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| TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS Copyright (c) 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 6 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100C 1000 Volt Blocking Capability 120 W at 25C Case Temperature E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA SOT-93 PACKAGE (TOP VIEW) B 1 q q C 2 absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp 10 ms, duty cycle 2%. TIPL762 TIPL762A TIPL762 TIPL762A TIPL762 TIPL762A SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 10 6 12 120 -65 to +150 -65 to +150 UNIT V V V V A A W C C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER V CEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage IC = 100 mA TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = 0.5 A IC = IC = IC = IC = IC = IC = IC = IC = 2A 4A 6A 6A 2A 4A 6A 6A TC = 100C f= 1 MHz 6 105 (see Notes 3 and 4) TC = 100C (see Notes 3 and 4) (see Notes 3 and 4) 20 TC = 100C TC = 100C (see Note 2) TIPL762 TIPL762A TIPL762 TIPL762A TIPL762 TIPL762A TIPL762 TIPL762A MIN 400 450 50 50 200 200 50 50 1 60 0.5 1.0 2.5 5.0 1.1 1.3 1.5 1.4 MHz pF V V A mA A TYP MAX UNIT V VCE = 850 V ICES V CE = 1000 V V CE = 850 V V CE = 1000 V ICEO IEBO hFE VCE = 400 V V CE = 450 V VEB = VCE = IB = VCE(sat) IB = IB = IB = IB = V BE(sat) Base-emitter saturation voltage Current gain bandwidth product Output capacitance IB = IB = IB = ft Cob VCE = VCB = 10 V 5V 0.4 A 0.8 A 1.2 A 1.2 A 0.4 A 0.8 A 1.2 A 1.2 A 10 V 20 V IC = 0.5 A IE = 0 f = 0.1 MHz NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC Junction to case thermal resistance MIN TYP MAX 1.25 UNIT C/W inductive-load-switching characteristics at 25C case temperature (unless otherwise noted) PARAMETER tsv trv tfi tti txo tsv trv tfi tti txo TEST CONDITIONS MIN TYP MAX 2.5 200 UNIT s ns ns ns ns s ns ns ns ns Voltage storage time Voltage rise time Current fall time Current tail time Cross over time Voltage storage time Voltage rise time Current fall time Current tail time Cross over time IC = 6 A V BE(off) = -10 V IB(on) = 1.2 A TC = 100C (see Figures 1 and 2) IC = 6 A V BE(off) = -10 V IB(on) = 1.2 A (see Figures 1 and 2) 150 50 300 3 300 150 50 500 Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 33 +5V D45H11 BY205-400 BY205-400 33 1 pF RB (on) 180 H vcc V Gen 68 1 k 0.02 F +5V 1 k 2N2222 TUT BY205-400 Vclamp = 400 V 270 BY205-400 1 k 2N2904 5X BY205-400 Adjust pw to obtain IC 47 For IC < 6 A For IC 6 A VCC = 50 V VCC = 100 V 100 D44H11 V BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti B - E = txo IB A (90%) Base Current C 90% V CE B 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 , Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms PRODUCT INFORMATION 3 TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 5 V TC = 125C TC = 25C TC = -65C VCE(sat) - Collector-Emitter Saturation Voltage - V 100 TCP762AE COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5*0 TCP762AH hFE - Typical DC Current Gain 4*0 IC = 1 A IC = 2 A IC = 4 A IC = 6 A TC = 25C 3*0 10 2*0 1*0 1*0 0*1 0 1*0 IC - Collector Current - A 10 0 0*5 1*0 1*5 2*0 2*5 IB - Base Current - A Figure 3. Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 5*0 TCP762AI BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1*2 VBE(sat) - Base-Emitter Saturation Voltage - V TC = 25C TCP762AJ 4*0 IC = 1 A IC = 2 A IC = 4 A IC = 6 A TC = 100C 1*1 3*0 1*0 2*0 0*9 1*0 0*8 IC = 6 A IC = 4 A IC = 2 A IC = 1 A 0 0*2 0*4 0*6 0*8 1*0 1*2 1*4 1*6 1*8 2*0 0 0 0*5 1*0 1*5 2*0 2*5 IB - Base Current - A 0*7 IB - Base Current - A Figure 5. Figure 6. PRODUCT INFORMATION 4 TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE 10 TCP762AF ICES - Collector Cut-off Current - A 1*0 TIPL762A VCE = 1000 V 0*1 TIPL762 VCE = 850 V 0*01 0*001 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - C Figure 7. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAP762AB IC - Collector Current - A 10 1*0 0.1 tp = 100 s tp = 1 ms tp = 10 ms DC Operation 10 TIPL762 TIPL762A 100 1000 0*01 1*0 VCE - Collector-Emitter Voltage - V Figure 8. PRODUCT INFORMATION 5 TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION 1*0 50% 20% 0*1 10% 5% 2% TCP762AG ZJC / R JC - Normalised Transient Thermal Impedance 0*01 1% t1 0% duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = PD(peak) * 10-4 10-3 ZJC R JC t2 () 10-2 * RJC(max) 10 -1 0*001 10-5 t1 - Power Pulse Duration - s Figure 9. PRODUCT INFORMATION 6 TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 o 4,1 4,0 15,2 14,7 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW PRODUCT INFORMATION 7 TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 8 |
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