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| SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL 7 495 FMMT495 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO Collector Cut-Off Currents Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE 100 100 50 10 100 10 MIN. 170 150 5 100 100 100 0.2 0.3 1.0 1.0 300 MHz pF SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg MAX. VALUE 170 150 5 1 2 200 500 -55 to +150 UNIT V V V nA nA nA V V V V UNIT V V V A A mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). CONDITIONS. IC=100A IC=10mA* IE=100A VCB=150V VCE=150V VEB=4V IC=250mA, IB=25mA* IC=500mA, IB=50mA* IC=500mA, IB=50mA* IC=500mA, VCE=10V* IC=1mA, VCE=10V IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 123 FMMT495 TYPICAL CHARACTERISTICS 0.4 +25 C 0.4 I+/I*=10 0.3 0.3 0.2 I+/I*=10 I+/I*=50 -55 C +25 C +100 C 0.2 0.1 0.1 0 1mA 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 320 V+-=10V +100 C +25 C 1.0 I+/I*=10 240 0.8 0.6 160 0.4 -55 C +25 C +100 C 80 -55 C 0.2 0 1mA 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A 10A IC-Collector Current hFE V IC IC-Collector Current VBE(sat) v IC 1.0 V+-=10V 10 0.8 1 0.6 0.1 0.4 -55 C +25 C +100 C 0.01 0.2 DC 1s 100ms 10ms 1ms 100s 0 1mA 10mA 100mA 1A 10A 0.001 0.1 1 10 100 1000 IC-Collector Current VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 124 |
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