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| TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -350V -400V RDS(ON) (max) 15 15 VGS(th) (max) -2.0V -2.0V ID(ON) (min) -0.7A -0.7A Order Number / Package SO-8 - TP2640LG TO-92 TP2635N3 TP2640N3 Die -- TP2640ND MIL visual screening available. Features Low threshold -- -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Package Options SGD TO-92 NC NC BVDSS BVDGS 20V -55C to +150C 300C Note: See Package Outline section for dimensions. 1 2 3 4 8 7 6 5 Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 11/12/01 D D D D S G SO-8 top view Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TP2635/TP2640 Thermal Characteristics Package SO-8 TO-92 ID (continuous)* -210mA -180mA ID (pulsed) -1.25A -0.8A Power Dissipation @ TC = 25C 1.3W 1.0W jc ja IDR* -210mA -180mA IDRM -1.25A -0.8A C/W 24 125 C/W 96 170 * ID (continuous) is limited by max rated Tj. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current TP2640 TP2635 Min -400 -350 -0.8 -2.0 5.0 -100 -1 -10 -1 ID(ON) RDS(ON) ON-State Drain Current Static Drain-to-Source ON-State Resistance 0.7 12 11 11 RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 200 300 50 12 10 15 60 40 -1.8 V ns VGS = 0V, ISD = -200mA VGS = 0V, ISD = -200mA ns VDD = -25V, ID = -300mA, RGEN = 25 pF 15 15 15 0.75 %/C m V mV/C nA A A mA A VGS = VDS, ID= -1.0mA VGS = VDS, ID= -1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = -100V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = -10V, VDS = -25V VGS = -2.5V, ID = -20mA VGS = -4.5V, ID = -150mA VGS = -10V, ID = -300mA VGS = -10V, ID = -300mA VDS = -25V, ID = -300mA VGS = 0V, VDS = -25V f = 1 MHz Typ Max Unit V Conditions VGS = 0V, ID = -2.0mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 D.U.T. OUTPUT RL VDD TP2635/TP2640 Typical Performance Curves Output Characteristics -2.0 -1.0 Saturation Characteristics -8V -8V -6V -6V -0.8 VGS = -10V -1.6 VGS = -10V ID (amperes) -4V -0.8 ID (amperes) -1.2 -0.6 -4V -0.4 -3V -0.2 -0.4 -3V 0 0 -10 -20 -30 -40 -50 0 0 -2 -4 -6 -8 -10 VDS (volts) Transconductance vs. Drain Current 1.0 2.0 VDS (volts) Power Dissipation vs. Temperature 0.8 1.6 GFS (siemens) VDS = -25V SO-8 PD (watts) 0.6 1.2 TO-92 0.4 TA = -55C 0.8 0.2 0.4 25C 125C 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -10 SO-8 (pulsed) 1.0 TC ( C) Thermal Response Characteristics Thermal Resistance (normalized) -1.0 0.8 TO-92 (pulsed) SO-8 (DC) ID (amperes) 0.6 -0.1 TO-92 (DC) 0.4 -0.01 TC = 25C 0.2 TO-92 TC = 25C PD = 1.0W -0.001 -1 -10 -100 -1000 0 0.001 0.01 0.1 1.0 10 VDS (volts) tp (seconds) 3 TP2635/TP2640 Typical Curves BVDSS Variation with Temperature 30 1.1 24 On-Resistance vs. Drain Current VGS = -2.5V VGS = -4.5V BVDSS (normalized) RDS(ON) (ohms) 18 1.0 12 VGS = -10V 6 0.9 0 -50 0 50 100 150 0 -0.4 -0.8 -1.2 -1.6 -2.0 Tj ( C) Transfer Characteristics -2.0 ID (amperes) VTH and RDS Variation with Temperature 2.5 VDS = -25V -1.6 1.2 V(th) @ -1mA 2.0 1.0 1.5 0.8 1.0 0.6 ID (amperes) -1.2 TA = -55C 25C -0.8 RDS(ON)@ -10V, -0.3A 0.5 -0.4 0.4 0 0 -2 -4 -6 -8 -10 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 400 -10 Tj ( C) Gate Drive Dynamic Characteristics f = 1MHz -8 300 678pF C (picofarads) VGS (volts) CISS 200 -6 VDS = -10V -4 VDS = -40V 100 -2 COSS 263pF 0 0 -10 -20 -30 CRSS -40 0 0 1 2 3 4 5 VDS (volts) QG (nanocoulombs) 11/12/01 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) +125C |
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