire, Length 25mm Choke Choke Choke
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SD1730 (TH560)
BIAS CIRCUIT
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SD1730 (TH560)
PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0174 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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