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| Datasheet File OCR Text: |
| NE W CMPTA29 Central DESCRIPTION: TM Semiconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high voltage and high gain. Marking Code is C29. SOT-23 CASE MAXIMUM RATINGS: (TA=25oC) SYMBOL VCBO VCES VEBO IC PD TJ,Tstg JA UNITS V V V mA mW oC oC/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 100 100 12 500 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25oC) SYMBOL ICES ICBO IEBO BVCES BVCBO BVEBO VCE(SAT) VCE(SAT) VBE(ON) TEST CONDITIONS VCE=80V VCB=80V VBE=10V IC=100A IC=100A IE=10A IC=10mA, IB=10A IC=100mA, IB=100mA VCE=5.0V, IC=100mA MIN MAX 500 100 100 UNITS nA nA nA V V V V V V 100 100 12 1.2 1.5 2.0 202 SYMBOL hFE hFE fT Cob TEST CONDITIONS VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz MIN 10,000 10,000 125 MAX UNITS 8.0 MHz pF All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 R1 203 |
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