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| (R) STPS6045CP/CPI/CW POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREME FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: TOP-3I Insulating voltage = 2500VRMS Capacitance = 12pF DESCRIPTION Dual center tap Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged either in SOT-93, TOP-3I or TO-247, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protectionapplications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current = 0.5 SOT-93 TO-247 TOP-3I IFSM IRRM IRSM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive Peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage 2x30 A 45 V 175 C 0.63 V A1 K A2 K A1 A2 Insulated TOP-3I STPS6045CPI A2 A1 K A1 K A2 SOT-93 STPS6045CP TO-247 STPS6045CW Value 45 60 Tc = 150C Per diode 30 60 400 1 3 - 65 to + 175 175 10000 Unit V A A Tc = 130C Per device tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square A A A C C V/s 1 dPtot thermal runaway condition for a diode on its own heatsink < dTj Rth(j-a) 1/5 June 1999 - Ed:5B STPS6045CP/CPI/CW THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter SOT-93 / TO-247 TOP-3I Rth (c) SOT-93 / TO-247 TOP-3I Per diode Total Per diode Total Coupling Value 0.95 0.55 1.8 1.1 0.15 0.4 Unit C/W When the diodes 1 and 2 are used simultaneously: TJ(diode 1) = P(diode1)x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C IF = 30 A IF = 60 A IF = 60 A 0.68 VR = VRRM 20 0.53 Min. Typ. Max. 500 80 0.63 0.84 0.78 Unit A mA V VF * Pulse test : ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.48 x IF(AV) + 0.005 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus ambient temperature (=0.5, per diode). PF(av)(W) 25 = 0.05 = 0.1 = 0.2 = 0.5 IF(av)(A) 35 30 =1 Rth(j-a)=Rth(j-c) SOT-93 TO-247 20 15 10 25 20 15 Rth(j-a)=10C/W TOP-3I T 10 5 tp T 5 IF(av) (A) 0 0 5 10 15 20 25 =tp/T =tp/T tp Tamb(C) 50 75 100 125 150 175 0 30 35 40 0 25 2/5 STPS6045CP/CPI/CW Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (SOT-93 and TO-247). Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TOP-3I). IM(A) 350 300 250 200 Tc=75C IM(A) 250 200 150 Tc=75C Tc=100C Tc=125C 150 100 IM 100 50 IM t Tc=100C Tc=125C =0.5 50 0 1E-3 t =0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 t(s) 1E-2 1E-1 1E+0 Fig. 4: Relative variation of thermal transient impedance junction to case versus pulse duration. Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 = 0.2 = 0.5 1E+5 Tj=150C 1E+4 1E+3 1E+2 T Tj=125C Tj=100C Tj=75C Tj=50C 0.2 = 0.1 Single pulse 1E+1 tp Tj=25C tp(s) 1E-3 1E-2 0.0 1E-4 =tp/T 1E+0 1E-1 1E+0 0 5 10 15 20 25 VR(V) 30 35 40 45 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). C(nF) 5.0 F=1MHz Tj=25C IFM(A) 200 100 Typical values Tj=125C Tj=25C 1.0 10 Tj=125C VR(V) 0.1 1 2 5 10 20 50 1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/5 STPS6045CP/CPI/CW PACKAGE MECHANICAL DATA SOT-93 DIMENSIONS Millimeters Inches Min. 4.70 1.90 0.50 1.10 10.80 14.70 Typ. Max. 4.90 2.10 2.50 2.00 0.78 1.30 1.75 2.10 11.10 15.20 12.20 16.20 18.0 4.15 31.00 4.10 Min. Typ. Max. 1.185 0.193 0.075 0.083 0.098 0.078 0.020 0.031 0.043 0.051 0.069 0.083 0.425 0.437 0.279 0.598 0.480 0.638 0.709 0.156 0.163 1.220 0.157 0.161 REF. A C D D1 E F F3 F4 G H L L2 L3 L5 L6 O 3.95 4.00 PACKAGE MECHANICAL DATA TOP-3I (isolated) DIMENSIONS REF. Millimeters Min. A B C D E F G H J K L P R 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20 4.60 Typ. Max. 4.6 1.55 15.60 0.7 2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40 Min. 0.173 0.057 0.565 0.020 0.106 0.622 0.815 0.594 0.213 0.134 0.161 0.047 0.181 Inches Typ. Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.222 0.144 0.164 0.055 4/5 STPS6045CP/CPI/CW PACKAGE MECHANICAL DATA TO-247 V DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5 5 V2 60 60 Dia. 3.55 3.65 0.139 0.143 V Dia. H A L5 L L2 L4 F2 F3 V2 F4 L3 F1 L1 D F(x3) G = = M E Type STPS6045CP STPS6045CPI STPS6045CW Marking STPS6045CP STPS6045CPI STPS6045CW Package SOT-93 TOP-3I TO-247 Weight 3.97 g. 4.46 g. 4.36 g. Base qty 30 30 30 Delivery mode Tube Tube Tube Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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