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| TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q q q Rugged Epitaxial Planar Construction 10 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100C txo typically 320 ns, IC = 10 A TO-220 PACKAGE (TOP VIEW) B C E 1 2 3 q Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp 10 ms, duty cycle 2%. TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 150 200 150 200 120 150 8 10 15 70 -65 to +150 -65 to +150 UNIT V V V V A A W C C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER V CEO(sus) VCBO Collector-emitter sustaining voltage Collector-base breakdown voltage Collector-emitter cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage IC = 100 mA IC = 1 mA VBE = 0 VBE = 0 VBE = 0 VBE = 0 1.5 < VEB <8 V IB = 0 IB = 0 IC = 0 IC = 0.5 A IC = IC = 4A 7A (see Notes 3 and 4) TC = 100C (see Notes 3 and 4) TC = 100C (see Notes 3 and 4) 60 TC = 100C TC = 100C TEST CONDITIONS L = 25 mH (see Note 2) (see Note 3) TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A MIN 120 150 150 200 0.05 0.05 1 1 50 50 50 50 4 500 1.2 1.5 2.0 2.0 1.8 1.9 2.2 2.1 3 f= 1 MHz (see Note 5) 10 90 V MHz pF V V A A mA mA TYP MAX UNIT V V VCE = 150 V ICES V CE = 200 V V CE = 150 V V CE = 200 V ICEV ICEO IEBO hFE VCE = 150 V V CE = 200 V VCE = 120 V V CE = 150 V VEB = VCE = IB = VCE(sat) IB = IB = IB = IB = V BE(sat) Base-emitter saturation voltage Parallel diode forward voltage Current gain bandwidth product Output capacitance IB = IB = IB = VEC ft Cob NOTES: 2. 3. 4. 5. IE = VCE = VCB = 5V 5V 20 mA 30 mA 50 mA 50 mA 20 mA 30 mA 50 mA 50 mA 10 A 10 V 20 V IC = 10 A IC = 10 A IC = IC = 4A 7A IC = 10 A IC = 10 A IB = 0 IC = 0.5 A IE = 0 f = 0.1 MHz Inductive loop switching measurement. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. thermal characteristics PARAMETER RJC Junction to case thermal resistance MIN TYP MAX 1.79 UNIT C/W inductive-load-switching characteristics at 25C case temperature (unless otherwise noted) PARAMETER tsi trv tfi tti txo TEST CONDITIONS MIN TYP 450 160 MAX 700 750 400 450 500 UNIT ns ns ns ns ns Current storage time Voltage rise time Current fall time Current tail time Cross over time IC = 10 A IB(off) = -2.5 A IB(on) = 50 mA V BE(off) = -5 V (see Figures 1 and 2) 250 280 320 Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 33 +5V D45H11 BY205-400 BY205-400 33 1 pF RB (on) 180 H vcc V Gen 68 1 k 0.02 F +5V 1 k 2N2222 TUT BY205-400 Vclamp = 400 V 270 BY205-400 1 k 2N2904 5X BY205-400 Adjust pw to obtain IC 47 For IC < 6 A For IC 6 A VCC = 50 V VCC = 100 V 100 D44H11 V BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti B - E = txo IB A (90%) Base Current C 90% V CE B 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 , Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms PRODUCT INFORMATION 3 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 10000 TC = 125C TC = 25C TC = -65C TCE785AA COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 6 TCE785AB VCE = 5 V hFE - Typical DC Current Gain 5 IC = 10 A IC = 7 A IC = 4 A IC = 1 A 4 1000 3 2 1 100 1*0 IC - Collector Current - A 0 10 1 10 IB - Base Current - mA 100 Figure 3. Figure 4. BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 2*0 VBE(sat) - Base-Emitter Saturation Voltage - V IC = 10 A IC = 7 A IC = 4 A IC = 1 A TCE785AC COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE 10 TCE785AD 1*8 ICES - Collector Cut-off Current - A 1*0 TIPL790A VCE = 200 V 0*1 TIPL790 VCE = 150 V 0*01 1*6 1*4 1*2 1*0 1*0 10 IB - Base Current - mA 100 0*001 -60 -30 0 30 60 90 120 TC - Case Temperature - C Figure 5. Figure 6. PRODUCT INFORMATION 4 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAE785AA IC - Collector Current - A 10 tp = 1 ms, d = 1% tp = 2 ms, d = 5% tp = 10 ms, d = 5% DC Operation 1*0 0.1 TIPL790 TIPL790A 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 7. PRODUCT INFORMATION 5 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 6 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 7 |
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