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| (R) TYNx40 Series 40A SCRs STANDARD MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 40 600 to 1000 35 Unit G A A K V mA A DESCRIPTION The TYNx40 series is suitable for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies, in-rush current limiting circuits, solid state relays (in back to back configuration), welding equipment, high power motor control circuits. Using clip assembly technology, they provide a superior performance in high surge current capabilites. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage F = 60 Hz tp = 20 s tp = 8.3 ms tp = 10 ms Tj = 25C Tj = 125C Tj = 125C Tj = 125C Tc = 95C Tc = 95C Tj = 25C Value 40 25 480 460 1060 50 4 1 - 40 to + 150 - 40 to + 125 5 A2S A/s A W C V Unit A A A K A G TO-220AB (TYNx40) I t dI/dt IGM PG(AV) Tstg Tj VRGM April 2002 - Ed: 4A 1/4 TYNx40 Series ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 80 A Gate open Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C tp = 380 s RL = 3.3 k Gate open Tj = 125C RL = 33 Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. Value 3.5 35 1.3 0.2 75 150 1000 1.6 0.85 10 5 4 Unit mA V V mA mA V/s V V m A mA Threshold voltage Dynamic resistance VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (DC) Junction to ambient (DC) Parameter Value 0.8 60 Unit C/W C/W PRODUCT SELECTOR Voltage Part Number 600 V TYNx40 X 800 V X 1000 V X 35 mA TO-220AB Sensitivity Package ORDERING INFORMATION TYN STANDARD SCR SERIES 6 VOLTAGE: 6: 600V 8: 800V 10: 1000V 40 (RG) PACKING MODE Blank: Bulk RG: Tube CURRENT: 40A OTHER INFORMATION Part Number TYNx40 TYNx40RG Note: x = voltage Marking TYNx40 TYNx40 Weight 2.3 g 2.3 g Base Quantity 250 50 Packing mode Bulk Tube 2/4 TYNx40 Series Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 40 35 30 25 20 15 10 5 0 0 5 10 IT(av)(A) 15 20 360 Fig. 2: Average and DC on-state current versus case temperature. IT(av)(A) 50 = 180 40 30 20 10 D.C. = 180 Tcase(C) 25 30 0 0 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25C] 2.5 K = [Zth/Rth] 1.00 Zth(j-c) 2.0 IGT 1.5 0.10 Zth(j-a) 1.0 0.5 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.0 -40 IH & IL Tj(C) -20 0 20 40 60 80 100 120 140 Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of It. ITSM(A),I 2t(A2s) 5000 Tj initial = 25 C ITSM I2t ITSM(A) 500 450 400 350 300 250 200 150 100 50 0 tp = 10ms Non repetitive Tj initial = 25 C One cycle 1000 dI/dt limitattion Repetitive Tcase = 95 C Number of cycles 1 10 100 1000 100 0.01 0.10 tp(ms) 1.00 10.00 3/4 TYNx40 Series Fig. 7: values). ITM(A) 500 On-state characteristics (maximum Tj max.: Vto = 0.85V Rd = 10m 100 Tj = Tj max. 10 Tj = 25C 1 0.0 VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS B C b2 REF. Millimeters Min. Typ. 3.75 Max. Min. Inches Typ. 0.147 Max. 0.625 L F I A l4 a1 c2 l3 l2 a2 b1 e M c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M 15.20 15.90 0.598 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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