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TN2124
TN2124 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 240V RDS(ON) (max) 15 VGS(th) (max) 2.0V Order Number / Package TO-243AA** TN2124N8 TO-236AB* TN2124K1 Product marking for SOT-23: N1C where = 2-week alpha date code
* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. ** Prodcut supplied on 2000 piece carrier tape reels.
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
D
Package Options
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
08/30/99
G
Gate BVDSS BVDGS 20V
Source
D S
TO-236AB (SOT-23) top view
TO-243AA (SOT-89)
-55C to +150C 300C
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and other Supertex products, refer to the Supertex 1998 Databook.
1
TN2124
Thermal Characteristics
Package TO-236AB TO-243AA
ID (continuous)* 134mA 230mA
ID (pulsed) 250mA 1.1A
Power Dissipation @ TA = 25C 0.36W 1.6W
C/W
200 15
jc
C/W
350 78
ja
IDR* 134mA 230mA
IDRM 250mA 1.1A
* ID (continuous) is limited by max rated Tj.
Mounted on FR5 board. 25mmx25mmx1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25C unless otherwise specified)
Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current 0.1 Min 240 0.8 2.0 -5.5 100 1 100 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr
Notes: 1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested.
Typ
Max
Unit V V mV/C nA A A mA
Conditions ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA ID = 1mA, VGS = VDS VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 4.5V, VDS = 25V VGS = 3V, ID = 25mA VGS = 4.5V, ID = 120mA ID = 120mA, VGS = 4.5V VDS = 25V, ID = 120mA VGS = 0V, VDS = 25V, f = 1MHz
ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time
140 30 15 0.7 100 170 38 9 3 4 2 7 9 50 15 5 7 5 10 12 1.8 400 1.0
%/C m
pF
ns
V ns
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
VDD = 25V ID = 140mA RGEN = 25 ISD = 120mA, VGS = 0V ISD = 120mA, VGS = 0V
VDD
RL OUTPUT
D.U.T.
TN2124
Typical Performance Curves
Output Characteristics
2.0 1.0
Saturation Characteristics
1.6
0.8 VGS = 10V
8V
6V 4V 3V
ID (amperes)
8V 6V 0.8 4V
ID (amperes)
1.2
VGS = 10V
0.6
0.4
3V 0.4 2V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 0.2 2V
VDS (volts) Transconductance vs. Drain Current
1.0 VDS= 25V SOT-89 0.8 1.6 2.0
VDS (volts) Power Dissipation vs. Temperature
GFS (siemens)
0.4
-55C
PD (watts)
0.6
1.2
0.8
0.2 TA= 125C 0 0 0.2 0.4 0.6 0.8 1.0 25C
0.4
SOT-23
0.0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
10 TA= 25C 1.0
TA ( C) Thermal Response Characteristics
Thermal Resistance (normalized)
0.8 SOT-23 T A = 25C P D = 0.36W
SOT-89 (pulsed)
ID (amperes)
1.0 SOT-23 (pulsed) SOT-89 0.1
0.6
0.4
SOT-89 TA = 25C PD = 1.6W
0.2
SOT-23 (DC) 0.01 0 10 100 1000
0 0.001 0.01 0.1 1 10
VDS (volts)
tp (seconds)
3
TN2124
Typical Performance Curves
BVDSS Variation with Temperature
50 1.1 40
On-Resistance vs. Drain Current
VGS = 3V
BVDSS (normalized)
RDS(ON) (ohms)
30
1.0
20
VGS = 4.5V
10 0.9 0 -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1.0
Tj ( C) Transfer Characteristics
1.0 1.4 0.8
ID (amperes) VTH and RDS Variation with Temperature
2.0
RDS(ON) @ 4.5V, 120mA
1.6
125C
25C
1.2 1.2 1.0 0.8 0.8
0.6
0.4
VDS = 25V
0.2 0.6 0 0 2 4 6 8 10 -50 0
VGS(th) @ 1mA
0.4
0 50 100 150
VGS (volts) Capacitance vs. Drain-to-Source Voltage
100 10
Tj ( C) Gate Drive Dynamic Characteristics
8 75
C (picofarads)
VGS (volts)
f = 1MHz
50
6
4
CISS
25
VDS = 10V 100pF
VDS = 40V
2
CRSS
0 0 10 20
COSS
0 30 40 0
32 pF
0.2 0.4 0.6 0.8 1.0
VDS (volts)
QG (nanocoulombs)
08/30/99
4
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com
RDS(ON) (normalized)
VGS(th) (normalized)
TA = -55C
ID (amperes)

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