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| BTA04 T/D/S/A BTB04 T/D/S/A SENSITIVE GATE TRIACS .VERYLOWI .LOWI .BTAFami FEATURES DESCRIPTION GT = 10mA max H = 15mA max ly : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/s Parameter BTA BTB ITSM A1 A2 G TO220AB (Plastic) Value Tc = 90C Tc = 95C tp = 8.3 ms tp = 10 ms 42 40 8 10 50 - 40 to + 150 - 40 to + 110 260 4 Unit A A I2t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/s Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 T/D/S/A C C C Symbol BTA / BTB04600 T/D/S/A 600 700 T/D/S/A 700 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 110C 400 V March 1995 1/5 BTA04 T/D/S/A / BTB04 T/D/S/A THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 4.4 3.2 3.3 2.4 C/W Unit C/W C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 s) IGM = 4A (tp = 20 s) VGM = 16V (tp = 20 s). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T IGT VD=12V (DC) RL=33 Tj=25C I-II-II I IV VGT VGD tgt IL VD=12V (DC) RL =33 Tj=25C Tj=110C Tj=25C Tj=25C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH * VTM * IDRM IRRM dV/dt * IT= 100mA gate open ITM= 5.5A tp= 380s VDRM VRRM Rated Rated up to Tj=25C Tj=25C Tj=25C Tj=110C Tj=110C MAX MAX MAX MAX TYP MIN Tj=110C TYP 10 1 10 1 MAX MAX MAX MIN TYP TYP 10 20 15 10 20 15 1.65 0.01 0.75 10 5 10 5 V/s V/s 5 5 Suffix D 5 10 1.5 0.2 2 20 40 25 20 40 25 mA V mA S 10 10 A 10 25 V V s mA mA Unit VD=VDRM R L=3.3k VD=VDRM IG = 40mA dIG/dt = 0.5A/s IG= 1.2 IGT Linear slope VD=67%VDRM gate open (dI/dt)c = 1.8A/ms (dV/dt)c * * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 BTA04 T/D/S/A / BTB04 T/D/S/A ORDERING INFORMATION Package IT(RMS) A BTA (Insulated) 4 VDRM / VRRM V 400 600 700 BTB (Uninsulated) 400 600 700 T X X X X X X Sensitivity Specification D X X X X X X S X X X X X X A X X X X X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig.4 : RMS on-state current versus case temperature. 3/5 BTA04 T/D/S/A / BTB04 T/D/S/A Fig.5 : Relative variation of thermal impedance versus pulse duration. Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of I2t. Fig.9 : On-state characteristics (maximum values). 4/5 BTA04 T/D/S/A / BTB04 T/D/S/A PACKAGE MECHANICAL DATA TO220AB Plastic REF. A G I D B J H F O P L C M = N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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