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| MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM20RA-M,-H * IT (AV) * IF (AV) * VRRM * * * * Average on-state current ............ 20A Average forward current ............ 20A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 60 47.6 2-5.5 A1 A2 A1 13 18 32 CR G1 K1 A2 SR K2 K1 G1 8.5 15 36 K2 4-M4 Tab#110, t=0.5 11 LABEL 16.5 2.0 24.5 30 Feb.1999 MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 Unit V V V V V V Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS current Average current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M4 Conditions Ratings 30 Unit A A A A2s A/s W W V V A C C V N*m kg*cm N*m kg*cm g Single-phase, half-wave 180 conduction, TC=87C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=0.5A, Tj=125C 20 400 6.7 x 102 100 5.0 0.5 10 5.0 2.0 -40~125 -40~125 2500 0.98~1.47 10~15 1.47~2.45 15~25 80 -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current Foward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125C, VRRM applied Tj=125C, VDRM applied Tj=125C, ITM=IFM=60A, instantaneous meas. Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, RL=2 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -- 500 -- 0.25 10 -- -- 10 Typ. -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 1.8 -- 3.0 -- 50 1.0 0.25 -- Unit mA mA V V/s V V mA C/ W C/ W M Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item Thyristor Diode -- -- -- -- VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt Item Thyristor Diode PGM PG (AV) VFGM IFGM Tj Tstg -- -- -- -- ELECTRICAL CHARACTERISTICS Item Thyristor Diode -- -- -- -- -- IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 CURRENT (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.5 500 Tj=125C SURGE (NON-REPETITIVE) CURRENT (A) 400 RATED SURGE (NON-REPETITIVE) CURRENT 300 200 100 1.5 2.5 3.5 4.5 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 10 1 GATE VOLTAGE (V) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 1.0 TRANSIENT THERMAL IMPEDANCE (C/W) VFGM=10V PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 0 IGT= 10 50mA 7 5 Tj= 25C 3 2 VGD=0.25V 10 -1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 IFGM=2.0A GATE CURRENT (mA) 0.8 0.6 0.4 0.2 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE 40 AVERAGE POWER DISSIPATION (W) 35 30 25 20 15 10 5 0 0 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 180 120 LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 130 120 CASE TEMPERATURE (C) 110 100 90 80 70 60 50 0 5 10 15 20 =30 60 90 120 180 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 90 =30 60 360 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 5 10 15 20 AVERAGE CURRENT (A) AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 40 AVERAGE POWER DISSIPATION (W) 35 30 25 20 15 10 5 0 0 5 10 15 20 25 30 35 40 =30 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 130 120 CASE TEMPERATURE (C) 110 100 90 80 70 60 50 0 5 10 15 20 25 30 35 40 =30 60 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 270 180 120 90 60 DC 90 180 120 270 DC AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 80 AVERAGE POWER DISSIPATION (W) 70 60 50 40 30 20 10 0 0 10 20 30 40 50 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE AVERAGE CURRENT (A) LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 125 CASE TEMPERATURE (C) 120 115 110 105 100 95 90 85 80 0 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE =180 90 60 30 =30 60,90 180 10 20 30 40 50 RMS CURRENT (A) RMS CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 80 70 POWER DISSIPATION (W) (PER SINGLE MODULE) 60 60 50 40 30 20 10 0 0 5 10 15 20 25 360 RESISTIVE, INDUCTIVE LOAD LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 120 CASE TEMPERATURE (C) (PER SINGLE MODULE) 110 100 90 80 70 60 360 RESISTIVE, INDUCTIVE LOAD 180 120 90 =30 =30 60 90 120 180 30 35 40 50 0 5 10 15 20 25 30 35 40 DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) 80 70 POWER DISSIPATION (W) (PER SINGLE MODULE) 60 50 40 30 20 10 0 0 10 20 30 40 =30 90 60 CASE TEMPERATURE (C) (PER SINGLE MODULE) 120 DC OUTPUT CURRENT (A) (PER TWO MODULES) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 130 120 110 100 90 80 70 60 80 50 0 10 20 30 40 50 60 70 80 =30 60 90 120 360 RESISTIVE, INDUCTIVE LOAD 360 RESISTIVE, INDUCTIVE LOAD 50 60 70 DC OUTPUT CURRENT (A) (PER THREE MODULES) DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999 |
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